Characterization of Metal–Insulator–Semicomductor Capacitors with Insulating Nitride Films Grown on 4H-SiC

Abstract

Nitrided layers were grown on a 4H-SiC(0001) by plasma nitridation method using NH 3 . Nitridation was enhanced with increasing RF power and with decreasing growth pressure. However, the exact capacitance-voltage (C-V) properties of the nitride layer/SiC interface could not be determined because of the leakage current. The SiO 2 film was deposited on the nitrided layer by thermal chemical vapor deposition method using tetraethoxysilane (TEOS) omit obtain an insulating film with sufficient thickness and an exact interface property. The interface state density D it was evaluated from C-V characteristics by the Terman method. It was indicated that D it near the mid gap of the TEOS oxide/nitride layer structure was higher than those of the TEOS-SiO 2 films and thermal oxide film. The D it of the oxide/nitride layer successfully decreased by post NH 3 annealing.

Plasma Nitridation of 4H-SiC by Glow Discharge of N₂/H₂ Mixed Gases

“…We have reported that a direct nitridation layer might be a successful candidate for SiC passivation [1,2,5]. Shirasawa et al reported on the formation of an epitaxial silicon oxynitride SiON layer on a 6H-SiC (0001) surface, which offers great potential for device applications [6].…”

Preparation and Characterization of Nitridation Layer on 4H SiC (0001) Surface by Direct Plasma Nitridation

“…Few papers have reported about nitridation of SiC surface. We have proposed that a direct nitridation layer might be a candidate for SiC passivation [2,3,4]. Shirasawa et al reported on the formation of an epitaxial silicon oxynitride (SiON) layer on a 6H-SiC (0001) surface, which offers great potential for device applications [5].…”

Effects of Interface Nitride Layer on Electrical Characteristics of SiO2/Nitride/SiC Metal–Insulator–Semiconductor Diode

“…We have formed an insulating nitride layer on SiC by direct nitridation. 2,3) Chai et al also reported a Si 3 N 4 passivation layer grown on the 4H-SiC(0001) surface by direct atomic source nitridation at various substrate temperatures. 4) Although direct nitridation seemed to be an attractive method to form an insulating layer on SiC, it has been difficult to obtain nitride layers thicker than several nm by the direct nitridation method.…”

“…4) Although direct nitridation seemed to be an attractive method to form an insulating layer on SiC, it has been difficult to obtain nitride layers thicker than several nm by the direct nitridation method. [2][3][4] In this study, the nitride layer was formed on a SiC surface by direct nitridation in NH 3 or N 2 , and was characterized by X-ray photoelectron spectroscopy (XPS). The MIS Schottky diode was formed on SiC using the nitride layer as the interface layer.…”