Characterization of Interface State Density of Ni/p-GaN Structures by Capacitance/Conductance-Voltage-Frequency Measurements

Zhu, Zong-Hong; Zhang, Heqiu; Liang, Hongwei; Peng, Xincun; Zou, Ji‐Jun; Tang, Bin; Du, Guotong

doi:10.1088/0256-307x/34/9/097301

Cited by 10 publications

(4 citation statements)

References 29 publications

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“…where q is the electronic charge, A is the area of the capacitor, Gm,max is the peak value of conductance, ω = 2πf where f is the measurement frequency, Cox is the capacitance in accumulation region and Cm is the capacitance corresponding to Gm,max. This method has been successfully applied to the characterization of GaN based devices [496], [497], in which the G-V measurement [494] relies upon the assumption that energy losses and leakage currents in dielectrics are negligibly small [498]. To this end, quasi-static capacitance-voltage (QSCV) measurement [499] is rarely used in AlGaN/GaN HEMTs, because of the high leakage current associated with the Schottky gate [312].…”

Section: Interface Trap Characterization By Means Of C-v and G-v Meas...mentioning

confidence: 99%

GaN-based power devices: Physics, reliability, and perspectives

Meneghini

Santi

Abid

et al. 2021

Journal of Applied Physics

342

126

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Over the last decade, gallium nitride has emerged as an excellent material for the fabrication of power devices. Among the semiconductors for which power devices are already available on the market, GaN has the widest energy gap, the largest critical field, the highest saturation velocity, thus representing an excellent material for the fabrication of high speed/high voltage components.The presence of spontaneous and piezoelectric polarization allows to create a 2-dimensional electron gas, with high mobility and large channel density, in absence of any doping, thanks to the use of AlGaN/GaN heterostructures. This contributes to minimize resistive losses; at the same time, for GaN transistors switching losses are very low, thanks to the small parasitic capacitances and switching charges. Device scaling and monolithic integration enable high frequency operation, with consequent advantages in terms of miniaturization.For high power/high voltage operation, vertical device architectures are being proposed and investigated, and 3-dimensional structuresfin-shaped, trench-structured, nanowire-basedare demonstrating a great potential. Contrary to silicon, GaN is a relatively young material: trapping and degradation processes must be understood and described in detail, with the aim of optimizing device stability and reliability. This tutorial paper describes the physics, technology and reliability of GaN-based power devices: in the first part of the article, starting from a discussion of the main properties of the material, the characteristics of lateral and vertical GaN transistors are discussed in detail, to provide guidance in this complex and interesting field. The second part of the paper focuses on trapping and reliability aspects: the physical origin of traps in GaN, and the main degradation mechanisms are discussed in detail. The wide set of referenced papers and the insight on the most relevant aspects gives the reader a comprehensive overview on present and next-generation GaN electronics. IntroductionOver the past decade, gallium nitride has emerged as an excellent material for the fabrication of power semiconductor devices. Thanks to the unique properties of GaN, diodes and transistors based on this material have excellent performance, compared to their silicon counterparts, and are expected to find wide application in the next-generation power converters. Owing to the flexibility and the energy efficiency of GaN-based power converters, the interest towards this technology is rapidly growing: the aim of this tutorial is to review the most relevant physical properties, the operating principles, the fabrication parameters, and the stability/reliability issues of GaN-based power transistors. For introductory purposes, we start summarizing the physical reasons why GaN transistors achieve a much better performance than the corresponding silicon devices, to help the reader understanding the unique advantages of this technology.The properties of GaN devices allow the fabrication of high-efficiency (near or above 99 %)...

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Section: Interface Trap Characterization By Means Of C-v and G-v Meas...mentioning

confidence: 99%

GaN-based power devices: Physics, reliability, and perspectives

Meneghini

Santi

Abid

et al. 2021

Journal of Applied Physics

342

126

View full text Add to dashboard Cite

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“…As proposed and proved in previous studies [17,18], the interface traps can be quantitatively characterized by the dynamic capacitance dispersion technique. The traps near gate region can respond to ac signals.…”

Section: Further Verification Of the Dominant Degradation Mechanism B...mentioning

confidence: 70%

Electrical performances degradations and physics based mechanisms under negative bias temperature instability stress for p-GaN gate high electron mobility transistors

Zhang

Liu

et al. 2020

Semicond. Sci. Technol.

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In this paper, an in-depth evaluation of the negative bias temperature instability (NBTI) in p-GaN gate high electron mobility transistors with Schottky-type gate contact has been reported in detail. The measured results reveal that the threshold voltage (V th) positively shifts by 0.35 V and the on-state drain-source resistance (R dson) increases by 24.2 mΩ within 1 h at room temperature, even under the minimum allowed operating gate-voltage condition (V gs = −10 V) in the datasheet of the commercial device. With the help of energy band theory and experimental analyses, donor-type traps are demonstrated to dominate the degradation by reducing the positive charges in the p-GaN cap. Moreover, further quantitative analysis has been performed by the conductance–frequency measurements method. Considering the risk of degradation induced by NBTI, it turns necessary for the system designers to choose a more suitable negative bias operating condition so as to extend the robustness of the entire power system.

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“…Similar peak shift of G/ω is also observed in the Au/HfO 2 /Si (p-type) sample. Therefore, the interface states density could be calculated using the corrected G/ω − V curve according to the following equation [31]:…”

Section: Resultsmentioning

confidence: 99%

The study of interface quality in HfO₂/Si films probed by second harmonic generation

Ye,

Zhang,

Wang

et al. 2024

J. Phys. D: Appl. Phys.

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Time-dependent second harmonic generation (TD-SHG) is an emergent sensitive and non-contact method to qualitatively/quantitively characterize the semiconductor materials, which is closely related to the interfacial electric field. Here, the TD-SHG technique is used to study the interface quality of atomic layer deposited 15 nm HfO2/Si (n-type/p-type) samples, which is compared to the conventional electrical characterization method. A relation between the interface state density and the time constant extracted from TD-SHG is revealed, indicating that TD-SHG is an effective method to evaluate the interface state density. In addition, the dopant type and dopant density can be disclosed by resolving the dynamic process of TD-SHG. The scenario of interfacial electric field between the initial electric field and the laser-induced electric field is proposed to explain the time-dependent evolution of SHG signal. In conclusion, the TD-SHG is a sensitive and non-contact method as well as simple and fast to characterize the semiconductor materials, which may facilitate the semiconductor in-line testing.

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Characterization of Interface State Density of Ni/p-GaN Structures by Capacitance/Conductance-Voltage-Frequency Measurements

Cited by 10 publications

References 29 publications

GaN-based power devices: Physics, reliability, and perspectives

GaN-based power devices: Physics, reliability, and perspectives

Electrical performances degradations and physics based mechanisms under negative bias temperature instability stress for p-GaN gate high electron mobility transistors

The study of interface quality in HfO₂/Si films probed by second harmonic generation

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Characterization of Interface State Density of Ni/p-GaN Structures by Capacitance/Conductance-Voltage-Frequency Measurements

Cited by 10 publications

References 29 publications

GaN-based power devices: Physics, reliability, and perspectives

GaN-based power devices: Physics, reliability, and perspectives

Electrical performances degradations and physics based mechanisms under negative bias temperature instability stress for p-GaN gate high electron mobility transistors

The study of interface quality in HfO2/Si films probed by second harmonic generation

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Product

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The study of interface quality in HfO₂/Si films probed by second harmonic generation