Characterization of oxide layers on GaAs substrates

Analysis of mechanism of carbon removal from GaAs(100) surface by atomic hydrogen

“…As expected, since the EPI-ready term has been originally coined for samples with a special surface preparation procedure [21], the EPI sample shows the lowest content of carbon impurities. Accordingly, it is not surprising that from the degreased R1 sample the carbon can be removed faster than in the case of the non-degreased R2, R3, and R4 samples.…”

“…In the experiments two types of (1 0 0) oriented n-type GaAs wafers were used, one real obtained by standard cut and one epiready delivered by AXT [21]. After the standard degreasing in acetone, methanol and rinsing in deionized water, one of the real type samples, which will hereafter be called R1, and one of the epiready type samples, which will hereafter be called EPI, were transferred into the ultra high-vacuum system (UHV), operating at the base pressure of 10 À8 Pa, without any other treatments.…”

Monitoring epiready semiconductor wafers

“…4 are agreement with previous X-ray diffraction and ellipsoseen to be coalesced in lines running down the image. metric studies [7,17,18]. It is also likely to affect the The spacing between these lines is of the order of 600 quality of growth of any epitaxial layer.…”

Infrared optical properties of aged porous GaAs

“…However, other species such as GaAsO 3 and GaAsO 4 may be present. 23 Note that differences in compositional and morphological nature of the solid phase compared with bulk As 2 O 3 may explain the observed shifts in center frequencies. For further information concerning different vibration modes of different phases of As 2 O 3 refer to Refs.…”