Characterization of Laser Patterned a-Si:H Thin Films by Combined AFM/Local Current Measurements

Abstract

Introduction. Laser interference crystallization of amorphous hydrogenated silicon (a-Si:H), followed by selective plasma-enhanced deposition and etching can be used for new large area microelectronic applications [1]. For example higher efficiency a-Si:H based solar cells with laterally structured microcrystalline silicon (µc-Si:H) bottom contact could be realized in this way [2].

Correlation of photoconductivity and structure of microcrystalline silicon thin films with submicron resolution

“…One approach is to employ atomic force microscopy ͑AFM͒ with a conductive cantilever as a point contact. 3,4 There, the advantage of an ultrahigh resolution is, however, subject to a rather complex electronic situation and requires ultrahigh vacuum conditions to achieve reproducible results. Another option is the use of optical beam induced current ͑OBIC͒ measurement where a focused laser beam illuminates a sample for local generation of photocarriers.…”