Characterization of GaN HEMT at Cryogenic Temperatures

Kushwaha, Pragya; Sinha, Santanu; Karmakar, Chiranjit; Sahu, Manish; Kaneriya, R.K.; Kumar, Pankaj; Bhattacharya, Amartya Kumar

doi:10.1109/imarc49196.2021.9714643

Cited by 2 publications

(2 citation statements)

References 10 publications

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“…The on-resistance, Ron, decreased from 1.86 Ω.mm at RT to 1.19 Ω.mm at CT. Only a minor shift was observed in the pinch-off voltage, which was around -1.6 V. Also, no significant increase in the maximum current density was observed at CT, even when forward biasing the gate. This behavior differs from the one reported in [8] [16], but could be ascribed to trapping effects becoming more dominant at CT and either located in the AlGaN barrier or surface-related; in line with the results of the cryogenic GaN-HEMTs in [17] and [18]. This is in addition to the potential effects of the buffer traps due to its Fe-doping [19] [20], combined with the slow-down of the emission time of traps at cryogenic temperatures [18] [21].…”

Section: A DC Characterizationsupporting

confidence: 77%

Noise Characterization and Modeling of GaN-HEMTs at Cryogenic Temperatures

Mebarki

Castillo

Meledin

et al. 2023

IEEE Trans. Microwave Theory Techn.

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We report on the noise characterization and modeling of AlGaN/GaN HEMTs at a cryogenic temperature of ~10 K within the frequency range of 4.5 to 6.5 GHz. This work is the first model in the literature describing the high frequency noise behaviour of GaN-based HEMTs at cryogenic temperatures using a two-parameter-noise concept. The suggested model, which is based on measured noise figures and scattering parameters, provides the frequency and the bias-dependence of the cryogenic noise properties of AlGaN/GaN HEMTs. The noise contributions from the intrinsic device, the parasitic network and the gate leakage are separately extracted. The contribution of the access network is found of the order of 1 K and increases with the frequency, while the gate leakage has an impact of the order of 0.1 K and increases at low frequency. The model provides a basis for the future design and implementation of GaN-based cryogenic low noise amplifiers.

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Section: A DC Characterizationsupporting

confidence: 77%

Noise Characterization and Modeling of GaN-HEMTs at Cryogenic Temperatures

Mebarki

Castillo

Meledin

et al. 2023

IEEE Trans. Microwave Theory Techn.

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show abstract

“…It will bring higher power density, higher efficiency and superior performances due to higher operation speed, lower power dissipation stemming from reduced voltage, better switching characteristics, shorter transmission times due to lower metal resistance, increased integration density, better digital and analog device/circuit performances [1][2]. In this context, GaN HEMT technology has emerged as a promising candidate in cryogenic power electronics for high frequency and high power microwave applications due their high two dimensional electron gas (2DEG) mobility when operated at very low temperatures [3][4][5][6][7][8][9]. However, although several studies have already been reported about the cryogenic performances of GaN HEMT devices [10][11][12][13], there is still a lack of detailed analysis of the electronic properties of the channel and access regions under cryogenic operation.…”

Section: Introductionmentioning

confidence: 99%