Characterization of nanocrystalline nickel oxide thin films prepared at different thermal oxidation temperatures

Hajakbari, Fatemeh

doi:10.1007/s40097-020-00332-2

Cited by 30 publications

(16 citation statements)

References 30 publications

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“…As shown in Figure 2 , the asymmetric Ni 2p 3/2 and Ni 2p 1/2 doublet cannot be detected within the detection limit, suggesting the absence of the metallic nickel in all the NiO x samples. 26 The characteristic multiplet splitting of the main Ni 2p 3/2 peak reveals that the NiO x is not only composed of Ni 2+ ions but also a significant amount of Ni 3+ ions. Ni 3+ possibly comes from two species of Ni 2 O 3 and NiOOH.…”

Section: Resultsmentioning

confidence: 96%

Heterostructure Silicon Solar Cells with Enhanced Power Conversion Efficiency Based on Si_x/Ni³⁺ Self-Doped NiO_x Passivating Contact

et al. 2022

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Developing efficient crystalline silicon/wide-band gap metal-oxide thin-film heterostructure junction-based crystalline silicon ( c -Si) solar cells has been an attractive alternative to the silicon thin film-based counterparts. Herein, nickel oxide thin films are introduced as the hole-selective layer for c -Si solar cells and prepared using the reactive sputtering technique with the target of metallic nickel. An optimal Ni 3+ self-doped NiO x film is obtained by tuning the reactive oxygen atmosphere to construct the optimized c -Si/NiO x heterostructure band alignment. A thin SiO x interlayer was further introduced to reduce the defect of the c -Si/NiO x interface with the UV–ozone (UVO) treatment. The constructed p -type c -Si/SiO x /NiO x /Ag solar cell exhibits an increase in the open voltage from 586 to 611 mV and achieves a 19.2% conversion efficiency.

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Section: Resultsmentioning

confidence: 96%

Heterostructure Silicon Solar Cells with Enhanced Power Conversion Efficiency Based on Si_x/Ni³⁺ Self-Doped NiO_x Passivating Contact

et al. 2022

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“…CuO was grown on glass substrates using the above procedure [ 36 ]. NiO thin films were grown using thermal oxidation, and Ni metal was deposited using magnetron sputtering on quartz substrates at ambient conditions [ 37 ].…”

Section: Synthesis Of P-type Mox Thin Filmsmentioning

confidence: 99%

“…Concerning NiO, its thermal oxidation was investigated by varying the annealing temperature [ 37 ], and a full oxidation of NiO was achieved at temperatures above 500 °C, with improved NiO crystallinity by further increasing the oxidation temperature. Full oxidation can be reached at 700 °C [ 37 ]. Similar to CuO, increasing the annealing accelerates the diffusion of Ni ions from the buffer layer into the NiO layer.…”

Section: Synthesis Of P-type Mox Thin Filmsmentioning

confidence: 99%

P-Type Metal Oxide Semiconductor Thin Films: Synthesis and Chemical Sensor Applications

Moumen

Kumarage

Comini

2022

Sensors

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This review focuses on the synthesis of p-type metal-oxide (p-type MOX) semiconductor thin films, such as CuO, NiO, Co3O4, and Cr2O3, used for chemical-sensing applications. P-type MOX thin films exhibit several advantages over n-type MOX, including a higher catalytic effect, low humidity dependence, and improved recovery speed. However, the sensing performance of CuO, NiO, Co3O4, and Cr2O3 thin films is strongly related to the intrinsic physicochemical properties of the material and the thickness of these MOX thin films. The latter is heavily dependent on synthesis techniques. Many techniques used for growing p-MOX thin films are reviewed herein. Physical vapor-deposition techniques (PVD), such as magnetron sputtering, thermal evaporation, thermal oxidation, and molecular-beam epitaxial (MBE) growth were investigated, along with chemical vapor deposition (CVD). Liquid-phase routes, including sol–gel-assisted dip-and-spin coating, spray pyrolysis, and electrodeposition, are also discussed. A review of each technique, as well as factors that affect the physicochemical properties of p-type MOX thin films, such as morphology, crystallinity, defects, and grain size, is presented. The sensing mechanism describing the surface reaction of gases with MOX is also discussed. The sensing characteristics of CuO, NiO, Co3O4, and Cr2O3 thin films, including their response, sensor kinetics, stability, selectivity, and repeatability are reviewed. Different chemical compounds, including reducing gases (such as volatile organic compounds (VOCs), H2, and NH3) and oxidizing gases, such as CO2, NO2, and O3, were analyzed. Bulk doping, surface decoration, and heterostructures are some of the strategies for improving the sensing capabilities of the suggested pristine p-type MOX thin films. Future trends to overcome the challenges of p-type MOX thin-film chemical sensors are also presented.

