Nucleation-related defect-free GaP/Si(100) heteroepitaxy via metal-organic chemical vapor deposition

Grassman, Tyler J.; Carlin, John A.; Galiana, B.; Yang, Limei; Yang, Fengyuan; Mills, Michael J.; Ringel, S. A.

doi:10.1063/1.4801498

Cited by 118 publications

(73 citation statements)

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“…In the case of NWs, however, increasing surface-to-volume ratio raises importance of recombination processes via surface states [17,21,22], however, the origin of these states is so far poorly understood. Existing reports on defect formation in III-V NWs and associated core/shell nanostructures were primarily focused on extended defects [23][24][25][26], which seem to be of limited importance in carrier recombination. Detailed studies of point and surface defects in GaNP-based NWs, and in 1D structures in general, remain scarce [27,28].…”

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confidence: 99%

Optimizing GaNP Coaxial Nanowires for Efficient Light Emission by Controlling Formation of Surface and Interfacial Defects

et al. 2014

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We report on identification and control of important non-radiative recombination centers in GaNP coaxial nanowires (NWs) grown on Si substrates, in an effort to significantly increase light emitting efficiency of these novel nanostructures promising for a wide variety of 2 optoelectronic and photonic applications. A point defect complex, labeled as DD1 and consisting of a P atom with a neighboring partner aligned along a crystallographic <111> axis, is identified by optically detected magnetic resonance as a dominant non-radiative recombination center that resides mainly on the surface of the NWs and partly at the hetero-interfaces. The formation of DD1 is found to be promoted by the presence of nitrogen and can be suppressed by reducing the strain between the core and shell layers, as well as by protecting the optically active shell by an outer passivating shell. Growth modes employed during the NW growth are shown to play a role.Based on these results, we identify the GaP/GaN y P 1-y /GaN x P 1-x (x

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confidence: 99%

Optimizing GaNP Coaxial Nanowires for Efficient Light Emission by Controlling Formation of Surface and Interfacial Defects

et al. 2014

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“…The overall process used for the epitaxial Ill-V/Si and Si subcell is described elsewhere [8,9] and is briefly summarized in Table I. To visualize the evolution of lifetime, a wide set of samples were grown, with interruptions at one of four different points in the process: 1) the formation of the emitter by Si homoepitaxial growth; 2) growth of the first layers of GaP; 3) growth of bulk GaP nucleation layer; and 4) growth of the GaAsP step-graded buffer.…”

Section: Methodsmentioning

confidence: 99%

Evolution of the silicon bottom cell photovoltaic behavior during III–V on Si multi-junction solar cells production

García‐Tabarés

Grassman

Martín

et al. 2015

2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)

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-The evolution of the Si bulk minority carrier lifetime during the heteroepitaxial growth of III-V on Si multijunction solar cell structures via metal-organic vapor phase epitaxy has been analyzed. Initially, the emitter formation produces important lifetime degradation. Nevertheless, a progressive recovery was observed during the growth of the metamorphic GaAsP/Si structure. A step-wise mechanism has been proposed to explain the lifetime evolution observed during this process. The initial lifetime degradation is believed to be related to the formation of thermally-induced defects within the Si bulk. These defects are subsequently passivated by fastdiffusing atomic hydrogen -coming from precursor (i.e. PH 3 and AsH 3 ) pyrolysis-during the subsequent III-V growth. These results indicate that the MOVPE environment used to create the Ill-V/Si solar cell structures has a dynamic impact on the minority carrier lifetime. Consequently, designing processes that promote the recovery of the lifetime is a must to support the production of high-quality Ill-V/Si solar cells.Index Terms -Minority carrier lifetime, III-V on Si, MJSC, Si bottom cell.

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“…From the plan-view image of Fig. 1(a), the morphology of the unburied QD can easily be defined at the atomic scale, analyzing angles of reconstructed facets with the nominal (001) plan, and QD edge direction angles with the [1][2][3][4][5][6][7][8][9][10] and [110] directions that is fixed by the dimer orientation on the (001) nominal surface [the wetting layer (WL), here]. Resulting geometry and crystallographic orientations are illustrated in Fig.…”

Section: Qd Geometry and Compositionmentioning

confidence: 99%

“…Unfortunately, crystalline defects generated during the III-V/Si heteroepitaxy are known to limit the laser device performances; a thick buffer layer is usually needed to avoid the emergence of these structural defects, which limits the optical coupling solutions with the silicon chip. Recently, it was proposed by several groups to use a pseudomorphic GaP/Si template, benefiting from the low lattice mismatch between GaP and Si (0.37% at room temperature) to eliminate the formation of these structural defects [7][8][9][10][11][12][13]. In this approach, the structural benefit is, however, counterbalanced by the limited optical properties of GaP-based materials because of the GaP indirect bandgap.…”

Section: Introductionmentioning

confidence: 99%

Electronic wave functions and optical transitions in (In,Ga)As/GaP quantum dots

et al. 2016

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Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers) Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publicationCitation for published version (APA): Robert, C., Pereira Da Silva, K., Nestoklon, M. O., Alonso, M. I., Turban, P., Jancu, J-M., ... Cornet, C. (2016). Electronic wave functions and optical transitions in (In,Ga)As/GaP quantum dots. Physical Review B, 94(7), 1-11. [075445]. DOI: 10.1103/PhysRevB.94.075445 General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. We study the complex electronic band structure of low In content InGaAs/GaP quantum dots. A supercell extended-basis tight-binding model is used to simulate the electronic and the optical properties of a pure GaAs/GaP quantum dot modeled at the atomic level. Transitions between hole states confined into the dots and several X Z -like electronic states confined by the strain field in the GaP barrier are found to play the main role on the optical properties. Especially, the calculated radiative lifetime for such indirect transitions is in good agreement with the photoluminescence decay time measured in time-resolved photoluminescence in the µs range. Photoluminescence experiments under hydrostatic pressure are also presented. The redshift of the photoluminescence spectrum with pressure is also in good agreement with the nature of the electronic confined states simulated with the tight-binding model.

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Nucleation-related defect-free GaP/Si(100) heteroepitaxy via metal-organic chemical vapor deposition

Cited by 118 publications

References 20 publications

Optimizing GaNP Coaxial Nanowires for Efficient Light Emission by Controlling Formation of Surface and Interfacial Defects

Optimizing GaNP Coaxial Nanowires for Efficient Light Emission by Controlling Formation of Surface and Interfacial Defects

Evolution of the silicon bottom cell photovoltaic behavior during III–V on Si multi-junction solar cells production

Electronic wave functions and optical transitions in (In,Ga)As/GaP quantum dots

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