Characterization of low-resistance ohmic contacts to <i>n</i>- and <i>p</i>-type InGaAs

Lin, Jiarui; Yu, Shaoyong; Mohney, Suzanne E.

doi:10.1063/1.4816097

Cited by 32 publications

(18 citation statements)

References 43 publications

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“…In the case of epitaxial doping, dopants are incorporated directly onto lattice sites while diffusion of atoms from interstitial sites onto lattice sites is required to achieve activation in the case of nonamorphizing implants. [28][29][30][31] Similarly, limited Si activation upon diffusion is also seen for the ionimplanted case.…”

Section: Resultsmentioning

confidence: 75%

Comparison of thermal annealing effects on electrical activation of MBE grown and ion implant Si-doped In0.53Ga0.47As

Lind¹,

Aldridge²,

Bomberger³

et al. 2015

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Heavily carbon-doped In 0.53 Ga 0.47 As on InP (001) substrate grown by solid source molecular beam epitaxyThe effect of thermal annealing on the net donor concentration and diffusion of Si in In 0.53 Ga 0.47 As is compared for electrically active layers formed by ion implantation versus molecular beam epitaxy (MBE). Upon thermal treatment at temperatures of 700 C or higher for 10 min, both ion implanted and growth-doped substrates converge to a common net donor solubility. These results indicate that while MBE doped substrates typically exhibit higher active concentrations relative to implanted substrates, the higher active Si concentrations from MBE growth are metastable and susceptible to deactivation upon subsequent thermal treatments after growth. Active Si doping concentrations in MBE doped material and ion-implanted materials are shown to converge toward a fixed net donor solubility limit of 1.4 Â 10 19 cm À3 . Secondary ion mass spectroscopy of annealed samples indicates that the diffusivity of Si in MBE doped substrates is higher than those of ion implanted substrates presumably due to concentration-dependent diffusion effects.

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Section: Resultsmentioning

confidence: 75%

Comparison of thermal annealing effects on electrical activation of MBE grown and ion implant Si-doped In0.53Ga0.47As

Lind¹,

Aldridge²,

Bomberger³

et al. 2015

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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show abstract

“…The proposed approach is demonstrated by fabricating Mo nano-contacts on n + -InGaAs heterostructures where we have extracted an average contact resistivity as low as 0.69 · μm 2 . This matches the stateof-the-art in this metal/semiconductor system [4]- [7]. The proposed test structure and model is not limited to III-V MOSFETs and can be used to analyze nano-scale contacts in any material system.…”

Section: Introductionmentioning

confidence: 63%

“…To meet this goal, the metal to semiconductor contact resistivity ρ c needs to be lower than 0.5 · μm 2 . Low values of ρ c for contacts on n + -InGaAs between 0.4 and 3.2 · μm 2 have been reported [4]- [7]. Currently, the contact resistance in lateral devices is mostly extracted using a TLM structure [8] or a four-terminal Kelvin test structure [9].…”

Section: Introductionmentioning

confidence: 99%

A Test Structure to Characterize Nano-Scale Ohmic Contacts in III-V MOSFETs

Vardi

et al. 2014

IEEE Electron Device Lett.

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Abstract-We propose and demonstrate a novel test structure to characterize the electrical properties of nano-scale metal-semiconductor contacts. The structure is in essence a two-port transmission line model (TLM) with contacts in the nanometer regime. Unlike the conventional TLM, two types of Kelvin measurements are possible. When performed on devices with different contact spacing, this allows the extraction of the contact resistance, the semiconductor sheet resistance, and the metal sheet resistance. For this, a 2-D distributed resistive network model has been developed. We demonstrate this technique in Mo/n + -InGaAs contacts with contact lengths from 19 to 450 nm where we have measured an average contact resistivity of 0.69 ± 0.3 · μm 2 . For relatively long contacts (>110 nm), this corresponds to an extremely small contact resistance of 6.6 ± 1.6 · μm.Index Terms-Nano contacts, TLM, contact resistivity, III-V MOSFET.

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“…Then Inductively coupled plasma-reactive ion etching (ICP-RIE) was used and the etching depth is about 360 nm to make sure the entire In 0.53 Ga 0.47 As thin film channel was formed. To ensure the good ohmic contact between metal and thin films, 2 nd UV lithography patterned Pt (9 nm)/Ti (15 nm)/Pt (15 nm)/Au (100 nm) film 29 was deposited by electron-beam evaporation and then followed by a lift-off process. The defined channel length between electrodes is 15 μm.…”

Section: Methodsmentioning

confidence: 99%

Minority carrier decay length extraction from scanning photocurrent profiles in two-dimensional carrier transport structures

Wei

Chu

Mao

2021

Sci Rep

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Carrier transport was studied both numerically and experimentally using scanning photocurrent microscopy (SPCM) in two-dimensional (2D) transport structures, where the structure size in the third dimension is much smaller than the diffusion length and electrodes cover the whole terminal on both sides. Originally, one would expect that with increasing width in 2D transport structures, scanning photocurrent profiles will gradually deviate from those of the ideal one-dimensional (1D) transport structure. However, the scanning photocurrent simulation results surprisingly showed almost identical profiles from structures with different widths. In order to clarify this phenomenon, we observed the spatial distribution of carriers. The simulation results indicate that the integrated carrier distribution in the 2D transport structures with finite width can be well described by a simple-exponential-decay function with the carrier decay length as the fitting parameter, just like in the 1D transport structures. For ohmic-contact 2D transport structures, the feasibility of the fitting formula from our previous 1D analytical model was confirmed. On the other hand, the application of a simple-exponential-decay function in scanning photocurrent profiles for the diffusion length extraction in Schottky-contact 2D transport structures was also justified. Furthermore, our simulation results demonstrate that the scanning photocurrent profiles in the ohmic- or Schottky-contact three-dimensional (3D) transport structures with electrodes covering the whole terminal on both sides will reduce to those described by the corresponding 1D fitting formulae. Finally, experimental SPCM on a p-type InGaAs air-bridge two-terminal thin-film device was carried out. The measured photocurrent profiles can be well fitted by the specific fitting formula derived from our previous 1D analytical model and the extracted electron mobility-lifetime product of this thin-film device is 6.6 × 10–7 cm2·V−1. This study allows us to extract the minority carrier decay length and to obtain the mobility-lifetime product which can be used to evaluate the performance of 2D carrier transport devices.

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Characterization of low-resistance ohmic contacts to n- and p-type InGaAs

Cited by 32 publications

References 43 publications

Comparison of thermal annealing effects on electrical activation of MBE grown and ion implant Si-doped In0.53Ga0.47As

Comparison of thermal annealing effects on electrical activation of MBE grown and ion implant Si-doped In0.53Ga0.47As

A Test Structure to Characterize Nano-Scale Ohmic Contacts in III-V MOSFETs

Minority carrier decay length extraction from scanning photocurrent profiles in two-dimensional carrier transport structures

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