2006
DOI: 10.1016/j.spmi.2005.08.070
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Characterization of n-ZnO/p-Si films grown by magnetron sputtering

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Cited by 78 publications
(32 citation statements)
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“…The barrier height φ B at a temperature of T can be determined from I 0 = A*ST 2 exp(−φ B /k B T), where S is the surface area of the diode, k B is the Boltzman constant, and A* is the Richardson constant. 18 Since we cannot avoid the presence of a thin native SiO x between the AZO layer and the Si substrate, the extracted φ B will be erroneous due to the active participation of AZO/SiO x and SiO x /Si interfaces, especially for thin AZO layers with thicknesses below 70 nm [see the reverse current profiles in Figure 5(a)]. This is because of incorporation of a large amount of defects between the AZO/SiO x and SiO x /Si interfaces which as a result can contribute in charge transfer process between the AZO film and the Si substrate.…”
Section: -7mentioning
confidence: 99%
See 1 more Smart Citation
“…The barrier height φ B at a temperature of T can be determined from I 0 = A*ST 2 exp(−φ B /k B T), where S is the surface area of the diode, k B is the Boltzman constant, and A* is the Richardson constant. 18 Since we cannot avoid the presence of a thin native SiO x between the AZO layer and the Si substrate, the extracted φ B will be erroneous due to the active participation of AZO/SiO x and SiO x /Si interfaces, especially for thin AZO layers with thicknesses below 70 nm [see the reverse current profiles in Figure 5(a)]. This is because of incorporation of a large amount of defects between the AZO/SiO x and SiO x /Si interfaces which as a result can contribute in charge transfer process between the AZO film and the Si substrate.…”
Section: -7mentioning
confidence: 99%
“…For applied voltage V k BT /q and N A N D , the capacitance per unit area can be written as 1/C 2 = 2(V bi −V)/qε s N D where the N A and N D are the donor density in n-AZO and the acceptor density in p-Si, respectively; V bi is the built-in potential within Si, and ε s is the Si permittivity. 18 Using 1/C 2 -V plot ( Figure 6, shown for S1 and S3 for clarity) the extrapolated straight line intercept of 1/C 2 on V axis is the measure of φ B . 21 The AZO film thickness dependent change in φ B is displayed in the inset of Figure 6, showing a systematic decrease in φ B from 0.9 to 0.3 V with increasing thickness up to 175 nm.…”
Section: -7mentioning
confidence: 99%
“…Here, ε s is the permittivity of ZnO (≈8.5), ε 0 is the dielectric constant of vacuum, S the junction area, V is the reverse-bias voltage, and N d is the concentration of ionized donors in the depleted region which is found from dierential capacitance voltage form such as [27]) who concluded that ZnO/Si structures deposited by RF magnetron sputtering in a wider substrate temperature range between 25400…”
Section: Electrical Characteristicsmentioning
confidence: 99%
“…Because of these excellent properties, Zinc oxide is used applications such as solar cells, biosensors, gas sensors, optoelectronic devices, transducers [2][3][4][5], liquid crystals display, light emitting diodes [6], visible light and UV photo-detectors [7,8]. ZnO layers have been grown by using different deposition techniques such as sol-gel, spin coating method [9], reactive evaporation [10], chemical vapor deposition (CVD) [11], magnetron sputtering [12], and atomic layer deposition (ALD) [13]. In the recent years, there has remarkable interest to deposit ZnO thin films using atomic layer deposition.…”
Section: Introductionmentioning
confidence: 99%