Characterization of PECVD boron carbonitride layers

Thamm, Thomas; Körner, K.-U.; Bohne, W.; Strub, Erik; Röhrich, J.; Stöckel, S.; Marx, G.

doi:10.1016/j.apsusc.2005.02.041

Cited by 27 publications

(14 citation statements)

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“…The incorporation of nitrogen in the films has been found to be important to increase the bandgap in B-C-N materials, making them more insulating. 15 The highest nitrogen content achieved without additional nitrogen source in the plasma CVD process are 28 at.% using N-TMBA 6 , 43 at.% using N-TEBA 10 , 38 at.% using TDMAB 12 , 20 at.% using triethylamineboron 7 and, 12 at.% using trimethylamineboron 13 . Studies on the deposition chemistry suggest that the B-N bonds in the precursor molecules are not the major source of nitrogen in the film, 13,14 and ammonia (NH3) or dinitrogen (N2) are typically added to the plasma to increase the N content in the films.…”

Section: Introductionmentioning

confidence: 99%

“…1 A chemical vapor deposition (CVD) process where a plasma discharge is used to activate the deposition chemistry at low thermal energy 3 is therefore favorable for BEOL processing. Several studies on plasma CVD of B-C-N films in the literature have been conducted with precursors containing B-N bonds such as: dimethylamineboron (DMAB, (H3C)HN:BH3)) 4 pyridine-borane (PB, C5H5NBH3) 5 , triazaborabicyclodecane (TBBD, BN(NHC3H2)2 ) 5 , 1,3,5trimethylborazine (N-TMBA, (CH3)3N3B3H3) 6-9 , 1,3,5triethylborazine (N-TEBA, B3H3(NCH2CH3)3) 10,11 , tris-(dimethylamino)boron (TDMAB, B(N(CH3)2)3) 12 , triethylamineboron 7 and trimethylamineboron 13,14 . The incorporation of nitrogen in the films has been found to be important to increase the bandgap in B-C-N materials, making them more insulating.…”

Section: Introductionmentioning

confidence: 99%

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Plasma CVD of B-C-N Thin Films Using Triethylboron in Argon-Nitrogen Plasma

Souqui¹,

Pališaitis²,

Högberg³

et al. 2020

Preprint

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<div> Amorphous boron-carbon-nitrogen (B-C-N) films with low density are potentially interesting as alternative low-dielectric-constant (low-κ) materials for future electronic devices. Such applications require deposition at temperatures below 300 °C, making plasma chemical vapor deposition (plasma CVD) a preferred deposition method. Plasma CVD of B-C-N films is today typically done with separate precursors for B, C and N or with precursors containing B–N bonds and an additional carbon precursor. We present an approach to plasma CVD of B-C-N films based on triethylboron (B(C2H5)3) a precursor with B-C bonds in an argon-nitrogen plasma. From quantitative analysis with Time-of-Flight Elastic Recoil Detection Analysis (ToF-ERDA), we find that the deposition process can afford B-C-N films with a B/N ratio between 0.98 and 1.3 and B/C ratios between 3.4 and 8.6 and where the films contain between 3.6 and 7.8 at. % H and 6.6 and 20 at. % of O. The films have low density, from 0.32 to 1.6 g/cm3 as determined from cross-section scanning electron micrographs and ToF-ERDA with morphologies ranging from smooth films to separated nanowalls. Scaning transmission electron microscopy shows that C and BN does not phase seperarte in the film. The static dielectric constant κ, measured by capacitance–voltage measurements, varies with the Ar concentration in the range from 3.3 to 35 for low and high Ar concentrations, respectively. We suggest that this dependence is caused by the energetic bombardment of plasma species during film deposition. </div>

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Plasma CVD of B-C-N Thin Films Using Triethylboron in Argon-Nitrogen Plasma

Souqui¹,

Pališaitis²,

Högberg³

et al. 2020

Preprint

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“…However, much less attention has been focused on boron carbonitride film synthesis from carbon containing borazine derivatives. There are few works where Ntrimethylborazine (TMB) was used to produce BC x N y films (4)(5)(6). To optimize CVD conditions the thermodynamic analysis of the corresponding multinary systems is commonly made.…”

Section: Introductionmentioning

confidence: 99%

PECVD BC_xN_y Films from Mixtures of N-trimethylborazine with Hydrogen and Ammonia: Modelling, Synthesis and Characterization

et al. 2009

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Thin boron carbonitride films were grown by plasma enhanced chemical vapour deposition using mixture of N-trimethylborazine with ammonia or hydrogen. The thermodynamic analysis of the chemical vapour deposition in B-C-N-H system was carried out for temperatures from 300 to 1300 K, a total pressure from 1.33 to 1333 Pa and a wide range of values of H2:B3N3H3(CH3)3 and NH3:B3N3H3(CH3)3 ratios. The effect of the gas phase composition and substrate temperature on the chemical composition and optical properties of the deposits was studied by ellipsometry, scanning electron microscopy, IR-spectroscopy, and optical transmittance spectrophotometry. The low temperature boron carbonitride films were demonstrated to exhibit high optical transparency in the region of 400-2000 nm (transmittance up to 93 %).

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“…The BCN films were deposited on Si(100), GaAs(100) and fused silica substrates using TEAB with and without ammonia by both LPCVD and RF-PECVD (40.68 MHz) methods. With TEAB in the direct current glow discharge plasma process (GD-PECVD) the highest carbon concentrations (48-73 at.%) in BCN films are obtained without using an additional carbon source (Thamm et al, 2005). Elastic recoil detection analysis (ERDA) measurements yield information on the layer composition regarding the concentrations of the elements boron, carbon, nitrogen, and hydrogen.…”

Section: Triethylamine-borane (Teab)mentioning

confidence: 99%

“…The influence of the plasma parameters on the properties of films has been discussed . BCN:H films on silicon substrates were deposited with two different PECVD techniques (Thamm et al, 2005(Thamm et al, , 2007. A microwave plasma with RF-bias enhancement (MW-PECVD) and a direct current glow discharge plasma system (GD-PECVD) was used with TMB and benzene as an additional carbon source.…”

Section: Trimethylborazinementioning

confidence: 99%

Compilation on Synthesis, Characterization and Properties of Silicon and Boron Carbonitride Films

Hoffmann¹,

Файнер²,

Косинова³

et al. 2011

Silicon Carbide - Materials, Processing and Applications in Electronic Devices

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Characterization of PECVD boron carbonitride layers

Cited by 27 publications

References 6 publications

Plasma CVD of B-C-N Thin Films Using Triethylboron in Argon-Nitrogen Plasma

Plasma CVD of B-C-N Thin Films Using Triethylboron in Argon-Nitrogen Plasma

PECVD BC_xN_y Films from Mixtures of N-trimethylborazine with Hydrogen and Ammonia: Modelling, Synthesis and Characterization

Compilation on Synthesis, Characterization and Properties of Silicon and Boron Carbonitride Films

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Characterization of PECVD boron carbonitride layers

Cited by 27 publications

References 6 publications

Plasma CVD of B-C-N Thin Films Using Triethylboron in Argon-Nitrogen Plasma

Plasma CVD of B-C-N Thin Films Using Triethylboron in Argon-Nitrogen Plasma

PECVD BCxNy Films from Mixtures of N-trimethylborazine with Hydrogen and Ammonia: Modelling, Synthesis and Characterization

Compilation on Synthesis, Characterization and Properties of Silicon and Boron Carbonitride Films

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PECVD BC_xN_y Films from Mixtures of N-trimethylborazine with Hydrogen and Ammonia: Modelling, Synthesis and Characterization