GaP films were grown on offcut Si(001) substrates using migration enhanced epitaxy nucleation followed by molecular beam epitaxy, with the intent of controlling and eliminating the formation of heterovalent (III-V/IV) nucleation-related defects—antiphase domains, stacking faults, and microtwins. Analysis of these films via reflection high-energy electron diffraction, atomic force microscopy, and both cross-sectional and plan-view transmission electron microscopies indicate high-quality GaP layers on Si that portend a virtual GaP substrate technology, in which the aforementioned extended defects are simultaneously eliminated. The only prevalent remaining defects are the expected misfit dislocations due to the GaP–Si lattice mismatch.

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GaP/Si heterostructures were grown by metal-organic chemical vapor deposition in which the formation of all heterovalent nucleation-related defects (antiphase domains, stacking faults, and microtwins) were fully and simultaneously suppressed, as observed via transmission electron microscopy (TEM). This was achieved through a combination of intentional Si(100) substrate misorientation, Si homoepitaxy prior to GaP growth, and GaP nucleation by Ga-initiated atomic layer epitaxy. Unintentional (311) Si surface faceting due to biatomic step-bunching during Si homoepitaxy was observed by atomic force microscopy and TEM and was found to also yield defect-free GaP/Si interfaces. V

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