Characterization of Material Properties at Terahertz Frequencies

Giles, Robert H.

doi:10.21236/ada462276

Cited by 5 publications

(4 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The loss tangent of HR silicon evaluated from the ellipsometric measurements of the refractive index and the extinction coefficient at frequencies from 580 to 2550 GHz performed by Giles [8] lay in the range tanδ = (2.3 − 4.1) × 10 −5 with the measurement uncertainties at the order of 2 × 10 −5 . The refractive index obtained by Giles [8] at room temperature (n = 3.4162 ± 0.0002) is in perfect agreement with the measurement data shown in Fig. 2, which confirms that the real part of the permittivity of silicon is nondispersive up to terahertz frequencies.…”

Section: Methodsmentioning

confidence: 99%

Irradiated Silicon for Microwave and Millimeter Wave Applications

Křupka

Salski

Karpisz

et al. 2022

IEEE Microw. Wireless Compon. Lett.

View full text Add to dashboard Cite

Complex permittivity measurements of irradiated high-resistivity float-zone silicon have been performed in this letter from microwave to millimeter-wave frequencies employing three different resonance techniques. It has been proven that the irradiated silicon exhibits resistivity of the intrinsic silicon at temperatures larger than 295 K and the loss tangent due to phonon absorption reaches about 10 −5 at room temperature. The total loss tangent of the room-temperature irradiated silicon is smaller than 6 × 10 −5 at frequencies larger than 5 GHz. The real part of the complex permittivity of silicon linearly increases with temperature for T > 200 K.

show abstract

Section: Methodsmentioning

confidence: 99%

Irradiated Silicon for Microwave and Millimeter Wave Applications

Křupka

Salski

Karpisz

et al. 2022

IEEE Microw. Wireless Compon. Lett.

View full text Add to dashboard Cite

show abstract

“…Creating a physical mask to modulate THz radiation has the great advantage that this is the easiest in terms of manufacturing with great modulation depth, > 99%, over very broadband frequency ranges. This is because most semiconductors and plastics are THz transparent whereas conductive metals absorb and reflect THz radiation [44]. Thus PCB manufacturing techniques can be used to create a set of spatial masks.…”

Section: Mechanical Masksmentioning

confidence: 99%

Spatial Terahertz-Light Modulators for Single-Pixel Cameras

Stantchev¹,

Pickwell‐MacPherson²

2022

Terahertz Technology

View full text Add to dashboard Cite

Terahertz imaging looks set to become an integral part of future applications from semiconductor quality control to medical diagnosis. This will only become a reality when the technology is sufficiently cheap and capabilities adequate to compete with others. Single-pixel cameras use a spatial light modulator and a detector with no spatial-resolution in their imaging process. The spatial-modulator is key as it imparts a series of encoding masks on the beam and the detector measures the dot product of each mask and the object, thereby allowing computers to recover an image via post-processing. They are inherently slower than parallel-pixel imaging arrays although they are more robust and cheaper, hence are highly applicable to the terahertz regime. This chapter dedicates itself to terahertz single-pixel cameras; their current implementations, future directions and how they compare to other terahertz imaging techniques. We start by outlining the competing imaging techniques, then we discuss the theory behind single-pixel imaging; the main section shows the methods of spatially modulating a terahertz beam; and finally there is a discussion about the future limits of such cameras and the concluding remarks express the authors’ vision for the future of single-pixel THz cameras.

show abstract

“…95 in the present work [27,28]. The losses of Si and SiO2 are not taken into account, because their extinction coefficients are negligible within frequency of interest [29][30][31]. Moreover, the indium antimonide (InSb) is selected as the semiconductor material due to its narrow energy gap and large electron density, which has been demonstrated to support the low-loss and tight-confined THz SPP modes [32].…”

Section: Basic Considerations and Design Principlementioning

confidence: 99%