Characterization of InGaAs/InP single quantum well structure on GaAs substrate with metamorphic buffer grown by molecular beam epitaxy

Radhakrishnan, K.; Yuan, Kehong; Wang, Wanjun

doi:10.1016/j.jcrysgro.2003.09.014

Cited by 13 publications

(9 citation statements)

References 17 publications

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“…One means to achieve the required lattice constant is the incorporation of a metamorphic buffer [3][4][5][6][7][8]. The native lattice constant of the buffer differs from the substrate, but rather than growing commensurately, the buffer relaxes towards its native unit cell geometry.…”

Section: Introductionmentioning

confidence: 99%

“…As the buffer relaxes, misfit dislocations are formed that thread up the {1 1 1} surfaces and produce nonradiative recombination centres in subsequent layers. However, several growth techniques have been employed to decrease the density of threading dislocations [3][4][5][6][7][8][9]. Such techniques involved: incorporating strained interfaces in the buffer [6,9]; growing all the layers involved in the buffer at lower temperatures [7,8]; or growing a low temperature layer before the buffer [3][4][5].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Improved InAsP metamorphic layers grown on an InP substrate using underlying InP grown at low temperatures

Czaban¹,

Thompson²,

Robinson³

2007

Semicond. Sci. Technol.

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The use of an InP epitaxial layer grown at low temperatures before the growth of a step-graded InAsP metamorphic buffer has been shown to provide a large improvement in the crystal quality of the final metamorphic layer. The improvement is evidenced by over an order of magnitude increase in photoluminescence intensity as well as a large reduction of the mosaic spread and the overall tilt of the relaxed layers.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Improved InAsP metamorphic layers grown on an InP substrate using underlying InP grown at low temperatures

Czaban¹,

Thompson²,

Robinson³

2007

Semicond. Sci. Technol.

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“…AFM scans over 15 × 15 μm 2 were performed to investigate the surface morphology of the In 0.82 Ga 0.18 As epitaxial layers of four samples. Slightly disordered corrugation patterns were observed, as shown in Figure 1 a–d, which may be associated with the three-dimensional growth mode of the epitaxial layer [ 27 ]. It can be clearly seen that the surface morphologies of sample A, B, and D ( Figure 1 a,b,d) are very similar in terms of the patterns of narrow and longer corrugations.…”

Section: Resultsmentioning

confidence: 99%

The Effect of Buffer Types on the In0.82Ga0.18As Epitaxial Layer Grown on an InP (100) Substrate

et al. 2018

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In0.82Ga0.18As epitaxial layers were grown on InP (100) substrates at 530 °C by a low-pressure metalorganic chemical vapor deposition (LP-MOCVD) technique. The effects of different buffer structures, such as a single buffer layer, compositionally graded buffer layers, and superlattice buffer layers, on the crystalline quality and property were investigated. Double-crystal X-ray diffraction (DC-XRD) measurement, Raman scattering spectrum, and Hall measurements were used to evaluate the crystalline quality and electrical property. Scanning electron microscope (SEM), atomic force microscope (AFM), and transmission electron microscope (TEM) were used to characterize the surface morphology and microstructure, respectively. Compared with the In0.82Ga0.18As epitaxial layer directly grown on an InP substrate, the quality of the sample is not obviously improved by using a single In0.82Ga0.18As buffer layer. By introducing the graded InxGa1−xAs buffer layers, it was found that the dislocation density in the epitaxial layer significantly decreased and the surface quality improved remarkably. In addition, the number of dislocations in the epitaxial layer greatly decreased under the combined action of multi-potential wells and potential barriers by the introduction of a In0.82Ga0.18As/In0.82Al0.18As superlattice buffer. However, the surface subsequently roughened, which may be explained by surface undulation.

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“…First, an abrupt interface with a large lattice mismatch usually gives rise to three-dimensional nucleation, with the associated surface roughening, but use of a thin low-temperature (LT) buffer can alleviate this difficulty [40]. This results in the smallest possible critical layer thickness for the onset of lattice relaxation, apart from the use of reverse grading.…”

Section: Uniform Buffer Layersmentioning

confidence: 99%

Low-Temperature and Metamorphic Buffer Layers

Ayers

2015

Handbook of Crystal Growth

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Characterization of InGaAs/InP single quantum well structure on GaAs substrate with metamorphic buffer grown by molecular beam epitaxy

Cited by 13 publications

References 17 publications

Improved InAsP metamorphic layers grown on an InP substrate using underlying InP grown at low temperatures

Improved InAsP metamorphic layers grown on an InP substrate using underlying InP grown at low temperatures

The Effect of Buffer Types on the In0.82Ga0.18As Epitaxial Layer Grown on an InP (100) Substrate

Low-Temperature and Metamorphic Buffer Layers

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