Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors

Vincent, Benjamin; Shimura, Yosuke; Takeuchi, Shinichi; Nishimura, Tsuyoshi; Eneman, G.; Firrincieli, Andrea; Demeulemeester, Jelle; Vantomme, André; Clarysse, Trudo; Nakatsuka, Osamu; Zaima, Shigeaki; Dekoster, J; Caymax, Matty; Loo, Roger

doi:10.1016/j.mee.2010.10.025

Cited by 128 publications

(86 citation statements)

References 9 publications

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“…5,6 Integration with Si technology would substantially expand the range of possible applications, and in this context the development of viable Chemical Vapor Deposition (CVD) routes to Ge 1Ày Sn y films grown directly on Si substrates 7 represents an important milestone.…”

Section: Introductionmentioning

confidence: 99%

Ge1-ySny (y = 0.01-0.10) alloys on Ge-buffered Si: Synthesis, microstructure, and optical properties

Senaratne

Gallagher

Jiang

et al. 2014

Journal of Applied Physics

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Novel hydride chemistries are employed to deposit light-emitting Ge1-ySny alloys with y ≤ 0.1 by Ultra-High Vacuum Chemical Vapor Deposition (UHV-CVD) on Ge-buffered Si wafers. The properties of the resultant materials are systematically compared with similar alloys grown directly on Si wafers. The fundamental difference between the two systems is a fivefold (and higher) decrease in lattice mismatch between film and virtual substrate, allowing direct integration of bulk-like crystals with planar surfaces and relatively low dislocation densities. For y ≤ 0.06, the CVD precursors used were digermane Ge2H6 and deuterated stannane SnD4. For y ≥ 0.06, the Ge precursor was changed to trigermane Ge3H8, whose higher reactivity enabled the fabrication of supersaturated samples with the target film parameters. In all cases, the Ge wafers were produced using tetragermane Ge4H10 as the Ge source. The photoluminescence intensity from Ge1−ySny/Ge films is expected to increase relative to Ge1−ySny/Si due to the less defected interface with the virtual substrate. However, while Ge1−ySny/Si films are largely relaxed, a significant amount of compressive strain may be present in the Ge1−ySny/Ge case. This compressive strain can reduce the emission intensity by increasing the separation between the direct and indirect edges. In this context, it is shown here that the proposed CVD approach to Ge1−ySny/Ge makes it possible to approach film thicknesses of about 1 μm, for which the strain is mostly relaxed and the photoluminescence intensity increases by one order of magnitude relative to Ge1−ySny/Si films. The observed strain relaxation is shown to be consistent with predictions from strain-relaxation models first developed for the Si1−xGex/Si system. The defect structure and atomic distributions in the films are studied in detail using advanced electron-microscopy techniques, including aberration corrected STEM imaging and EELS mapping of the average diamond–cubic lattice.

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Section: Introductionmentioning

confidence: 99%

Ge1-ySny (y = 0.01-0.10) alloys on Ge-buffered Si: Synthesis, microstructure, and optical properties

Senaratne

Gallagher

Jiang

et al. 2014

Journal of Applied Physics

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“…Another advantage of GeSn is the use as stressor or as strained material, resulting from the lattice mismatch with Ge or Si. It is therefore a good candidate as compressive source and drain stressor in p-type Ge-channel metal oxide semiconductor field effect transistors (pMOSFETs) [4][5][6][7] or as channel material [8,9] within a postscaling approach [10]. Being a group-IV material is also an asset for the integration into current Si-based technologies, although the successful incorporation of other alloys such as III-V compounds on Si has already been demonstrated [11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Electrical characterization of p-GeSn/n-Ge diodes with interface traps under dc and ac regimes

Baert

Gupta

Gencarelli

et al. 2015

Solid-State Electronics

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In this work, the electrical properties of p-GeSn/n-Ge diodes are investigated in order to assess the impact of defects at the interface between Ge and GeSn using temperature-dependent current-voltage and capacitance-voltage measurements. These structures are made from GeSn epitaxial layers grown by CVD on Ge with in-situ doping by Boron. As results, an average ideality factor of 1.2 has been determined and an activation energy comprised between 0.28 eV and 0.30 eV has been extracted from the temperature dependence of the reverse-bias current. Based on the comparison with numerical results obtained from device simulations, we explain this activation energy by the presence of traps located near the GeSn/Ge interface.

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“…Semiconductor Ge 1−x Sn x alloy is a material compatible with silicon technology with appealing characteristics such as high hole [1,2] and electron mobility [3]. This is attractive for realizing metal oxide semiconductor field effect transistors (MOSFET) for future technological nodes in microelectronics.…”

Section: Introductionmentioning

confidence: 99%

Development of nanotopography during SIMS characterization of thin films of Ge1−Sn alloy

Secchi

Demenev

Colaux

et al. 2015

Applied Surface Science

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Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors

Cited by 128 publications

References 9 publications

Ge1-ySny (y = 0.01-0.10) alloys on Ge-buffered Si: Synthesis, microstructure, and optical properties

Ge1-ySny (y = 0.01-0.10) alloys on Ge-buffered Si: Synthesis, microstructure, and optical properties

Electrical characterization of p-GeSn/n-Ge diodes with interface traps under dc and ac regimes

Development of nanotopography during SIMS characterization of thin films of Ge1−Sn alloy

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