Characterization of GaN layers grown on silicon-on-insulator substrates

Tripathy, S.; Wang, L.S.; Chua, Soo-Jin

doi:10.1016/j.apsusc.2006.05.090

Cited by 10 publications

(6 citation statements)

References 14 publications

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“…In this study, we will introduce other sensing membranes, the metal nitrides. Many researchers have discussed nitride thin films, which include titanium nitride (TiN) [ 12 – 16 ], hafnium nitride (HfN) [ 14 ], aluminum nitride (AlN) [ 17 – 21 ], indium nitride (InN) [ 22 ], chromium nitride (CrN) [ 23 ], zirconium nitride (ZrN) [ 24 ], gallium nitride (GaN) [ 25 ], ruthenium nitride (RuN) [ 26 , 27 ] and silicon nitride (Si 3 N 4 ) [ 28 , 29 ], etc. There are many literature reports [ 5 , 10 , 19 , 26 , 30 – 35 ] which discuss the temperature and light nonideal characteristics of ISFETs.…”

Section: Introductionmentioning

confidence: 99%

Fabrication and Characterization of a Ruthenium Nitride Membrane for Electrochemical pH Sensors

Liao

Chou

2009

Sensors

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The pH sensing and nonideal characteristics of a ruthenium nitride (RuN) sensing membrane pH sensor were investigated. RuN thin films were deposited from a 99.9% ruthenium target on p-type silicon substrates using radio frequency (r.f.) sputtering with N2 gas. Subsequently, the nanometric structure and surface morphology of RuN thin films were determined. The sensitivity of the RuN sensing membrane pH sensor was 58.03 mV/pH, obtained from ID-VG curves with a current-voltage (I–V) measurement system in standard buffer solutions from pH 1 to pH 13 at room temperature (25 °C). Moreover, the nonideal characteristics of the RuN sensing membrane, such as temperature coefficient, drift with light influence, drift rate and hysteresis width, etc. were also investigated. Finally, the sensing characteristics of the RuN membrane were compared with titanium nitride (TiN), aluminum nitride (AlN) and silicon nitride (Si3N4) membranes.

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Section: Introductionmentioning

confidence: 99%

Fabrication and Characterization of a Ruthenium Nitride Membrane for Electrochemical pH Sensors

Liao

Chou

2009

Sensors

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“…RT PL emission with an FWHM of 6 nm and an electron mobility of 380 cm 2 /V s has been obtained by the rf-plasma-assisted MBE method [15]. In contrast to polycrystalline GaN films consisting of singlecrystalline GaN nanolines with blueshift in the optical band gap relative to bulk GaN [19], we can see a redshift of PL peaks compared to a strain-free 400 mm-thick freestanding GaN [20].…”

Section: Article In Pressmentioning

confidence: 95%

Preparation of GaN films on glass substrates by middle frequency magnetron sputtering

Zou

Wang

Yin

et al. 2009

Journal of Crystal Growth

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“…Furthermore, in high frequency applications, the insulating BOX layer could reduce the losses and crosstalk caused by the conducting Si substrate [12]. However, the use of a SOI substrate can increase the thermal stresses during epitaxy and lead to cracks in the GaN layer or, in extreme cases, cracks in the SOI device Si layer [11,13]. These challenges become more prominent when the substrate size is scaled up.…”

Section: Introductionmentioning

confidence: 99%

MOVPE growth of GaN on 6-inch SOI-substrates: effect of substrate parameters on layer quality and strain

Lemettinen

Kauppinen

Rudziński

et al. 2017

Semicond. Sci. Technol.

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We demonstrate that higher crystalline quality, lower strain and improved electrical characteristics can be achieved in gallium nitride (GaN) epitaxy by using a silicon-on-insulator (SOI) substrate compared to a bulk silicon (Si) substrate. GaN layers were grown by metalorganic vapor phase epitaxy on 6-inch bulk Si and SOI wafers using the standard step graded AlGaN and AlN approach. The GaN layers grown on SOI exhibited lower strain according to x-ray diffraction analysis. Defect selective etching measurements suggested that the use of SOI substrate for GaN epitaxy reduces the dislocation density approximately by a factor of two. Furthermore, growth on SOI substrate allows one to use a significantly thinner AlGaN buffer compared to bulk Si. Synchrotron radiation x-ray topography analysis confirmed that the stress relief mechanism in GaN on SOI epitaxy is the formation of a dislocation network to the SOI device Si layer. In addition, the buried oxide layer significantly improves the vertical leakage characteristics as the onset of the breakdown is delayed by approximately 400V. These results show that the GaN on the SOI platform is promising for power electronics applications.

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Characterization of GaN layers grown on silicon-on-insulator substrates

Cited by 10 publications

References 14 publications

Fabrication and Characterization of a Ruthenium Nitride Membrane for Electrochemical pH Sensors

Fabrication and Characterization of a Ruthenium Nitride Membrane for Electrochemical pH Sensors

Preparation of GaN films on glass substrates by middle frequency magnetron sputtering

MOVPE growth of GaN on 6-inch SOI-substrates: effect of substrate parameters on layer quality and strain

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