Characterization of extreme ultraviolet masks by extreme ultraviolet scatterometry

We present rigorous simulations of EUV masks with technological imperfections like side-wall angles and corner roundings. We perform an optimization of two different geometrical parameters in order to fit the numerical results to results obtained from experimental scatterometry measurements. For the numerical simulations we use an adaptive finite element approach on irregular meshes. 1 This gives us the opportunity to model geometrical structures accurately. Moreover we comment on the use of domain decomposition techniques for EUV mask simulations. 2 Geometric mask parameters have a great influence on the diffraction pattern. We show that using accurate simulation tools it is possible to deduce the relevant geometrical parameters of EUV masks from scatterometry measurements.This work results from a collaboration between AMTC (mask fabrication), Physikalisch-Technische Bundesanstalt (scatterometry) and ZIB/JCMwave (numerical simulation).

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“…5 Experimental scatterometry measurements are compared to numerical simulations of EUV masks using the finite element method (FEM).…”

Section: Introductionmentioning

confidence: 99%

Rigorous FEM simulation of EUV masks: influence of shape and material parameters

Pomplun

Burger²,

Schmidt

et al. 2006

SPIE Proceedings

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“…Although there is a large variety of different techniques available, ranging from direct methods like criticaldimension electron microscopy (CD-SEM) [21,22] and atomic force microscopy (AFM) [23,24] to indirect methods like X-ray small-angle scattering (SAXS) and grazing in- * contact: jan.wernecke@ptb.de cidence SAXS (GISAXS) [25][26][27], critical dimension SAXS (CD-SAXS) [28][29][30], or extreme UV (EUV) scatterometry [31,32], all of them have very specific advantages and drawbacks. Moreover, only a few of them are traceable, that is, related to the International System of Units (SI system) by an unbroken chain of comparisons with known uncertainty, which is ultimately required in order to associate uncertainty values with any measured quantity.…”

Section: Introductionmentioning

confidence: 99%

Traceable GISAXS measurements for pitch determination of a 25 nm self-assembled polymer grating

et al. 2014

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The feature sizes of only a few nanometers in modern nanotechnology and next-generation microelectronics continually increase the demand for suitable nanometrology tools. Grazing incidence small-angle X-ray scattering (GISAXS) is a versatile technique to measure lateral and vertical sizes in the nm-range, but the traceability of the obtained parameters, which is a prerequisite for any metrological measurement, has not been demonstrated so far. In this work, the first traceable GISAXS measurements, demonstrated with a self-assembled block copolymer grating structure with a nominal pitch of 25 nm, are reported. The different uncertainty contributions to the obtained pitch value of 24.83(9) nm are discussed individually. The main uncertainty contribution results from the sample-detector distance and the pixel size measurement, whereas the intrinsic asymmetry of the scattering features is of minor relevance for the investigated grating structure. The uncertainty analysis provides a basis for the evaluation of the uncertainty of GISAXS data in a more general context, for example in numerical data modeling.

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“…the measurement of diffracted radiation from periodic structures like lines on a photomask, in order to determine line profile parameters from the diffracted intensities [88,89]. The measured intensities may be simulated by applying rigorous Finite-Element-Methods (FEM) [90], as shown in Fig.…”

Section: Optics Development For Microlithographymentioning

confidence: 99%

A quarter‐century of metrology using synchrotron radiation by PTB in Berlin

Beckhoff¹,

Gottwald²,

Klein³

et al. 2009

Physica Status Solidi (b)

131

114

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For more than 25 years, the Physikalisch‐Technische Bundesanstalt has been strongly engaged in the field of metrology using synchrotron radiation. In Berlin, this research programme started together with the user operation of the electron storage ring BESSY I in the early 1980s. At the beginning, the work was focused on fundamental radiometry, i.e. using the storage ring as a primary radiation source standard and operating beamlines for source and detector calibration in the vacuum ultraviolet spectral range. Meanwhile, at the electron storage rings BESSY II and Metrology Light Source in Berlin‐Adlershof, the activities have been extended to a broad range of fundamental and applied photon metrology in the range from the far infrared to hard X‐rays, including methods like cryogenic radiometry, reflectometry and X‐ray fluorescence spectroscopy. In the present review, we give a short historical introduction to this work, describe our laboratories and the basic radiometric principles, and present examples of recent applications, largely performed within the framework of scientific cooperations with external partners from industry and research. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Characterization of extreme ultraviolet masks by extreme ultraviolet scatterometry

Abstract: Articles you may be interested inPhase defect characterization on an extreme-ultraviolet blank mask using microcoherent extreme-ultraviolet scatterometry microscope

Cited by 19 publications

References 9 publications

Rigorous FEM simulation of EUV masks: influence of shape and material parameters

Rigorous FEM simulation of EUV masks: influence of shape and material parameters

Traceable GISAXS measurements for pitch determination of a 25 nm self-assembled polymer grating

A quarter‐century of metrology using synchrotron radiation by PTB in Berlin

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