Characterization of NiCo composite silicides by 10 nm-Ni50Co50 alloy films with additional annealing

Song, Ohsung; Yoon, Kijeong; Kim, Sang-Yeob

doi:10.1007/s12540-009-0285-3

Cited by 2 publications

(4 citation statements)

References 12 publications

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“…• C. One article, 41 however, reported the silicidation of Ni 50 Co 50 films. While a much thinner film, 10 nm, and a much higher temperature, 700 to 1100…”

Section: Resultsmentioning

confidence: 99%

“…The silicidation of CoNi alloys has been previously studied for applications in CMOS contacts. 21,24,[37][38][39][40][41][42][43][44] Although the interest was later shifted to the nickel monosilicide for that application, the ternary silicide was then of interest as alternative to CoSi 2 because the addition of Ni improves the nucleation of Co disilicide and reduces the silicide roughness and Si consumption. Therefore, not only all those studies 21,24,[37][38][39][40][41][42][43][44] were based on vacuum deposited extremely thin films but also most of them focused on the disilicide formation from Co rich alloys at high temperatures above 500 • C. One article, 41 however, reported the silicidation of Ni 50 Co 50 films.…”

Section: Resultsmentioning

confidence: 99%

“…21,24,[37][38][39][40][41][42][43][44] Although the interest was later shifted to the nickel monosilicide for that application, the ternary silicide was then of interest as alternative to CoSi 2 because the addition of Ni improves the nucleation of Co disilicide and reduces the silicide roughness and Si consumption. Therefore, not only all those studies 21,24,[37][38][39][40][41][42][43][44] were based on vacuum deposited extremely thin films but also most of them focused on the disilicide formation from Co rich alloys at high temperatures above 500 • C. One article, 41 however, reported the silicidation of Ni 50 Co 50 films. While a much thinner film, 10 nm, and a much higher temperature, 700 to 1100 • C, were used, the Ni concentration peak was found slightly deeper than Co, consistent with the observation in Figure 3.…”

Section: Resultsmentioning

confidence: 99%

See 2 more Smart Citations

A Study on the Electrodeposition and Silicidation of Nickel-Cobalt Alloys for Silicon Photovoltaic Cell Metallization

Huang¹

2015

ECS J. Solid State Sci. Technol.

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Metallization of silicon solar cells using electroplating is of interest recently as a cheaper replacement of silver screen printing. Light assisted electroplating of Nickel-Cobalt (NiCo) alloys were studied on crystalline silicon (Si) solar cells in this paper. The effect of illumination was investigated in conjunction with the light absorption properties of the plating solution, emission spectrum of the light source as well as the plating current. A solution dependent threshold light intensity was observed, beyond which the solar cells were under reverse bias during electroplating. The detailed compositional depth profiles of the silicide layer were studied along the silicidation reaction using microscopic energy dispersive X-ray spectrum (EDS). A significant improvement in the performance degradation at high temperature thermal stress was observed for solar cells metalized with the ternary silicide. The cost of solar energy compared with fossil fuel is one of the key determining parameters in its adoption by the market. Therefore, ways of saving the manufacturing cost of silicon solar cells are of great interest. The current manufacturing process involves a screenprinting process to metalize the front side with silver paste. While the screen-printing process has been integrated into the process flow with standard tooling, it typically suffers from conversion loss due to the low conductivity of the paste and low line height-width aspect ratio. In addition, the high price of silver potentially limits the cost reduction of the solar cell.Replacing the screen-printed Ag with electroplated high aspect ratio Cu grids has been proposed decades ago.1,2 This method has recently gained more attention due to the high price of Ag and the easy integration of Cu electroplating with laser patterning. The selective emitter formed by the in-situ doping during laser patterning 3-5 further eases the process control for metallization and has the potential to improve the conversion efficiency of the solar cell.Different Cu metallization schemes involving electroplating have been reported. [6][7][8][9][10][11][12][13][14][15][16][17] Most of these schemes involve the formation of Ni silicide either from electroless or electrolytic deposited Ni. [8][9][10][11][12][15][16][17] The electrolytic deposition process in these reports typically involves light, so called light induced or light assisted electrodeposition. The formation of silicide lowers the contact resistance between the metal and Si 18 and thus improves the solar cell performance. Ni and Co silicidation has been extensively studied for the application in complementary metal oxide semiconductor (CMOS) contacts.18-23 The Ni silicidation starts at as low as 300• C for metal rich phases, followed by monosilicide phases around 400• C and silicon rich phases above 800• C. 18 Co silicidation follows a similar phase evolution but at a higher temperature. 24 While the low resistive Co disilicide was originally used in CMOS it suffers from poor nucleation rate and interface roughne...

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“…• C. One article, 41 however, reported the silicidation of Ni 50 Co 50 films. While a much thinner film, 10 nm, and a much higher temperature, 700 to 1100…”

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

A Study on the Electrodeposition and Silicidation of Nickel-Cobalt Alloys for Silicon Photovoltaic Cell Metallization

Huang¹

2015

ECS J. Solid State Sci. Technol.

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“…12 Previous reports have proven that Ni 0.9 Co 0.1 thin films or Ni 0.5 Co 0.5 interlayers have the merit to improve the electrical and thermal properties. 13,14 In this report, a Ni 90 Co 10 alloy was employed in the formation of metal silicide and germanosilicide as the contact layer for Si and SiGe. The resistivity and structure evolution of NiCo silicide and germanosilicide were investigated, as well as the counterparts of Ni and NiPt.…”

Section: Introductionmentioning

confidence: 99%

A novel silicide and germanosilicide by NiCo alloy for Si and SiGe source/drain contact with improved thermal stability

Cheng

Hsin

2014

CrystEngComm

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NiCo (10 at.% of Co) alloy was employed in the formation of metal silicide and germanosilicide as the contact layer which can be used as future complementary metal-oxide-semiconductor source/drain contact. The resistivity and structure evolution of NiCo silicide and germanosilicide were investigated, and the performance of the NiCo silicide is better than conventional NiSi and comparable with NiPt silicides, as well as NiPt germanosilicide below 700°C. The thermal stability and enhanced sheet resistance of NiCo silicide and germanosilicide were found to be up to 900°C and 700°C, respectively. The low sheet resistance at high temperature was attributed to the low-temperature CoSi by enhancing the thermal stability and uniformity of the Ge. The influence of Ge concentration was studied in different Si 1−x Ge x substrates, and the low sheet resistance can be reliable up to 650°C.

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Characterization of NiCo composite silicides by 10 nm-Ni50Co50 alloy films with additional annealing

Cited by 2 publications

References 12 publications

A Study on the Electrodeposition and Silicidation of Nickel-Cobalt Alloys for Silicon Photovoltaic Cell Metallization

A Study on the Electrodeposition and Silicidation of Nickel-Cobalt Alloys for Silicon Photovoltaic Cell Metallization

A novel silicide and germanosilicide by NiCo alloy for Si and SiGe source/drain contact with improved thermal stability

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