Characterization of highly doped n- and p-type 6H-SiC piezoresistors

Okojie, Robert S.; Ned, A.A.; Kurtz, A. D.; Carr, W.N.

doi:10.1109/16.662776

Cited by 73 publications

(46 citation statements)

References 8 publications

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“…The piezoresistive effect in AlGaN/GaN heterostructures has also been investigated in [19], where the measured gauge factor was more than one order of magnitude lower. It should be noted that the piezoresistive gauge factor of AlGaN/GaN hetrostructures is approximately three times higher than the highest gauge factors reported for 3C-SiC [12] or 6H-SiC [16].…”

Section: Piezoresistive Effect Of Algan Layers and Algan/gan Heterostmentioning

confidence: 89%

“…Due to heteroepitaxial growth on silicon substrates, cubic silicon carbide sensor elements with a sizeable piezoresistive effect even at temperatures above 300°C [12] can easily be integrated into Si micromaching technologies [13,14]. Hexagonal SiC layers homoepitaxially grown on bulk substrates also exhibit high temperature stable piezoresistive properties and have been employed for the fabrication of high temperature pressure sensor chips [15,16].…”

Section: Piezoresistive Effect Of Algan Layers and Algan/gan Heterostmentioning

confidence: 98%

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Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures – Part B: Sensor applications

Eickhoff

Schalwig²,

Steinhoff

et al. 2003

phys. stat. sol. (c)

134

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In the present article recent results concerning sensor applications of AlGaN layers and AlGaN/GaN heterostructures are summarized. The piezoresistive effect in piezoelectric AlGaN layers is investigated and the dependence of the piezoresistive gauge factor on the Al content is attributed to the influence of strain induced piezoelectric fields. An enhancement of this effect is observed in AlGaN/GaN heterostructures, resulting in high longitudinal gauge factors.The response of gas sensitive Pt:GaN Schottky diodes to hydrogen and hydrogen containing gases is analyzed up to temperatures of 600°C and employed to realize gas sensitive field effect transistors which are demonstrated to operate up to 400°C. In addition, ion sensitive field effect transistors (ISFETs) have also been fabricated on the basis of AlGaN/GaN heterostructures. The GaN surface shows a high pH sensitivity which is attributed to the presence of a thin native metal oxide layer on the surface.

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Section: Piezoresistive Effect Of Algan Layers and Algan/gan Heterostmentioning

confidence: 89%

Section: Piezoresistive Effect Of Algan Layers and Algan/gan Heterostmentioning

confidence: 98%

Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures – Part B: Sensor applications

Eickhoff

Schalwig²,

Steinhoff

et al. 2003

phys. stat. sol. (c)

134

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“…Nevertheless, techniques have been developed to bulk micromachine 6H-SiC substrates, most notably electrochemical etching and deep reactive ion etching. These processes have been used to fabricate several important MEMS structures, including piezoresistive pressure sensors, accelerometers and other structures that capitalize on the outstanding mechanical and electrical properties offered by 6H-SiC [47,51].…”

mentioning

confidence: 99%

Micro‐ and nanomechanical structures for silicon carbide MEMS and NEMS

Zorman

Parro

2008

Physica Status Solidi (b)

100

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Silicon carbide (SiC) is recognized as the leading semiconductor for high power and high temperature electronics owing to its outstanding electrical properties combined with mature processing technologies for monolithic structures. SiC has long been known for its outstanding mechanical and chemical properties making it equally attractive for mechanical structures in micro‐ and nanoelectromechanical systems (MEMS and NEMS). Recent advancements in bulk and surface micromachining have led to the development of SiC analogues to common Si‐based devices (i.e., resonators, pressure sensors). This paper presents an overview of MEMS and NEMS technologies that incorporate SiC as a key component in their mechanical structure, providing both a historical perspective as well as recent developments. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Compared to silicon, it has wider band gaps (2.9-3.2 eV, depending on polytype), near inert surface chemistry, superior thermomechanical properties, and functional piezoresistivity that extends beyond 600 °C [2,3]. However, existing long term reliability challenges, largely due to drifting zero pressure offset voltage, V oz , have prevented its permanent insertion into operational systems.…”

Section: Introductionmentioning

confidence: 99%

Temperature Induced Voltage Offset Drifts in Silicon Carbide Pressure Sensors

Okojie

Lukco

Nguyen

et al. 2012

Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT)

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We report the reduction of transient drifts in the zero pressure offset voltage in silicon carbide (SiC) pressure sensors when operating at 600 °C. The previously observed maximum drift of ± 10 mV of the reference offset voltage at 600 °C was reduced to within ± 5 mV. The offset voltage drifts and bridge resistance changes over time at test temperature are explained in terms of the microstructure and phase changes occurring within the contact metallization, as analyzed by Auger electron spectroscopy and field emission scanning electron microscopy. The results have helped to identify the upper temperature reliable operational limit of this particular metallization scheme to be 605 o C.

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Characterization of highly doped n- and p-type 6H-SiC piezoresistors

Cited by 73 publications

References 8 publications

Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures – Part B: Sensor applications

Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures – Part B: Sensor applications

Micro‐ and nanomechanical structures for silicon carbide MEMS and NEMS

Temperature Induced Voltage Offset Drifts in Silicon Carbide Pressure Sensors

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