Characterization of highly (110)- and (111)-oriented Pb(Zr,Ti)O3 films on BaPbO3 electrode using Ru conducting barrier

Liang, Chun-Sheng; Wu, Jenn‐Ming

doi:10.1063/1.1996850

Cited by 15 publications

(6 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Our qualitative predictions should thus also apply to PbTiO 3 films. We investigate three common 5,[13][14][15]18,19 growth orientations: namely, ͓001͔, ͓110͔, and ͓111͔. The films all have Pb-Oterminated surfaces and are represented by supercells that are finite along the growth direction, to be denoted as the zЈ direction, and repeated periodically along two in-plane xЈ and yЈ directions.…”

Section: Methodsmentioning

confidence: 99%

Influence of the growth direction on properties of ferroelectric ultrathin films

Ponomareva

Bellaïche

2006

Phys. Rev. B

View full text Add to dashboard Cite

A first-principles-based approach is developed and used to investigate Pb͑Zr 0.4 Ti 0.6 ͒O 3 ultrathin films having different growth directions and subject to different boundary conditions. A wide variety of dipole patterns is found, including ferroelectric phases absent in the bulk and different periodic stripe nanodomains. Moreover, a large enhancement of dielectricity is found in ultrathin films exhibiting a growth direction that differs from a possible direction of the polarization in the corresponding bulk. A set of two general and simple rules is provided to analyze and understand all these features.

show abstract

Section: Methodsmentioning

confidence: 99%

Influence of the growth direction on properties of ferroelectric ultrathin films

Ponomareva

Bellaïche

2006

Phys. Rev. B

View full text Add to dashboard Cite

show abstract

“…On the other hand, (1 0 0)-oriented PZT films are mainly associated with the 90°domain walls, the presence of a strong ferroelastic effect restrict the domain wall motion and therefore lower the value of saturation polarization and increase the coercive field [22,48]. In addition, (1 1 1)-textured PZT films are less sensitive to stresses induced during cooling after the deposition and possess more polarization with lower coercive field [49]. The spontaneous polarization, coercive field and remnant polarization values for sample P 2 , P 3 and P 4 are summarized in Table 2.…”

Section: Resultsmentioning

confidence: 99%

Influence of buffer layer on structural, electrical and mechanical properties of PZT/NiTi thin film heterostructures

Choudhary

Kaur

2012

Journal of Alloys and Compounds

View full text Add to dashboard Cite

“…The polarization values of 10 years retention are 43.7, 26.4 and 6.2 μC/cm 2 , for BFO (5), BFO (10) and BFO (15), respectively. The residual values of BFO (5) and BFO (10) are more large than most ferroelectric material; 26,27 and is an attractive structure for application.…”

Section: Resultsmentioning

confidence: 99%

“…The residual values of BFO(5) and BFO(10) are more large than most ferroelectric material; 26,27 and is an attractive structure for application.…”

Section: G235mentioning

confidence: 99%

Enhanced Characterizations of rf-Magnetron Sputtered BiFeO3 Thin Film Using (Ba0.5, Sr0.5)TiO3 Buffered Layer

Lee

Wang

Chen

et al. 2011

J. Electrochem. Soc.

Self Cite

View full text Add to dashboard Cite

BiFeO 3 (BFO) and (Ba 0.5 , S r0.5 )TiO 3 (BST)-buffered BFO capacitors were deposited on Pt/Ti/SiO 2 /Si(100) substrates. The effect of the thickness of the BST buffer layer, which varied from 5 to 15 nm, and the structures and electrical properties were investigated. The structures, morphologies, and leakage currents are enhanced by the insertion of a BST buffer layer. As BST film thickness increases, the remnant polarizations (Pr) decreases and the polarization-electrical field (P-E) hysteresis curve changes. Retention properties were obtained only on BST-buffered BFO. In terms of retention behaviors, we found a more stretched exponential law dominated region during retention times with increasing BST film thickness. Attractive retention values of BST-buffered BFO are also shown.Ferroelectric thin films have attracted much attention due to their potential applications. One such application, ferroelectric random access memory (FeRAM), has many potentially attractive features such as non-volatility, low electric consumption, and high speed. 1 Recently, bismuth ferrite (BFO) has been one of the most interesting ferroelectric materials under investigation use in FeRAM. 2-4 BFO possesses a large polarization value and a low crystallization temperature, 5 both of which are desirable properties for high density FeRAMs. However, BFO has a high leakage current, which affects electric measurements of BFO films, such as polarization-electrical field (P-E) hysteresis, fatigue, and retention properties. Many studies have sought solutions to this problem via process modification, 4, 6 ion substitution, 5, 7 and insertion of a buffer layer. 8,9 With the use of oxide electrodes, the processing temperatures of the electrodes are usually high, 10, 11 which can degrade the leakage current characteristics of these films. However, the reliability can be improved. On the other hand, it is usually difficult to control the composition of doped BFO films with ion substitution. Insertion of buffer layers, such as PbTiO 3 , 12 (Ba x Sr 1−x )TiO 3 (BST), 12-14 Bi 4 Ti 3 O 12 -based, 8 and doped ferroelectric films, 9, 15 between the ferroelectric film and electrode has been reported to lower the crystallization temperature, improve the electric properties, reduce interdiffusion between the ferroelectric film and substrate, and suppress generation of defects.In this study, BST was chosen as the buffer layer for several reasons: (1) BST is similar to BFO in lattice and crystal structure; therefore, it will not introduce any additional chemical or processing complexity and can assist in the crystallization process of the BFO films; (2) BST is also expected to act as a sink for oxygen vacancies or defects in the buffer layer; (3) BST can block charge injection from the bottom electrode; and finally, (4) antiferroelectric films are reported 16 to have lower internal stress in comparison with ferroelectrics due to only a 180 • change in polarization direction during the antiferroelectric-ferroelectric switching. By using rf-magnetron sputterin...

show abstract

Characterization of highly (110)- and (111)-oriented Pb(Zr,Ti)O3 films on BaPbO3 electrode using Ru conducting barrier

Cited by 15 publications

References 18 publications

Influence of the growth direction on properties of ferroelectric ultrathin films

Influence of the growth direction on properties of ferroelectric ultrathin films

Influence of buffer layer on structural, electrical and mechanical properties of PZT/NiTi thin film heterostructures

Enhanced Characterizations of rf-Magnetron Sputtered BiFeO3 Thin Film Using (Ba0.5, Sr0.5)TiO3 Buffered Layer

Contact Info

Product

Resources

About