2011
DOI: 10.1116/1.3628640
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Characterization of Mo/Si multilayer growth on stepped topographies

Abstract: Mo/Si multilayer mirrors with nanoscale bilayer thicknesses have been deposited on stepped substrate topographies, using various deposition angles. The multilayer morphology at the stepedge region was studied by cross section transmission electron microscopy. A transition from a continuous-to columnar layer morphology is observed near the step-edge, as a function of the local angle of incidence of the deposition flux. Taking into account the corresponding kinetics and anisotropy in layer growth, a continuum mo… Show more

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Cited by 3 publications
(3 citation statements)
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“…The wavelength dependency of the PsR-VUV reflectance closely approaches the combined average reflectance of the two reference samples [Fig. 2(a), solid line], advocating a negligible influence of structural deformations near the edges of the add-multilayer, as is in line with reference [12]. Although the data indicate not yet fully optimized reflectance values for none of the two reference systems, an absolute near zeroth-order efficiency of 64% in the EUV wavelength range is the highest reported up till now for any type of reflective wavelength separator, to the best knowledge of the authors.…”
supporting
confidence: 74%
“…The wavelength dependency of the PsR-VUV reflectance closely approaches the combined average reflectance of the two reference samples [Fig. 2(a), solid line], advocating a negligible influence of structural deformations near the edges of the add-multilayer, as is in line with reference [12]. Although the data indicate not yet fully optimized reflectance values for none of the two reference systems, an absolute near zeroth-order efficiency of 64% in the EUV wavelength range is the highest reported up till now for any type of reflective wavelength separator, to the best knowledge of the authors.…”
supporting
confidence: 74%
“…Edge rounding effects lead to non perfect periodicity of the multilayer near the edges of the grating facets. As it was studied with transmission electron microscopy in detail in our previous work, the width of this distorted area scales with the thickness/aperture ratio of the deposition contact mask, and with the angular anisotropy of the deposition flux [29]. Therefore the EUV reflectance loss could be minimized by employing lower mask thickness/aperture ratios, but in practice this requires increased pitch lengths [7].…”
Section: Resultsmentioning
confidence: 99%
“…We note that close to the edges of the Fresnel zones the multilayer period may deviate from its intended value, which would cause some EUV loss. However, it shows that the surface fraction of these edges and therefore also the according loss is very small, in the range of 1% [21]. Improved deposition techniques are available that further reduce this fraction [22].…”
Section: Calculation Of Fresnel Zone Patternmentioning
confidence: 99%