Characterization of Photovoltaic Cells Using n-InN/p-Si Grown by RF-MBE

Abstract

A newly reported narrow bandgap for indium nitride means that the indium gallium nitride system of alloys can be a candidate for new high efficiency solar cells covering most of the solar spectrum. In this paper, n-InN films were grown on p-Si (100) substrates. We characterize, for the first time, photovoltaic properties using n-InN/p-Si hetero-junction grown by RF-MBE.

Effect of nitridation on structure, electrical and optical properties of InN epilayers grown on sapphire by PAMBE

“…The results showed a significant improvement of the crystalline qualities and surface morphologies and enhancement of the electrical and optical properties for InN films grown after nitridation. Moreover, the energy band-gap of InN films were also determined by optical absorption and photoluminescence (PL) measurement.Extensive attention has been paid to the indium nitride (InN) epitaxial layers and devices because of its promising properties such as lowest effective mass, highest electron mobility and narrowest band gap energy (~0.7 eV) among the III-nitride semiconductors [1e3], which make it ideal for high efficiency solar cells, infrared light-emitting diodes (LEDs) and laser diodes (LDs) [4,5]. Moreover, the narrow band-gap of InN allows the group III-nitrides alloy system, such as (AlGaIn)N-based light emission devices, to extend their spectral range from near-infrared to deep ultraviolet.…”