All-ceramic multilayer composite ytterbium doped yttrium aluminum garnet (Yb:YAG) laser gain medium with doping concentration distribution of 0-5-10-15-20-15-10-5-0 at.% Yb ions was successfully fabrication by the technique of c

The effects of indium doping on the optical properties of AlAs/GaAs quantum wells (QWs) and the electrical properties of inverted AlGaAs/GaAs two-dimensional electron gas (2DEG) were investigated. It is found that incorporation of a small amount of In in AlAs layers can decrease the photoluminescence linewidths of AlAs/GaAs QWs drastically and a small amount of In doping in AlGaAs layers can increase significantly the electron mobilities of inverted AlGaAs/GaAs 2DEG at 77 K. All these results demonstrate that In doping can improve the interface roughness because In as a surfactant can enhance the surface migration of Al adatoms during molecular beam epitaxy.