Characterization of InP-based pseudomorphic HEMT with T-gate

Dubey, Shashank Kumar; Sinha, Krishnpriya; Sahu, Pawan Kumar; Ranjan, Ritesh; Pal, Atandra; Islam, Aminul

doi:10.1007/s00542-019-04491-3

Cited by 17 publications

(6 citation statements)

References 18 publications

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“…With the help of floating metal triple-teeth, which is embedded in the GaN channel layer between drain and gate of proposed HEMT, f T and f MAX can be further improved. This floating metal triple-teeth eliminates the virtual gate between the gate terminal and drain terminal [17,18]. The drain current decreases because of a decrement in the electron concentration in the channel [19].…”

Section: Introductionmentioning

confidence: 99%

Al_0.30Ga_0.70N /GaN MODFET with triple-teeth metal for RF and high-power applications

Dubey¹,

Islam²

2022

Phys. Scr.

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A modulation-doped field-effect transistor (MODFET) has been investigated in this paper. It is also called HEMT (high electron mobility transistor). The proposed MODFET is made up of Al0.30Ga0.70N as supply layer and GaN as channel or buffer layer, in which floating metal is embedded. Its T-gate is recessed to obtain higher gm, which results in improved RF characteristics. T-gate is used to minimize the gate resistance which reduces the power consumption of the proposed HEMT. A floating metal having triple teeth (TT), which resembles a comb is developed in GaN channel/buffer layer between the gate and drain electrodes to improve the device performance without increasing the dimensions of the device. The transition or cutoff frequency (f T) of 125 GHz and unity power gain (also called) maximum oscillation) frequency (f MAX) of 530 GHz at V DS = 10 V with V GS = 0.4 V have been reported in this paper. Analysis of power consumption of the proposed FET such as power gain (A P), output power (P OUT), and power-added efficiency (PAE) have been analyzed at 10 GHz in continuous wave mode and V DS= 35 V have been analyzed. The value obtained for P OUT, AP, and PAE is 67.5 dBmW, 11.6 dB, and 24.6%, respectively. All the obtained results from the Silvaco TCAD software have been verified with the mathematical model.

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Section: Introductionmentioning

confidence: 99%

Al_0.30Ga_0.70N /GaN MODFET with triple-teeth metal for RF and high-power applications

Dubey¹,

Islam²

2022

Phys. Scr.

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“…Among different semiconductor devices, high electron mobility transistors (HEMTs) have taken a leap over the past few decades. HEMT is a form of field effect transistor (FET) incorporating a heterojunction (forms due to the employment of materials with varying band gaps) 1–4 . HEMT provides high performance at microwave and radio frequencies 5–6 .…”

Section: Introductionmentioning

confidence: 99%

“…HEMT is a form of field effect transistor (FET) incorporating a heterojunction (forms due to the employment of materials with varying band gaps). [1][2][3][4] HEMT provides high performance at microwave and radio frequencies. [5][6] As of recently, gallium nitride (GaN) HEMTs have also been used for wireless base station applications.…”

Section: Introductionmentioning

confidence: 99%

Characterization of AlGaN/GaN based HEMT for low noise and high frequency application

Dubey

Mishra

Islam

2021

Int J Numerical Modelling

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This article presents a detailed study on AlGaN/GaN based HEMT for DC (such as ID − VDS, ID − VGS and gm), RF (such as cut off frequency, fT and maximum oscillation frequency, fMAX) and noise parameters (such as minimum noise figure (NFmin), noise resistance (Rn) and optimum reflection coefficient (Гopt)). AlGaN/GaN based HEMT having gate length 250 nm and 500 nm have been simulated and verified on the Silvaco TCAD tool.

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“…The terahertz monolithic integrated circuit (TMIC) of 850 GHz receiver and transmitter on 25 nm InP HEMT is demonstrated for medical, industrial and commercial communication systems which represents the highest‐frequency integrated receiver and transmitter based on InP HEMT technology 7 . From a recent comparative characteristics study of In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As/InP HEMT with rectangular and T‐shaped gate structures, it is reported that the T‐shaped gate structure shows performance improvement in DC and RF characteristics due to ‘ In ’ content in the material system 8 . Furthermore, dynamic‐bias measurements were used to model the non‐linear current and charges in the millimetre‐wave FET 9 .…”

Section: Introductionmentioning

confidence: 99%

“…7 From a recent comparative characteristics study of In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As/InP HEMT with rectangular and T-shaped gate structures, it is reported that the T-shaped gate structure shows performance improvement in DC and RF characteristics due to 'In' content in the material system. 8 Furthermore, dynamic-bias measurements were used to model the non-linear current and charges in the millimetre-wave FET. 9 This approach additionally help to get time-domain waveforms of investigated devices.…”

Section: Introductionmentioning

confidence: 99%

2DEG characteristics of InAlAs/InP based HEMTs by solving Schrödinger and Poisson equations followed by device characteristics

Lenka

Singh

Tripathy

et al. 2021

Int J Numerical Modelling

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In this paper the 2DEG characteristics study of InAlAs/InP based high electron mobility transistor (HEMT) structures with two different channel materials (InAlAs and InGaAs) are presented through self‐consistent solutions of Schrodinger and Poisson equations which results in energy bands, sheet charge density, electric field, sheet resistance and CV charactristics. The 2DEG (two dimensional electron gas) is created at the heterointerface of InAlAs/In(Al,Ga)As due to conduction energy band discontinuity. The 2DEG is realised by the presence of subbands at the quantum well. The subbands represent the wave function of electrons. The innovation of this work is that InAlAs and InGaAs with x = 0.75 composition can be best utilised as channel material due to low bandgaps 0.821 and 0.639 eV respectively towards improved 2DEG density, subbands, channel sheet resistance, electric field in the 2DEG and CV characteristics. The DC characteristics comprised of Id ~ Vg, Id ~ Vd, transconductance, cut‐off frequency, maximum frequency of oscillation are extracted through TCAD simulations followed by experimental validation. The InGaAs/InP based HEMT can be a potential candidate for ultra‐high‐speed microwave and millimetre wave applications.

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Characterization of InP-based pseudomorphic HEMT with T-gate

Cited by 17 publications

References 18 publications

Al_0.30Ga_0.70N /GaN MODFET with triple-teeth metal for RF and high-power applications

Al_0.30Ga_0.70N /GaN MODFET with triple-teeth metal for RF and high-power applications

Characterization of AlGaN/GaN based HEMT for low noise and high frequency application

2DEG characteristics of InAlAs/InP based HEMTs by solving Schrödinger and Poisson equations followed by device characteristics

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Characterization of InP-based pseudomorphic HEMT with T-gate

Cited by 17 publications

References 18 publications

Al0.30Ga0.70N /GaN MODFET with triple-teeth metal for RF and high-power applications

Al0.30Ga0.70N /GaN MODFET with triple-teeth metal for RF and high-power applications

Characterization of AlGaN/GaN based HEMT for low noise and high frequency application

2DEG characteristics of InAlAs/InP based HEMTs by solving Schrödinger and Poisson equations followed by device characteristics

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Al_0.30Ga_0.70N /GaN MODFET with triple-teeth metal for RF and high-power applications

Al_0.30Ga_0.70N /GaN MODFET with triple-teeth metal for RF and high-power applications