Characterization of Nd: LaVO₄ single-crystal scintillator emitting near-infrared photons

Abstract

Nd: LaVO4 single crystals were prepared and were evaluated for their photoluminescence (PL) and radioluminescence properties. The 0.1% Nd-doped LaVO4 single crystals showed the highest PL quantum yield (36.3%) of all the samples. Regarding the scintillation properties, the Nd-doped samples showed scintillation peaks at around 900, 1060, and 1320 nm owing to the electronic transition of Nd3+. In addition, we estimated the correlation between the scintillation signal intensity and the exposure dose rate of the X-ray in the spectral range from 900 nm through 1600 nm. Among all the samples, the 3.0% Nd-doped sample had the highest sensitivity.

Visible–Near Infrared Scintillation Properties of Er-Doped Bi4Si3O12 Single Crystals

“…Therefore, the optimal Er concentration for the Er-doped BSO NIR emitting scintillator was 2.0%. Comparing with the performance of other NIR emitting scintillators, the lower detection limit of Er-doped samples was the same value with that of Er-doped BGO, 36 Pr-doped BGO, 39 and Nd-doped LaVO 4 40 in the same setup. However, since the Z eff of BGO and LaVO 4 is 75.2 and 49.1, respectively, Er-doped BSO was considered to superior as NIR-emitting scintillator in terms of absorption efficiency of ionizing radiation.…”

Radiation-induced Luminescence Properties of Tm-doped Bi4Ge3O12 Single Crystals

“…The interaction cross section for X-and γ-rays is proportional to ρZ eff 4 , (24) where ρ and Z eff are, respectively, the density and effective atomic number. NIR scintillators with a high ρ and large Z eff have been developed (25,26) as well as UV-visible scintillators. (27,28) Hence, Bi 4 Ge 3 O 12 (BGO) having a high ρ (7.13 g/cm 3 ) and large Z eff (75) is a candidate host material for NIR scintillators.…”

Copper iodide semiconductor: a non-hygroscopic, bright red-emitting scintillator for X-ray and gamma-ray detection

“…Over the past few years, red and near-infrared emitting compounds have shown great potential as next-generation scintillators. For instance, rare-earth-doped garnet, 11,12) perovskite, [13][14][15] vanadate, [16][17][18][19] and other compounds 20,21) show an efficient near-infrared scintillation (800-1200 nm) and good dose response linearity with a large dynamic range for high dose monitoring applications. The near-infrared emission is owing to 4f-4f electron transitions in trivalent rare-earth ions, which is detectable by InGaAs-based detectors.…”