Characterization of hafnium oxide grown on silicon by atomic layer deposition: Interface structure

Deshpande, Anand; Inman, Ronald; Jursich, Gregory; Takoudis, Christos G.

doi:10.1016/j.mee.2005.12.008

Cited by 32 publications

(21 citation statements)

References 32 publications

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“…15,16 It can be concluded that the presence of sharp HfO 2 phonon bonds in the low wavenumber region ͑600 − 400 cm −1 ͒ is the result of the crystalline structure of the grown film. 9 However, the most intensive features of HfO 2 are reported in the 100-500 cm −1 region, most of which extend outside of our measurement range ͑lower than 400 cm −1 ͒. 16 Since FTIR measurement was done in air, as a result, the C-O vibration mode is detected at its expected position at around 670 cm −1 .…”

Section: Resultsmentioning

confidence: 77%

Interfacial and structural properties of sputtered HfO2 layers

Aygün

Yıldız

2009

Journal of Applied Physics

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Magnetron sputtered HfO2 layers formed on a heated Si substrate were studied by spectroscopic ellipsometer (SE), x-ray diffraction (XRD), Fourier transform infrared (FTIR), and x-ray photoelectron spectroscopy (XPS) depth profiling techniques. The results show that the formation of a SiO x suboxide layer at the HfO2 /Si interface is unavoidable. The HfO2 thickness and suboxide formation are highly affected by the growth parameters such as sputtering power, O2 /Ar gas ratio during sputtering, sputtering time, and substrate temperature. XRD spectra show that the deposited film has (111) monoclinic phase of HfO2, which is also supported by FTIR spectra. The atomic concentration and chemical environment of Si, Hf, and O have been measured as a function of depth starting from the surface of the sample by XPS technique. It shows that HfO2 layers of a few nanometers are formed at the top surface. Below this thin layer, Si-Si bonds are detected just before the Si suboxide layer, and then the Si substrate is reached during the depth profiling by XPS. It is clearly understood that the highly reactive sputtered Hf atoms consume some of the oxygen atoms from the underlying SiO2 to form HfO2, leaving Si-Si bonds behind

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Section: Resultsmentioning

confidence: 77%

Interfacial and structural properties of sputtered HfO2 layers

Aygün

Yıldız

2009

Journal of Applied Physics

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“…According to the report of Alers et al, the absorption peak located around 1105 cm −1 assigned to interstitial oxygen in the Si bulk [33]. Even though no features corresponding to HfSiO x were detected in 960-980 cm −1 for the film grown with 0.3 gas ratio, some peaks were observed for the films grown with 0.4 and 0.5 gas ratios [11,34]. The peak at 820 cm −1 is commonly attributed to Hf O Si stretching vibrations and the one lying from 934 cm −1 to 838 cm −1 corresponds for Si O − [35].…”

Section: Ftir Spectra Of Rf Sputtered Hfo 2 Filmsmentioning

confidence: 90%

“…A number of compatible methods have been developed to fabricate high-materials such as thermal oxidation [8], a variety of chemical vapor deposition techniques [9], ion beam deposition [10], atomic layer deposition [11,12], pulsed laser deposition [13], laser oxidation [14,15], remote plasma oxidation [16], dc and rf sputtering [8,17,18]. Among them, magnetron sputtering technique has attracted special attention due to its high growth rate, good control over physical properties of grown film and ability to grow in amorphous phase.…”

Section: Introductionmentioning

confidence: 99%

Impact of incorporated oxygen quantity on optical, structural and dielectric properties of reactive magnetron sputter grown high-κ HfO2/Hf/Si thin film

