Characterization of Low-Temperature Processed Poly-Si Film Prepared by Excimer Laser Annealing.

Matsuo, Naoto; Hamada, Hiroki; Aya, Yoichiro; Nouda, Tomoyuki; Miyoshi, Tadaki

doi:10.3131/jvsj.42.741

Cited by 4 publications

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“…[1][2][3][4][5][6] We have studied the crystal growth mechanism of the poly-Si film prepared by multipulse ELA at a low energy density to achieve poly-Si grain enlargement. [7][8][9][10][11][12][13][14] The results of electron spin resonance (ESR) measurement for an ELA poly-Si film indicated that the density of defects at grain boundary, such as dangling bonds, is much larger than that of in-grain defects. 7) The hydrogen in an amorphous silicon (a-Si) film strongly affects the spin density even after the recrystallization of the poly-Si film by ELA.…”

Section: Introductionmentioning

confidence: 99%

Grain Enlargement of Polycrystalline Silicon by Multipulse Excimer Laser Annealing: Role of Hydrogen

Kawamoto

Masuda

Matsuo

et al. 2006

jjap

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The role of hydrogen introduced into melt-Si during excimer laser annealing (ELA) is examined from the viewpoint of grain enlargement. An amorphous silicon (a-Si)/SiN/quartz glass structure is successfully prepared by a catalytic chemical vapor deposition (Cat-CVD) method for a SiN film, in which the hydrogen concentration of the SiN film is controlled. The grain size increases as the hydrogen concentration decreases, and it partially exceeds 2 mm when the hydrogen concentration of the SiN film is fixed at 2.3 at. %. The relationship between defects at grain boundary and hydrogen is also considered.

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Section: Introductionmentioning

confidence: 99%

Grain Enlargement of Polycrystalline Silicon by Multipulse Excimer Laser Annealing: Role of Hydrogen

Kawamoto

Masuda

Matsuo

et al. 2006

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“…32) Second, rapid secondary grain growth occurs when the laser energy density and shot number reach critical values. 16,17) These phenomena indicate that secondary grain growth occurs when the sum of the laser energy and the crystal defect energy becomes a critical value. When a laser with the critical energy density is irradiated on a-Si at the critical shot number, the critical number of defects are integrated at the grain boundary.…”

Section: Crystallization Modelmentioning

confidence: 99%

“…15,16) We also confirmed that the secondary grain growth of poly-Si film suddenly occurred at the critical energy density and critical shot number. 16,17) On the basis of these results, a new crystal growth model was presented. [18][19][20][21] The purpose of this paper is to review the characteristics of the poly-Si film recrystallized by the ELA method.…”

Section: Introductionmentioning

confidence: 99%

“…In our group, the mechanism of secondary grain growth by ELA has been examined to provide a high-quality large-grained film. [15][16][17][18][19][20][21][22][23][24][25][26] Here, the secondary grain is defined as having a grain size larger than the film thickness. It was found by electron spin resonance (ESR) measurement that most of the crystal defects were located at the grain boundary of poly-Si film and that hydrogen in a-Si film influenced the crystallinity of the poly-Si.…”

Section: Introductionmentioning

confidence: 99%

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Stress Relaxation of Poly-Si Film Formed by Excimer Laser Annealing

Matsuo

2005

Mater. Trans.

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We investigated the low-temperature processed polycrystalline-silicon (poly-Si) film formed by carrying out low-energy-density and multishot excimer laser annealing (ELA) of amorphous Si (a-Si) film on a glass or quartz substrate. The influence of secondary grain growth which grain size becomes larger than the film thickness on the tensile stress relaxation of the poly-Si film was clarified. Relationship between hydrogens which are supplied to the melt-Si from the bottom catalytic-chemical vapor deposition (Cat-CVD) SiN film and the stress relaxation was also examined. The tensile stress in the poly-Si film relaxes upon the appearance of the secondary grains, and the stress decreases with increasing diameter of the secondary grains. However, the hydrogen supply to melt-Si suppresses the secondary grain growth and the stress relaxation becomes marked as the hydrogen concentration decreases. Furthermore, the relationship between the dangling bond density corresponding to the crystal defect density and grain size was investigated, and the defect site was clarified. Lastly, the recrystallization model by ELA at low energy densities was discussed. The model was constructed based on the experimental data that the secondary grain growth occurs suddenly at the critical energy density and the critical shot number, and it was shown that the present model is consistent with the results related to the hydrogen concentration and the secondary grain growth.

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“…13) It is considered that the large grain size is due to the low nucleus density during rapid cooling from the melt phase after flash lamp irradiation. 14,15) From the EBSD analysis, it was found that the main surface orientation was (001). This result suggests the possibility of controlling the surface orientation by this method, although the mechanism has not yet been clarified.…”

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High-performance poly-Ge short-channel metal–oxide–semiconductor field-effect transistors formed on SiO₂layer by flash lamp annealing

Usuda

Kamata

Kamimuta

et al. 2014

Appl. Phys. Express

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To realize a stackable complementary metal–oxide–semiconductor field-effect transistor (CMOSFET) on interlayer dielectrics for three-dimensional (3D) large-scale-integration devices, we investigated poly-Ge thin films formed by flash lamp annealing. The process resulted in crystalline grains of micrometer-order size, and the Hall-effect mobility of holes was as high as 200 cm2 V−1 s−1. A depletion-type trigate poly-Ge channel pMOSFET with a gate length of 80 nm formed on a poly-Ge film exhibited a drive current of 280 µA/µm at a drain voltage of −1 V and a gate overdrive of −1 V. The operation of inversion-type short-channel trigate poly-Ge nMOSFETs was also demonstrated.

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Characterization of Low-Temperature Processed Poly-Si Film Prepared by Excimer Laser Annealing.

Cited by 4 publications

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Grain Enlargement of Polycrystalline Silicon by Multipulse Excimer Laser Annealing: Role of Hydrogen

Grain Enlargement of Polycrystalline Silicon by Multipulse Excimer Laser Annealing: Role of Hydrogen

Stress Relaxation of Poly-Si Film Formed by Excimer Laser Annealing

High-performance poly-Ge short-channel metal–oxide–semiconductor field-effect transistors formed on SiO₂layer by flash lamp annealing

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Characterization of Low-Temperature Processed Poly-Si Film Prepared by Excimer Laser Annealing.

Cited by 4 publications

References 0 publications

Grain Enlargement of Polycrystalline Silicon by Multipulse Excimer Laser Annealing: Role of Hydrogen

Grain Enlargement of Polycrystalline Silicon by Multipulse Excimer Laser Annealing: Role of Hydrogen

Stress Relaxation of Poly-Si Film Formed by Excimer Laser Annealing

High-performance poly-Ge short-channel metal–oxide–semiconductor field-effect transistors formed on SiO2layer by flash lamp annealing

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High-performance poly-Ge short-channel metal–oxide–semiconductor field-effect transistors formed on SiO₂layer by flash lamp annealing