Characterization of interface quality between various low-temperature oxides and Si using room-temperature-photoluminescence and Raman spectroscopy

Abstract

Abstract

Investigation of Plasma Enhanced Chemical Vapor Deposition Chamber Mismatching by Photoluminescence and Raman Spectroscopy

“…Multiwavelength RTPL intensity ECS Journal of Solid State Science and Technology, 4 (8) P314-P318 (2015) P317 measurements of SiO 2 /Si wafers showed very promising features as a non-contact optical characterization technique for probing electrical properties of dielectric/Si structures. [16][17][18][19][20][21][22][23] The chamber-to-chamber RTPL intensity comparisons between the qualified chamber (Chamber B-1) and disqualified chamber (Chamber A) showed ∼20% reduction. The gas flow pattern change within the qualified chamber (Chamber B-1 and B-2) showed how gas flow impacts SiO 2 thickness distribution and RTPL intensity distribution on Si wafers.…”

“…The spectroscopic RTPL system (WaferMasters' MPL-300 system) is described elsewhere. [16][17][18][19][20][21][22][23] Multiwavelength, spectroscopic RTPL mapping was done at 15,101 points in 2 mm intervals in x-and y-directions. The penetration depths for the RTPL excitation wavelengths of 650 and 827 nm were ∼4.0 μm and ∼10 μm, respectively.…”

“…Multiwavelength micro-Raman system (MRS-300) is described elsewhere. [16][17][18]21,[23][24][25] The focused laser beam diameter at the wafer surface was in the range of ∼1 μm. The Raman probing depths in Si for 457.9, 488.0 and 514.5 nm laser beam are ∼290 nm, ∼490 nm and ∼645 nm, respectively.…”

Characterization of Hetero-Epitaxial Ge Films on Si Using Multiwavelength Micro-Raman Spectroscopy

“…3(c)). [37][38][39] The Raman excitation wavelength must not be longer than 850 nm in the case of a Ge/Si, Si 1-x Ge x /Ge or Si/Ge structure. Absorption coefficients and corresponding Raman probing depths of Ge and Si, under various excitation wavelengths, are summarized in Table I.…”

“…3(c)). [37][38][39] The Raman excitation wavelength must not be longer than 850 nm in the case of a Ge/Si, Si 1-x Ge x /Ge or Si/Ge structure.…”