Characterization of polymeric metal-insulator–semiconductor diodes

Grecu, S.; Bronner, Markus; Opitz, Andreas; Brütting, Wolfgang

doi:10.1016/j.synthmet.2004.08.014

Cited by 38 publications

(23 citation statements)

References 10 publications

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“…As for the steady-state case, the ac problem can be reduced to a set of three equations, obtained by introducing the harmonic developments (11)- (13) in the expression of Poisson's equation and the continuity equation for electrons and holes. The as-obtained equations are written in terms of the variables , n ψ and p .…”

Section: Basic Formalismmentioning

confidence: 99%

Numerical simulation of impedance and admittance of OLEDs

Nguyen

Schmeits

2006

Physica Status Solidi (a)

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The electrical characteristics of organic light-emitting devices are calculated for the dc and ac regimes by numerically solving the basic semiconductor equations under steady-state and small-signal conditions. For a given structure, the dc and ac electric potential and electric field, the electron and hole concentrations, as well as the different components of the current density are obtained as function of the one-dimensional spatial coordinate. This approach allows a detailed microscopic description of the dependencies of these quantities on the applied steady-state voltage V 0 and the frequency of the modulating voltage. The final output consists in the frequency-dependent complex admittance and impedance of the device, the real and imaginary parts of which are the experimentally-available data. As a typical example, we show the results for a two-layer structure where α-NPD is the hole-transporting material and Alq 3 the electron-transporting material. The anode is made of ITO and Al/LiF composes the cathode. The admittance and impedance curves, yielded by the numerical simulation as functions of the modulation frequency, are fitted by an equivalent electrical circuit, the elements of which are resistances and capacitances. The number of components depends on the structure composition and on the applied steady-state voltage. We show that each element can be associated with a particular region of the device. This allows to correlate the dependence of each feature of the admittance and impedance curves with one or several parameters describing the material system. Such an analysis can be useful for the inverse approach, where, starting from measurements of the electrical ac characteristics, the aim is to get information on the microscopic mechanisms which contribute to the electrical conduction of the device.

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Section: Basic Formalismmentioning

confidence: 99%

Numerical simulation of impedance and admittance of OLEDs

Nguyen

Schmeits

2006

Physica Status Solidi (a)

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“…37,80,84 The lack of inversion behavior, i.e. increase of capacitance, at depletion voltages is attributed to the lack of minority charge 3 The response time for minority charge carriers in silicon at room temperature is typically 0.001s − 1s.…”

Section: Metalmentioning

confidence: 99%

Stability of polarization in organic ferroelectric metal-insulator-semiconductor structures

Kalbitz

Frübing

Gerhard

et al. 2011

Applied Physics Letters

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Dielectric measurements have been carried out on all-organic metal-insulator-semiconductor structures with the ferroelectric polymer poly(vinylidenefluoride-trifluoroethylene) as the gate insulator. It is shown that the polarization states remain stable after poling with accumulation and depletion voltage. However, negative charge trapped at the semiconductor-insulator interface during the depletion cycle masks the negative shift in flatband voltage expected during the sweep to accumulation voltages.

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“…Just as in the case of the uniform channel, the impedance was assumed to be infinity at the center of the channel. Then the recurrence equation (10) was solved successively from the center (n = 0) to one electrode (n = N). Here the number of grains in the channel is set at 2N.…”

Section: Complex Impedance Of a Multi-domain Grainmentioning

confidence: 99%

“…This method has been used to get information on conductivity, dielectric behavior, relaxation characteristics, and the like [8]. With respect to OFET-related materials, the frequency response of capacitance was measured using metal-insulator-semiconductor (MIS) type structures [9][10][11]. The frequency dependent impedance or capacitance was analyzed by an equivalent circuit model assuming a series of resistors and capacitors [9,10].…”

Section: Introductionmentioning

confidence: 99%