Characterization of La_xHf_yO Gate Dielectrics in 4H-SiC MOS Capacitor

Abstract

LaxHfyO nanolaminated thin film deposited using atomic layer deposition process has been studied as a high-K gate dielectric in 4H-SiC MOS capacitors. The electrical and nano-laminated film characteristics were studied with increasing post deposition annealing (PDA) in N2O ambient. The result shows that high quality LaxHfyO nano-laminated thin films with good interface and bulk qualities are fabricated using high PDA temperature.