As the core microorganism of wine making, Saccharomyces cerevisiae encounter low pH stress at the beginning of fermentation. Effect of initial pH (4.50, 3.00, 2.75, 2.50) on growth and fermentation performance of 3 S. cerevisiae strains Freddo, BH8, Nº.7303, different tolerance at low pH, chosen from 12 strains, was studied. The values of yeast growth (OD600 , colony forming units, cell dry weight), fermentation efficiency (accumulated mass loss, change of total sugar concentration), and fermentation products (ethanol, glycerol, acetic acid, and l-succinic acid) at different pH stress were measured. The results showed that the initial pH of must was a vital factor influencing yeast growth and alcoholic fermentation. Among the 3 strains, strain Freddo and BH8 were more tolerant than Nº.7303, so they were affected slighter than the latter. Among the 4 pH values, all the 3 strains showed adaptation even at pH 2.50; pH 2.75 and 2.50 had more vital effect on yeast growth and fermentation products in contrast with pH 4.50 and 3.00. In general, low initial pH showed the properties of prolonging yeast lag phase, affecting accumulated mass loss, changing the consumption rate of total sugar, increasing final content of acetic acid and glycerol, and decreasing final content of ethanol and l- succinic acid, except some special cases. Based on this study, the effect of low pH on wine products would be better understood and the tolerance mechanism of low pH of S. cerevisiae could be better explored in future.

At high levels, copper in grape mash can inhibit yeast activity and cause stuck fermentations. Wine yeast has limited tolerance of copper and can reduce copper levels in wine during fermentation. This study aimed to understand copper tolerance of wine yeast and establish the mechanism by which yeast decreases copper in the must during fermentation. Three strains of Saccharomyces cerevisiae (lab selected strain BH8 and industrial strains AWRI R2 and Freddo) and a simple model fermentation system containing 0 to 1.50 mM Cu2+ were used. ICP-AES determined Cu ion concentration in the must decreasing differently by strains and initial copper levels during fermentation. Fermentation performance was heavily inhibited under copper stress, paralleled a decrease in viable cell numbers. Strain BH8 showed higher copper-tolerance than strain AWRI R2 and higher adsorption than Freddo. Yeast cell surface depression and intracellular structure deformation after copper treatment were observed by scanning electron microscopy and transmission electron microscopy; electronic differential system detected higher surface Cu and no intracellular Cu on 1.50 mM copper treated yeast cells. It is most probably that surface adsorption dominated the biosorption process of Cu2+ for strain BH8, with saturation being accomplished in 24 h. This study demonstrated that Saccharomyces cerevisiae strain BH8 has good tolerance and adsorption of Cu, and reduces Cu2+ concentrations during fermentation in simple model system mainly through surface adsorption. The results indicate that the strain selected from China’s stress-tolerant wine grape is copper tolerant and can reduce copper in must when fermenting in a copper rich simple model system, and provided information for studies on mechanisms of heavy metal stress.

Batch fermentation by Streptomyces pristinaespiralis with the addition of adsorbent resins was used to increase the production of pristinamycin. In consideration of the adsorption capacity and the desorption ability, a polymeric resin, JD-1, was finally selected. The maximum production of pristinamycin in Erlenmeyer flasks went up to 1.13 from 0.4 g l(-1), by adding 12% (w/v) resin JD-1 into the culture broth at 20 h after inoculation. In a 3 l bioreactor, pristinamycin fermentation with the addition of 12% (w/v) resin JD-1 at 20 h after inoculation reached 0.8 g l(-1), which was a 1.25-fold increase over fermentation without resin.

The InSb photodetector on a Si substrate acts a signal receiver for the mid-infrared silicon photonics application to overcome the limitation of group IV semiconductors.In this paper, we demonstrated an InSb p-i-n photodetector with an InAlSb barrier layer grown on (100) silicon substrates via a GaAs/Ge buffer by molecular beam epitaxy. The lattice mismatch between InSb and GaAs was accommodated by an interfacial misfit (IMF) array. The 50% cutoff detectable wavelength of this detector increased from 5.7 µm at 80 K to 6.3 µm at 200 K. An 80 K detectivity of 8.8×10 9 cmHz 1/2 W -1 at 5.3 µm was achieved with a quantum efficiency of 16.3%. The dark current generating mechanism of this detector is both generation-recombination and surface leakage above 140 K, while it is only surface leakage from 120 K to 40 K.