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“…NiO made up most of the phase leading to the high quantity while the minority of the phase was Ce0.8Gd0.2O2 and CeO2. NiO acts as an excellent catalyst for oxygen activation, while producing high electrical conductivity with GDC20 and mainly reacting as a matrix to support the catalyst and prohibit the Ni element from agglomeration with operating conditions (Ding et al 2009;Hajakbari et al 2020). Table 2 shows the thermal expansion comparison between the 50 wt% BYCF + 50 wt% GDC20 cathode, GDC20 electrolyte, and 60 wt% NiO + 40wt% GDC20 anode in the temperature ranges of 40 to 200 °C, 40 to 400 °C, 40 to 600 °C, and 40 to 800 °C.…”

Section: T[(tan)max]h = Exp (-Eo/kbt)mentioning

confidence: 99%

Analysis of electric signals from micro-solid oxide fuel cell sensors detecting methane biogas

Ninwijit

Palamnit

Luengchavanon

et al. 2021

BioRes

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Micro-solid oxide fuel cells (SOFC) sensors prepared via depositing a thin film BYCF (10 wt% [Ba0.95FeY0.05O2.8] + 90 wt% [Co2O3]) – GDC20 (Gd0.20Ce0.80O1.95) cathode and NiO-GDC20 (Gd0.20Ce0.80O1.95) anode on a GDC20 electrolyte layer were operated at 800 °C. The structure, which receives only biogas, was formed into 15-mm pellets with only one side for detecting methane (CH4). The detection of 40% to 99.99% CH4 provided a high level of accuracy compared with 10% to 30% CH4. The biogas (60% CH4) from the Oil Palm Industry and Rubber Cooperative Fund, Thailand, increased remarkably at voltage levels of 20 to 21 mV. The electrical signal from the micro-SOFC sensor corresponded to the quantity of CH4, with the chemical reaction of the dry reforming activities (NiO and Co3O4) highly catalyzed and transformed from CH4 to H2, thus generating electrons. It was concluded that the micro-SOFC sensor is suitable for detecting methane measurements at intermediate temperatures, with the ceramic structure offering low degradation compared with metal sensors.

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Characterization of nanocrystalline nickel oxide thin films prepared at different thermal oxidation temperatures

Cited by 30 publications

References 30 publications

Heterostructure Silicon Solar Cells with Enhanced Power Conversion Efficiency Based on Si_x/Ni³⁺ Self-Doped NiO_x Passivating Contact

Heterostructure Silicon Solar Cells with Enhanced Power Conversion Efficiency Based on Si_x/Ni³⁺ Self-Doped NiO_x Passivating Contact

P-Type Metal Oxide Semiconductor Thin Films: Synthesis and Chemical Sensor Applications

Analysis of electric signals from micro-solid oxide fuel cell sensors detecting methane biogas

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Characterization of nanocrystalline nickel oxide thin films prepared at different thermal oxidation temperatures

Cited by 30 publications

References 30 publications

Heterostructure Silicon Solar Cells with Enhanced Power Conversion Efficiency Based on Six/Ni3+ Self-Doped NiOx Passivating Contact

Heterostructure Silicon Solar Cells with Enhanced Power Conversion Efficiency Based on Six/Ni3+ Self-Doped NiOx Passivating Contact

P-Type Metal Oxide Semiconductor Thin Films: Synthesis and Chemical Sensor Applications

Analysis of electric signals from micro-solid oxide fuel cell sensors detecting methane biogas

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Product

Resources

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Heterostructure Silicon Solar Cells with Enhanced Power Conversion Efficiency Based on Si_x/Ni³⁺ Self-Doped NiO_x Passivating Contact

Heterostructure Silicon Solar Cells with Enhanced Power Conversion Efficiency Based on Si_x/Ni³⁺ Self-Doped NiO_x Passivating Contact