Characterization of MBE grown GaAs/AlGaAs heterointerfaces with photoluminescence from quantum wells

Optical properties of AlAs/GaAs quantum wells with antimony as a surfactant by solid source molecular beam epitaxy

“…We used m à c ¼ 0:067m 0 and m à hh ¼ 0:34m 0 for the calculation [16]. Here m 0 is the free electron mass.…”

Substrate orientation effect on potential fluctuations in multiquantum wells of GaAs∕AlGaAs

“…However, this was not observed in our experiment. We believe that other mechanisms such as the built-in piezoelectric field, effective mass anisotropy, [29][30][31] and interface roughnesses 26,32 could be related to the PL peak shift as a consequence of the different crystallographic orientations.…”

Effects of indium doping on the properties of AlAs/GaAs quantum wells and inverted AlGaAs/GaAs two-dimensional electron gas

“…Figure 3(a) shows the typical PL spectra of the first group samples at 13 K. All the excitonic recombination peaks related to QWs are single peaks, which indicates that the lateral size of growth islands is not as large as the exciton diameter (∼15 nm) [12]. The PL linewidths of the samples as a function of photon energy are plotted in figure 3 The energy levels in a quantum well equal those from an infinite square well potential [19],…”

“…In this calculation, we used the following effective masses: m * e = 0.067m 0 for electrons and m * hh = 0.34m 0 for the heavy hole. Here m 0 is the free electron mass [19]. According to this equation, the interface roughness of 5 nm quantum wells of sample A and sample B is 0.11 nm and 0.05 nm, that of 8 nm quantum wells of sample A and sample B is 0.25 nm and 0.17 nm and that of 10 nm quantum wells of sample A and sample B is 0.32 nm and 0.24 nm.…”