Characterization of Local Electronic Transport through Ultrathin Au/Highly-Dense Si Nanocolumnar Structures by Conducting-Probe Atomic Force Microscopy

Takeuchi, Daichi; Makihara, Katsunori; Ikeda, Mitsuhisa; Miyazaki, Seiichi; Kaki, Hirokazu; Hayashi, T.

doi:10.1587/transele.e96.c.718

Cited by 5 publications

(2 citation statements)

References 11 publications

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“…In our previous work, we succeeded in the fabrication of multiple-stacked Siquantum-dots (Si-QDs) layers with ultrathin SiO2 interlayers by repeating low-pressure chemical vapor deposition (LPCVD) using pure SiH4 and dry O2 thermal oxidation (12)(13). Recently, we also demonstrated electron emission from diodes with multiple-stacked Si-QDs structures under biases of 6V and over, in which electric field is concentrated the upper dot layers as evaluated by hard X-ray photoelectron spectroscopy (14)(15)(16)(17)(18)(19). To enhance electron emission efficiency, one major issue regarding the electron emission device application of the multiple-stacked Si-QDs is minimizing electron scattering at top electrodes.…”

Section: Introductionmentioning

confidence: 99%

Electron Field Emission from Multiply-Stacked Si Quantum Dots Structures with Graphene Top-Electrode

et al. 2020

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We have fabricated a diode with a multiple stacked Si-QDs structure and a single layer graphene top electrode, and studied their electron field emission properties. Electron emission current from the diode was observed by the application of forward biases of 6.0 V and over, which is ~1.0 V lower than that from a diode with a Au top electrode. In addition, we found that electron emission efficiency was increased by a factor of ~ 100 by replacing the top electrode from Au to graphene. This result is explained by the reduction of electron scattering at the top electrode. The results lead to the development of high efficiency planar-type electron emission devices.

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Section: Introductionmentioning

confidence: 99%

Electron Field Emission from Multiply-Stacked Si Quantum Dots Structures with Graphene Top-Electrode

et al. 2020

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“…In this work, to get an insight into ballistic electron transport through self-aligned Si-QDs, we extended our research work to the spatially-resolved characterization of electron emission from self-aligned Si-QDs formed on ultrathin SiO 2 /n-Si(100) by using a conductive cantilever [9].…”

Section: Introductionmentioning

confidence: 99%

Characterization of Electron Emission from High Density Self-Aligned Si-Based Quantum Dots by Conducting-Probe Atomic Force Microscopy

et al. 2014

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Self-aligned Si-quantum dots (QDs) with an areal density as high as ~1011 cm-2 were formed on ~1.0 nm thick SiO2/n-Si(100). For spatially-resolved characterization of electron emission from the aligned dots in a diode structure through Au top electrodes, current images were taken using atomic force microscopy in a non-contact mode while maintaining a distance of ~200 nm from the sample surface by using an Au-coated Si cantilever with DC negative bias application to an Al back contact with respect to the grounded Au top electrode at room temperature in atmosphere. In DC bias application of over -5.0 V, non-uniform current image contrast, which is attributable to local electron emission, emerged and enhanced with increasing applied bias. From the band diagram of the self-aligned dots structures at applied biases over -7 V, which is drawn by considering the dot size and oxide thickness evaluated using high resolution transmission electron microscopy observations, the quantized levels of the dots higher than the vacuum level of the top electrode and the tip are thought to be occupied by electrons, which can be interpreted in terms in which the tunneling rate between the lower to upper dots is enhanced as the electrons acquire high kinetic energies. Therefore, the observed electron emission implies quasi-ballistic transport through the aligned-dots structure.

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Evaluation of field emission properties from multiple-stacked Si quantum dots

et al. 2016

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Characterization of Local Electronic Transport through Ultrathin Au/Highly-Dense Si Nanocolumnar Structures by Conducting-Probe Atomic Force Microscopy

Cited by 5 publications

References 11 publications

Electron Field Emission from Multiply-Stacked Si Quantum Dots Structures with Graphene Top-Electrode

Electron Field Emission from Multiply-Stacked Si Quantum Dots Structures with Graphene Top-Electrode

Characterization of Electron Emission from High Density Self-Aligned Si-Based Quantum Dots by Conducting-Probe Atomic Force Microscopy

Evaluation of field emission properties from multiple-stacked Si quantum dots

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