2013
DOI: 10.1063/1.4823480
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Effect of grain-boundaries on electrical properties of n-ZnO:Al/p-Si heterojunction diodes

Abstract: We report on room temperature diode characteristics of ZnO:Al (AZO)/Si heterostructures by current-voltage measurements. In this study, with increasing AZO film thickness, systematic reduction in the turn-on potential (from 3.16 to 1.80 V) and the film stress are observed. Complementary capacitance-voltage studies reveal a decreasing trend in barrier height at the junction with increasing AZO film thickness. A gradual decrease in resistivity takes place with increasing AZO film thickness. Above observations ar… Show more

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Cited by 43 publications
(29 citation statements)
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“…40,41 The ideality factor (n) of the present diode has been found to be $1.46. The n value indicates that the present diode is not an ideal Schottky barrier diode; instead it is a MIS-type diode.…”
Section: I-v Characteristicsmentioning
confidence: 96%
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“…40,41 The ideality factor (n) of the present diode has been found to be $1.46. The n value indicates that the present diode is not an ideal Schottky barrier diode; instead it is a MIS-type diode.…”
Section: I-v Characteristicsmentioning
confidence: 96%
“…Ideality factor (n), and the reverse saturation current (I o ) controls the I-V characteristics of a device in the exponential region. 41 In fact, the Ag/C 60 -ZnTANP/SiO x /p-Si/Ag structure has four interfaces: (i) Ag-C 60 -ZnTANP, (ii) C 60 -ZnTANP-SiO x , (iii) SiO x -p-Si, and (iv) p-Si-Ag. The electrical properties of heterostructure (Ag/C 60 -ZnTANP/SiO x /p-Si/Ag) diodes are solely dependent on the interface.…”
Section: I-v Characteristicsmentioning
confidence: 98%
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“…1 In most of these applications, the performance of AZO-based devices is strongly governed by the carrier density which not only depends on the aluminum doping level but also on the presence of local defects in AZO films. [1][2][3] In addition, statistical distribution of grain size, carrier density, and defects can vary from grain-to-grain which in turn gives rise to a local variation in the conductivity. 4 Thus, for a better realization of TCO properties, it is necessary not only to understand the bulk but also the nanoscale (local) electrical transport properties of AZO thin films, which are considered to be quite challenging.…”
mentioning
confidence: 99%
“…The deposition was carried out at an optimized angle of 50 with respect to the target normal. 3 The crystallinity study and phase identification of AZO films were performed by x-ray diffraction (XRD) (Bruker, D8-Discover) in Bragg-Brentano geometry, using the Cu-Ka radiation (k ¼ 0.1542 nm). Field emission gun scanning electron microscope (CarlZeiss, Germany)-based energy dispersive x-ray (EDX) spectrometric analysis was performed for compositional analysis of the films.…”
mentioning
confidence: 99%