Cantaş¹,

Aygün²,

Turan³

2014

Applied Surface Science

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a b s t r a c tHigh-hafnium-oxide thin films have been fabricated by radio frequency (rf) reactive magnetron sputtering technique. To avoid formation of an undesired interfacial suboxide layer between Si and highfilm, prior to HfO 2 deposition, a thin Hf buffer layer was deposited on p-type (1 0 0) Si substrate at room temperature. Effect of oxygen gas quantity in the O 2 /Ar gas mixture was studied for the optical and structural properties of grown HfO 2 high-thin films. The grown thin oxide films were characterized optically using spectroscopic ellipsometer (SE) in detail. Crystal structure was studied by grazing incidence X-ray diffractometer (GIXRD) technique, while bonding structure was obtained by Fourier transform infrared spectroscopy (FTIR) analyses. In agreement with GIXRD and FTIR analyses, SE results show that any increment above ideal quantity of oxygen content in the gas mixture resulted in decrements in the refractive index and thickness of HfO 2 dielectric film, while increments in SiO 2 thickness. It is apparent from experimental results that oxygen to argon gas ratio needs to be smaller than 0.2 for a good film quality. The superior structural and optical properties for grown oxide film were obtained for O 2 /Ar gas ratio of about 0.05-0.1 combined with ∼30 W constant rf sputtering power.

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“…The formation of HfSiO-was discarded because this would have caused a shift of the Hf4f 7/2 peak to a binding energy of more than 1 eV as compared with that of HfO 2 (Renault, et al, 2003;Deshpande, et al, 2006). In contrast, the formation of HfAlO-species cannot be discarded because the corresponding Hf4f 7/2 peak has also been reported to be approximately 17.5 eV (Lee, et al, 2003).…”

Section: Al-hf Vermiculitesmentioning

confidence: 99%

Characterization of Al-Zr, Al-Hf and Al-Ce-pillared vermiculites by X-ray photoelectron spectroscopy

Campos

Moreno

Molina

2014

Rev. Acad. Colomb. Cienc. Ex. Fis. Nat.

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X-ray photoelectron spectroscopy was used to establish the relative concentration and the chemical environment of modifying species in a series of vermiculites pillared with mixed precursors of Al-Zr, Al-Hf and Al-Ce. The binding energies observed provided evidence that zirconium and hafnium are most likely found as Zr-O(H)-and/or Zr-Siand HfO 2 , displaying a larger dispersion on the vermiculite surface compared with cerium species (Ce 2 O 3 ), which are mainly found inside clay aggregates. On the one hand, the chemical analysis showed that with Al-Hf and Al-Zr solutions, the introduction of hafnium and zirconium was complete within the range of 0.5 -2 mmol g -1 of clay, but the efficiency was reduced with larger quantities. On the other hand, the introduction of cerium in the Al-Ce solutions can be considered to be complete within the range assessed.Key words: Pillared vermiculite, zirconium, hafnium, cerium, XPS. Caracterización de vermiculitas pilarizadas con Al-Zr, Al-Hf y Al-Ce por espectroscopía de fotoelectrones emitidos por rayos-X ResumenSe utilizó la espectroscopia de fotoelectrones emitidos por rayos-X para establecer la concentración relativa y el ambiente químico de las especies introducidas en una serie de vermiculitas pilarizadas con precursores mixtos de AlZr, Al-Hf y Al-Ce. Las energías de enlace observadas evidenciaron que es más probable encontrar zirconio y hafnio como Zr-O(H) -o Zr-Si-y HfO 2 , y que estos exhiben, además, una mayor dispersión en la superficie de la vermiculita en comparación con las especies de cerio (Ce 2 O 3 ), las cuales se encuentran principalmente en el interior de las láminas de arcilla. Por un lado, el análisis químico mostró que con las soluciones de Al-Hf y Al-Zr, la introducción de hafnio y de zirconio era completa dentro del rango de 0,5 a 2 mmol g -1 de arcilla, pero que la eficacia se reducía con cantidades más grandes. Por otro lado, la introducción de cerio en las soluciones de Al-Ce pudo considerarse completa dentro del rango evaluado.Palabras clave: vermiculita pilarizada, zirconio, hafnio, cerio, XPS.

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Characterization of hafnium oxide grown on silicon by atomic layer deposition: Interface structure

Cited by 32 publications

References 32 publications

Interfacial and structural properties of sputtered HfO2 layers

Interfacial and structural properties of sputtered HfO2 layers

Impact of incorporated oxygen quantity on optical, structural and dielectric properties of reactive magnetron sputter grown high-κ HfO2/Hf/Si thin film

Characterization of Al-Zr, Al-Hf and Al-Ce-pillared vermiculites by X-ray photoelectron spectroscopy

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