Characterization of HfO[sub 2]∕Al[sub 2]O[sub 3] gate dielectric nanometer-stacks grown by atomic layer deposition on Ge substrates

Abstract

We report the characteristics of HfO 2 /Al 2 O 3 gate dielectric nanometer-stacks deposited on Ge substrates at 250 °C by atomic layer deposition using Hf[N(CH 3 )(C 2 H 5 )] 4 and Al(CH 3 ) 3 as the precursors. The annealing effect on the interface and electrical properties of stack films was investigated by X-ray photoelectron spectroscopy, high-resolution transmission electron microscopy, and electrical measurements. It is demonstrated that the regrowth of GeO x during annealing is suppressed by Al 2 O 3 layer. And the annealed samples exhibit better electrical properties with reduction hysteresis, high capacitance value and improved leakage current density.

Photocatalytic activity and photocorrosion of atomic layer deposited ZnO ultrathin films for the degradation of methylene blue

“…The film thickness becomes slightly thinner from 71 ± 1.8 nm to 66 ± 2.2 nm (figure 2(d)). Similar phenomenon has been observed in ALD-derived ZnO or HfO 2 thin films due to the improved film density after annealing [22,23].…”

Interfacial and electrical characterization of HfO2/Al2O3/InAlAs structures

“…1(a), occur at 16.48 and 18.18 eV. 19) The peaks shift to higher binding energies of 16.76 and 18.41 eV in for sample I and sample II respectively. The binding energies of Hf 4f 7=2 and 4f 5=2 for HfAlO thin film are 16.76 and 18.41 eV, therefore it is obvious that a thin Hf-O-Al mixture layer is formed at the interface of samples.…”