Characterization of octahedral Cu2O nanostructures grown on porous silicon by electrochemical deposition

Çetinel, Alper

doi:10.1016/j.matchemphys.2021.125532

Cited by 14 publications

(15 citation statements)

References 46 publications

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“…As seen in Figure , the peaks at 2θ of 29.59°, 36.45°, 42.34°, 61.66°, 73.55°, and 77.41° represent (110), (111), (200), (220), (311), and (222), respectively, corresponding the standard card of Cu 2 O (JCPDS card No. 01-078-2076). , Besides the Cu 2 O XRD pattern, the peaks detected at 2θ values of 33.0°, 54.5°, 61.7°, 67.0°, 69.7°, and 75.4° match the (200), (110), (320), (302), (400), and (331) directions of the silicon substrate, respectively. ,, Apart from Cu 2 O and Si, weak peaks at 2θ = 43.4° and 50.4° are known as (111) and (200) planes of metallic Cu. , It should be noted that the amount of OH – in the solution may affect the metallic copper formation in the structure . According to XRD analysis, Cu 2 O nanostructures are generally polycrystalline, cubic, and preferentially oriented along the plane of (111) for 10 min.…”

Section: Resultsmentioning

confidence: 99%

“…Table indicates that when the current density increases, the average size of Cu 2 O crystallite declines. According to Çetinel and Ribic-Zelenovic et al, the increase in lattice strain and nucleation sites causes the decrease in the size of the crystallite. They pointed out that the increase in the current/voltage reduces the crucial radius of the nucleus and the number of atoms that make up the nucleus, leading to faster nucleation and the creation of smaller crystals. , …”

Section: Resultsmentioning

confidence: 99%

“…PSi layer was derived via anodization technique by using n-type silicon wafer with orientation of (100) and resistivity of 1–10 Ω cm as defined in recent works. ,, Sigma Aldrich supplied all of the chemicals utilized in this study. Two-step deposition was performed to obtain PSi/Cu 2 O/ZnO nanostructures.…”

Section: Methodsmentioning

confidence: 99%

“…Moreover, it provides the ability to tailor the size, shape, and morphology of the nanostructures deposited under a set of well-controlled synthesis parameters. Controlling the size and shape of the nanostructures is technologically crucial due to the close correlation between these parameters and optical, electrical, and catalytic features. , The most important problem in Cu 2 O/ZnO-based device applications is interface defects. , In addition, obtaining high junction quality and low defect density is also a major challenge, so the experimental parameters must be well chosen. Fabricating good quality p-type ZnO semiconductor material is challenging due to oxygen vacancy and zinc interstitials in pure ZnO .…”

Section: Introductionmentioning

confidence: 99%

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Preparation and Characterization of Electrochemically Deposited Cu₂O/ZnO Heterojunctions on Porous Silicon

Çetinel

Utlu

2023

ACS Omega

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Cu2O/ZnO heterojunction was fabricated on porous silicon (PSi) by a two-step electrochemical deposition technique with changing current densities and deposition times, and then the PSi/Cu2O/ZnO nanostructure was systematically investigated. SEM investigation revealed that the morphologies of the ZnO nanostructures were significantly affected by the applied current density but not those of Cu2O nanostructures. It was observed that with the increase of current density from 0.1 to 0.9 mA/cm2, ZnO nanoparticles showed more intense deposition on the surface. In addition, when the deposition time increased from 10 to 80 min, at a constant current density, an intense ZnO accumulation occured on Cu2O structures. XRD analysis showed that both the polycrystallinity and the preferential orientation of ZnO nanostructures change with the deposition time. XRD analysis also revealed that Cu2O nanostructures are mostly in the polycrystalline structure. Several strong Cu2O peaks were observed for less deposition times, but those peaks diminish with increasing deposition time due to ZnO contents. According to XPS analysis, extending the deposition time from 10 to 80 min, the intensity of the Zn peaks increases, whereas the intensity of the Cu peaks decreases, which is verified by the XRD and SEM investigations. It was found from the I–V analysis that the PSi/Cu2O/ZnO samples exhibited rectifying junction and acted as a characteristical p-n heterojunction. Among the chosen experimental parameters, PSi/Cu2O/ZnO samples obtained at 0.5 mA current density and 80 min deposition times have the best junction quality and defect density.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Preparation and Characterization of Electrochemically Deposited Cu₂O/ZnO Heterojunctions on Porous Silicon

