Characterization of Gallium Indium Phosphide and Progress of Aluminum Gallium Indium Phosphide System Quantum-Well Laser Diode

Abstract

Highly ordered gallium indium phosphide layers with the low bandgap have been successfully grown on the (100) GaAs substrates, the misorientation toward [01−1] direction, using the low-pressure metal organic chemical vapor deposition method. It is found that the optical properties of the layers are same as those of the disordered ones, essentially different from the ordered ones having two orientations towards [1−11] and [11−1] directions grown on (100) gallium arsenide substrates, which were previously reported. The bandgap at 300 K is 1.791 eV. The value is the smallest ever reported, to our knowledge. The high performance transverse stabilized AlGaInP laser diodes with strain compensated quantum well structure, which is developed in 1992, have been successfully obtained by controlling the misorientation angle and directions of GaAs substrates. The structure is applied to quantum dots laser diodes. This paper also describes the development history of the quantum well and the quantum dots laser diodes, and their future prospects.

Room-temperature yellow-orange (In,Ga,Al)P–GaP laser diodes grown on (n11) GaAs substrates

“…We note that while the bandgap feature shifts in the range 100-295 K by ~70 meV (Fig. 7(b)) in agreement with the trend for the bandgap photoluminescence of (In,Ga)P layers on GaAs [23,36], the spectral shift of the stimulated emission and lasing is much stronger and the Stokes shift becomes more pronounced upon temperature increase. We tentatively attribute the effect to the multiparticle effects and contribution of phonons, which becomes stronger once the temperature increases and the exciton transport between QDs becomes significant.…”

“…Using a single compressively strained GaInP QW [22] resulted in lasing in the pulsed mode at 614 nm in broad area devices. In the recent review [23] it was emphasized that 615 nm is in the shortest wavelength-range at which room-temperature lasing was reported for (In,Ga,Al)P-GaAs edge-emitting lasers. Same wavelength limitation was reported for vertical-cavity surfaceemitting lasers [24].…”

Инжекционные лазеры InGaAlP/GaAs оранжевого оптического диапазона (~600 нм)

“…Максимальная рабочая температура в импульсном режиме составила 160 K. Информация об ориентации подложки, составах и толщинах слоев, длине резонатора, покрытии торцевых граней не приведена. Лазерная генерация при комнатной температуре вблизи 615 нм была реализована с использованием квантовых ям (КЯ) AlGaInP в качестве активной среды [16][17][18][19]. Такая же длина волны была получена и в лазерах с вертикальным резонатором [20].…”