Characterization of molecular beam epitaxially grown InSb layers and diode structures

Lee, G.S.; Thompson, Phillip E.; Davis, J. L.; Omaggio, J. P.; Schmidt, William A.

doi:10.1016/0038-1101(93)90091-4

Cited by 18 publications

(7 citation statements)

References 21 publications

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“…The 80 K J dark at −50 mV was 0.085 A/cm 2 , which was comparable to the reported InSb photodetector on GaAs via a 100 nm GaSb buffer with the J dark of 0.11 A/cm 2 . However, it was much higher than the J dark (∼10 –7 A/cm 2 ) of the InSb photodetector on InSb …”

Section: Resultssupporting

confidence: 75%

Monolithic Integration of InSb Photodetector on Silicon for Mid-Infrared Silicon Photonics

et al. 2018

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The InSb photodetector on a Si substrate acts a signal receiver for the mid-infrared silicon photonics application to overcome the limitation of group IV semiconductors.In this paper, we demonstrated an InSb p-i-n photodetector with an InAlSb barrier layer grown on (100) silicon substrates via a GaAs/Ge buffer by molecular beam epitaxy. The lattice mismatch between InSb and GaAs was accommodated by an interfacial misfit (IMF) array. The 50% cutoff detectable wavelength of this detector increased from 5.7 µm at 80 K to 6.3 µm at 200 K. An 80 K detectivity of 8.8×10 9 cmHz 1/2 W -1 at 5.3 µm was achieved with a quantum efficiency of 16.3%. The dark current generating mechanism of this detector is both generation-recombination and surface leakage above 140 K, while it is only surface leakage from 120 K to 40 K.

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Section: Resultssupporting

confidence: 75%

Monolithic Integration of InSb Photodetector on Silicon for Mid-Infrared Silicon Photonics

et al. 2018

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“…3,11,12 A PbTe source oven was used for Te n-type doping of the InSb films. 13 Growth was then resumed in a conventional ͑continuous͒ growth mode at 410°C. During growth, the substrate temperatures were monitored using a Thermionics diffuse reflectance spectrometer ͑DRS͒-1000.…”

Section: Methodsmentioning

confidence: 99%

Effects of buffer layers on the structural and electronic properties of InSb films

Weng

Rudawski

Wang

et al. 2005

Journal of Applied Physics

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Effect of material properties on low-energy electron transmission in thin chemical-vapor deposited diamond films J. Appl. Phys. 97, 093717 (2005); 10.1063/1.1893212 Improved pseudomorphic high electron mobility transistor structures on InGaAs substratesWe have investigated the effects of various buffer layers on the structural and electronic properties of n-doped InSb films. We find a significant decrease in room-temperature electron mobility of InSb films grown on low-misfit GaSb buffers, and a significant increase in room-temperature electron mobility of InSb films grown on high-misfit InAlSb or step-graded GaSb+ InAlSb buffers, in comparison with those grown directly on GaAs. Plan-view transmission electron microscopy ͑TEM͒ indicates a significant increase in threading dislocation density for InSb films grown on the low-misfit buffers, and a significant decrease in threading dislocation density for InSb films grown on high-misfit or step-graded buffers, in comparison with those grown directly on GaAs. Cross-sectional TEM reveals the role of the film/buffer interfaces in the nucleation ͑filtering͒ of threading dislocations for the low-misfit ͑high-misfit and step-graded͒ buffers. A quantitative analysis of electron mobility and carrier-concentration dependence on threading dislocation density suggests that electron scattering from the lattice dilation associated with threading dislocations has a stronger effect on electron mobility than electron scattering from the depletion potential surrounding the dislocations. Furthermore, while lattice dilation is the predominant mobility-limiting factor in these n-doped InSb films, ionized impurity scattering associated with dopants also plays a role in limiting the electron mobility.

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“…The 80 K dark current density at 50 mV was 0.085 A/cm 2 , which was comparable to the reported InSb photodetector on GaAs via 100 nm GaSb buffer with the dark current density of 0.11 A/cm 2 [15]. However, it was much higher than the dark current density (~10 -7 Chapter 5 Integration of InSb Photodetector on Si via GaAs/Ge A/cm 2 ) of the InSb photodetector on InSb [196]. The dark current can be attributed to the absent of surface passivation in the InSb detector on Si and threading dislocations in InSb layer.…”

Section: Structural Characterizationsupporting

confidence: 70%

Highly lattice-mismatched epitaxy for III-V/Si integration

Jia¹

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Indium antimonide (InSb) is a competitive semiconductor for the applications in high electron mobility transistor and mid-infrared photodetector. Integration of InSb on GaAs and Si substrates is promising for higher performance of the devices and lower cost of fabrication, and becomes an important component of opto-electronic integrated circuits. Therefore, much effort has been made to investigate the novel heteroepitaxial approaches to overcome the high lattice mismatch (14.6% for InSb/GaAs and 19.3% for InSb/Si) and different crystal structures between InSb and Si.The thesis focuses on the integration of InSb with Si using solid-state molecular beam epitaxy (MBE) system. First, interfacial misfit (IMF) array was intentionally formed at the InSb/GaAs interface to accommodate the lattice mismatch via surface anion exchange. The relationship between the growth temperature and the formation of IMF was investigated. Transmission electron microscope (TEM) images of the sample grown at 310 °C demonstrated an IMF array consisting of 90° misfit dislocations distributed uniformly along the interface and their separation (3.2 nm) agreed well with the calculated result. Growth temperature above 310 °C suppressed the surface anion exchange to impede the formation of IMF array. Below 310 °C, island coalescences resulted in the formation of threading dislocations.Further optimization of growth process has been focused on two areas: 1) pre-growth Sb reconstructions; and 2) in situ thermal annealing. Sb atoms have three kinds of reconstruction on GaAs surface and III-Sb (GaSb and InSb) layers grew on GaAs with different pre-growth Sb reconstructions. Our simulation demonstrated that the x-ray reciprocal space map (RSM) can be employed to characterize the distribution of misfit Summary viii dislocations in the IMF array. The results of RSM showed pre-growth (2×8) Sb reconstruction promoted the formation of 90° misfit dislocations in an IMF array. The highest carrier mobility of III-Sb layers was achieved in the III-Sb layers grown on GaAs with pre-growth (2×8) Sb reconstruction. The optimized anneal process was 5 minutes at 590 °C for GaSb and 15 minutes at 420 °C for InSb, respectively. Compared with asgrown III-Sb layers, the lower density of threading dislocations, flatter surface and higher carrier mobility were observed in the annealed samples. We confirmed that the annealing also improved the photoresponsivity of GaSb and InSb photoconductors grown on GaAs.To realize the integration of InSb on Si, GaAs buffer was grown on Ge-on-Si substrates with 6° offcut followed by InSb grown on GaAs via IMF array. An InSb p-i-n photodetector was developed based on this structure. An electron barrier layer was inserted into the conventional architecture of p-i-n photodetector to suppress the dark current. The electrical and optical properties of the photodetector were investigated. The photodetector owned a cutoff wavelength of about 5.3 μm at 80 K and the cutoff wavelength was found to increase with increasing temperature. The 80 K det...

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Characterization of molecular beam epitaxially grown InSb layers and diode structures

Cited by 18 publications

References 21 publications

Monolithic Integration of InSb Photodetector on Silicon for Mid-Infrared Silicon Photonics

Monolithic Integration of InSb Photodetector on Silicon for Mid-Infrared Silicon Photonics

Effects of buffer layers on the structural and electronic properties of InSb films

Highly lattice-mismatched epitaxy for III-V/Si integration

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