Çetinel

Utlu

2023

ACS Omega

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“…Porous silicon (PSi) has now proven to have a lot of potential in biosensors and biomedicine 23 – 31 . PSi has a high surface area and abundant pore structures, which can be used as a good adsorbent 32 .…”

Section: Introductionmentioning

confidence: 99%

Refractive index sensor with magnified resonant signal

Zaky

Alamri

Жакетов

et al. 2022

Sci Rep

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Herein, we theoretically suggest one-dimensional photonic crystal composed of polymer doped with quantum dots and porous silicon. The present simulated design is proposed as a refractive index biosensor structure based on parity-time symmetry. Under the parity-time conditions, the transmittance of the resonant peaks is magnified to be 57,843% for refractive index 1.350, 2725% for 1.390, 2117% for 1.392, 1502% for 1.395, 1011% for 1.399, and 847% for 1.401. By magnification, we can distinguish between different refractive indices. The present design can record an efficiency twice the published designs as clear in the comparison table. Results clear that the sensitivities are 635 nm/RIU and 1,000,000%/RIU. So, it can be used for a broader range of detection purposes.

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The Effect of Concentration of Aluminum on Structural, Optical, and Electrical Properties of Aluminum‐doped ZnO Nanostructures Electrochemically Deposited on Polyimide

Çetinel,

Burgaz

2024

ChemistrySelect

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Aluminum‐doped ZnO (AZO) were successfully prepared on polyimide (PI) film using electrochemical deposition. Field emission scanning electron microscopy (FESEM) analysis revealed that as the aluminum concentration increased, the morphology of AZO nanostructures changed from pellets to nanorods. X‐ray photoelectron spectrometry (XPS) was employed to study the chemical states of undoped and Al‐doped ZnO on a polyimide substrate. The X‐ray diffraction (XRD) patterns of the PI/AZO nanostructures showed a polycrystalline wurtzite structure with a crystallographic orientation along the (002) plane. The XRD analysis also indicated that the average crystallite size decreased from 50.5 nm to 31.0 nm with increasing aluminum concentration (from 0.05 mM to 10 mM). Transmittance analysis revealed that with increasing aluminum concentration, the average optical transmittance in the visible region decreased from 90 % to 75 %. The aluminum concentration has a significant effect on the electrical properties of the samples, as shown by current‐voltage (I–V) and Hall measurements. Among the samples, the AZO/PI film prepared with 5 mM aluminum concentration exhibited the minimum electrical resistivity (4.14×10−2 Ω.cm), the highest carrier density (1.10×1021 cm−3) and the Hall mobility (5.40 cm2 V−1 s−1). We also discuss the possible mechanisms underlying these results compared to undoped ZnO films. This study contributes to the potential applications in flexible electronics and optoelectronics by demonstrating the tunability of AZO nanostructures on a flexible polyimide substrate through controlled aluminum doping.

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Characterization of octahedral Cu2O nanostructures grown on porous silicon by electrochemical deposition

Cited by 14 publications

References 46 publications

Preparation and Characterization of Electrochemically Deposited Cu₂O/ZnO Heterojunctions on Porous Silicon

Preparation and Characterization of Electrochemically Deposited Cu₂O/ZnO Heterojunctions on Porous Silicon

Refractive index sensor with magnified resonant signal

The Effect of Concentration of Aluminum on Structural, Optical, and Electrical Properties of Aluminum‐doped ZnO Nanostructures Electrochemically Deposited on Polyimide

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Characterization of octahedral Cu2O nanostructures grown on porous silicon by electrochemical deposition

Cited by 14 publications

References 46 publications

Preparation and Characterization of Electrochemically Deposited Cu2O/ZnO Heterojunctions on Porous Silicon

Preparation and Characterization of Electrochemically Deposited Cu2O/ZnO Heterojunctions on Porous Silicon

Refractive index sensor with magnified resonant signal

The Effect of Concentration of Aluminum on Structural, Optical, and Electrical Properties of Aluminum‐doped ZnO Nanostructures Electrochemically Deposited on Polyimide

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Preparation and Characterization of Electrochemically Deposited Cu₂O/ZnO Heterojunctions on Porous Silicon

Preparation and Characterization of Electrochemically Deposited Cu₂O/ZnO Heterojunctions on Porous Silicon