Characterization of InAs quantum dots in strained InxGa1−xAs quantum wells

Stintz, A.; Liu, G. T.; Gray, A.L.; Spillers, R.; Delgado, Silverio; Malloy, K.J.

doi:10.1116/1.591412

Cited by 133 publications

(74 citation statements)

References 29 publications

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“…The substrate temperature was ramped to 590 °C for the growth of Al 0.08 Ga 0.92 As barrier layers and GaAs contact layers. The growth rates, substrate temperatures and the flux ratios were previously optimized 26 for maximizing the photoluminescence intensity from the quantum dots. Quantum dots were n-doped with Si with approximately two electrons per dot, for optimizing 27 the detector performance.…”

Section: Methodsmentioning

confidence: 99%

A monolithically integrated plasmonic infrared quantum dot camera

et al. 2011

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In the past few years, there has been increasing interest in surface plasmon-polaritons, as a result of the strong near-field enhancement of the electric fields at a metal-dielectric interface. Here we show the first demonstration of a monolithically integrated plasmonic focal plane array (FPA) in the mid-infrared region, using a metal with a two-dimensional hole array on top of an intersubband quantum-dots-in-a-well (DWELL) heterostructure FPA coupled to a read-out integrated circuit. Excellent infrared imagery was obtained with over a 160% increase in the ratio of the signal voltage (V s ) to the noise voltage (V n ) of the DWELL camera at the resonant wavelength of λ = 6.1 µm. This demonstration paves the way for the development of a new generation of pixel-level spectropolarimetric imagers, which will enable bio-inspired (for example, colour vision) infrared sensors with enhanced detectivity (D*) or higher operating temperatures.

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Section: Methodsmentioning

confidence: 99%

A monolithically integrated plasmonic infrared quantum dot camera

et al. 2011

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“…These wavelengths are impossible to achieve in quantum well (QW) InAs/GaAs structures due to the strain-limited thicknesses. It is shown that the QD density in laser structures can be enlarged significantly by growing the dots within In x Ga 1-x As/GaAs QWs, in so called dot-in-a-well (DWELL) structures [3,4]. In these structures photoluminescence has been enhanced due to better crystal quality of the layer surrounding QDs and more effective exciton capture into the QW and into QDs.…”

Section: Introductionmentioning

confidence: 99%

“…In these systems, the strong localization of an electronic wave function leads to an atomic-like electronic density of states and permits to realize the novel and improved photonic and electronic devices. Microlectronic and optoelectronic devices based on quantum wells (QWs) with InAs QDs have been the subject of investigation for the applications in semiconductor lasers for the optical fiber communication [1][2][3], infrared photo-detectors [4][5][6], electronic memory devices [7,8], as well as single electron devices and single photon light sources on the base of single-QD structures for the quantum information applications [9][10][11][12]. QDs are especially attractive for the applications in semiconductor lasers.…”

Section: Introductionmentioning

confidence: 99%

InAs Quantum Dots in Symmetric InGaAs/GaAs Quantum Wells

Torchynska¹

2012

Fingerprints in the Optical and Transport Properties of Quantum Dots

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“…InAs quantum dots (QDs) were grown inside of the symmetric In0.15Ga0.85As/GaAs quantum wells (the same In concentrations in buffer and capping [12,14]. The QD size increases from 12 to 28 nm and the QD density decreases from 1.1 1011 down to 1.3 1010 cm-2 versus QD growth temperatures [19].…”

Section: Experimental Conditionsmentioning

confidence: 99%

“…For laser or photodiode applications the surface density of QDs has to be high [9][10][11][12][13][14]. It was shown earlier [3] that the InAs QD density can be increased essentially if the QDs are grown inside of GaAs/capping In0.15Ga0.85As/buffer In0.15Ga0.85As/GaAs quantum wells [3].…”

Section: Introductionmentioning

confidence: 99%

Elastic Energy in Inas Quantum Dot-in-a-Well Structures

Velázquez-Lozada¹,

Camacho-González

Quino-Cerdan³

2014

ETET

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The photoluminescence (PL), its temperature dependence and X ray diffraction (XRD) have been studied in the symmetric In0.15Ga1-0.15As/GaAs quantum wells (QWs) with embedded InAs quantum dots (QDs), obtained with the variation of QD growth temperatures (470-535oC). The increase of QD growth temperatures is accompanied by the enlargement of QD lateral sizes (from 12 up to 28 nm) and by the shift non monotonically of PL peak positions. The fitting procedure has been applied on the base of Varshni analysis to the temperature dependences of PL peaks. The obtained Varshni parameters testify that in studied QD structures the process of In/Ga interdiffusion between QDs and capping/buffer layers takes place partially. However, this process cannot explain the difference in PL peak positions.The XRD study has revealed the high intensity peaks at 2Θ= 31.6-31.8o (Kα1, Kα2) that correspond to the X ray diffraction of the Kα1 and Kα2 lines of Cu source from the (200) crystal planes of cubic GaAs. It was shown that the XRD peak is the superposition of the diffraction from the GaAs substrate and GaAs layers of quantum wells. The position of diffraction peaks related to the cubic GaAs substrate coincides with the very well know XRD data for the bulk GaAs. It means that the elastic strain in the GaAs substrate has been relaxed. At the same time the peak positions of the (200) diffraction peaks in GaAs epitaxial layers shift to the high angles in comparison with the bulk GaAs, testifying the compression strain in GaAs epitaxial layers. The minimum of elastic strain is detected in the structure with QD grown at 510oC that manifests itself by the higher QD PL intensity and lower the PL peak energy.

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Characterization of InAs quantum dots in strained InxGa1−xAs quantum wells

Cited by 133 publications

References 29 publications

A monolithically integrated plasmonic infrared quantum dot camera

A monolithically integrated plasmonic infrared quantum dot camera

InAs Quantum Dots in Symmetric InGaAs/GaAs Quantum Wells

Elastic Energy in Inas Quantum Dot-in-a-Well Structures

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