Characterization of Metamorphic GaAsP/Si Materials and Devices for Photovoltaic Applications

Grassman, Tyler J.; Brenner, Mark; González, M.; Carlin, Andrew M.; Unocic, Raymond R.; DeHoff, R. T.; Mills, Michael J.; Ringel, S. A.

doi:10.1109/ted.2010.2082310

Cited by 101 publications

(77 citation statements)

References 22 publications

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“…While a silicon substrate offers many cost and even mechanical strength advantages, the inability to grow high quality III-V materials on silicon precluded this potentially transformative technological development (Almansouri et al, 2015a(Almansouri et al, , 2015b. Recent developments in growth techniques have once again opened up the possibility of realizing multi-junctions with active silicon substrates with III-V upper layers (Grassman et al, 2010) and more unconventional materials such as Perovskites (Green, 2014) and CZTS (Beiley andMcGehee, 2012, Green et al, 2013). Assuming that high performing material can be deposited on silicon, and the silicon design can be optimized as part of the MJ stack (Almansouri et al, 2015a(Almansouri et al, , 2015b, the most pressing question is then, what is the limiting performance of a MJ with silicon as the bottom cell?…”

Section: Silicon As the Active Substratementioning

confidence: 99%

Optimum band gap combinations to make best use of new photovoltaic materials

Bremner

Almansouri³

et al. 2016

Solar Energy

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Section: Silicon As the Active Substratementioning

confidence: 99%

Optimum band gap combinations to make best use of new photovoltaic materials

Bremner

Almansouri³

et al. 2016

Solar Energy

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“…One option is the creation of a Ge layer either directly or through the use of SiGe compounds (e.g., [24]). Another option is to realize a GaP nucleation followed by a buffer of Ga 1-x In x P or GaAs x P 1-x (e.g., [23,25]). GaAs, GaInP, and AlGaAs solar cells on Si substrates have already been realized (e.g., [24,26,27]).…”

Section: Upright Metamorphic Growth Of Iii-v On Simentioning

confidence: 99%

III-V Multi-junction solar cells and concentrating photovoltaic (CPV) systems

Philipps

Bett

2014

Advanced Optical Technologies

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It has been proven that the only realistic path to practical ultra-high efficiency solar cells is the monolithic multi-junction approach, i.e., to stack pn-junctions made of different semiconductor materials on top of each other. Each sub pn-junction, i.e., sub solar cell, converts a specific part of the sun's spectrum. In this way, the energy of the sunlight photons is converted with low thermalization losses. However, largearea multi-junction solar cells are still far too expensive if applied in standard PV modules. A viable solution to solve the cost issue is to use tiny solar cells in combination with optical concentrating technology, in particular, high concentrating photovoltaics (HCPV), in which the light is concentrated over the solar cells more than 500 times. The combination of ultra-high efficient solar cells and optical concentration lead to low cost on system level and eventually to low levelized cost of electricity, today, well below 8 �cent/kWh and, in the near future, below 5 �cent/kWh. A wide variety of approaches exists for III-V multi-junction solar cells and HCPV systems. This article is intended to provide an overview about the different routes being followed.

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“…A technique of GaP nucleation with GaAsP graded buffer was used by Geisz et al [11] and Grassman et al [12]. Geisz et al achieved an AM1.5 efficiency of 9.8% with a V oc of 0.985 V (W oc of 0.73 V).…”

Section: Introductionmentioning

confidence: 99%