Characterization of Porous BEOL Dielectrics for Resistive Switching

Ye, Fan; King, Sean W.; Bielefeld, J.; Orłowski, M.

doi:10.1149/07202.0035ecst

Cited by 15 publications

(19 citation statements)

References 70 publications

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“…[ 4,5 ] More recently, these porous SiOCH were also employed as solid electrolyte in conductive bridging random access memories. [ 6 ] In addition, the porosity and vapor sorption capability of these porous thin films make these materials attractive as chemically sensitive layers in nano‐electrochemical systems based on gravimetric gas sensors and miniaturized gas chromatography. [ 7,8 ] Moreover, the pore size distribution tunability of these porous organosilicates has also been used for the harvesting and detection of small molecules in liquids or for the extraction of aromatic compounds from water for on chip laboratory analyses.…”

Section: Figurementioning

confidence: 99%

Filling of Nanometric Pores with Polymer by Initiated Chemical Vapor Deposition

Van‐Straaten

Mabrouk

Veillerot

et al. 2020

Macromol. Rapid Commun.

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The integration of porous thin films using microelectronic compatible processes sometimes requires the protection of the interior of the pores during the critical integration steps. In this paper, the polymerization of neo‐pentyl methacrylate (npMA) is performed via initiated chemical vapor deposition (iCVD) on a porous organosilicate (SiOCH) and on a dense SiOCH. The characterizations by Fourier‐transform infrared spectroscopy, spectroscopic ellipsometry, and time‐of‐flight secondary ion mass spectrometry of the different stacks show that iCVD is a powerful technique to polymerize npMA in the nanometric pores and thus totally fill them with a polymer. The study of the pore filling for very short iCVD durations shows that the polymerization in the pores is complete in less than ten seconds and is uniform in depth. Then, the poly(npMA) film growth continues on top of the filled SiOCH layer. These characteristics make iCVD a straightforward and very promising alternative to other infiltration techniques in order to fill the porosity of microporous thin films.

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Section: Figurementioning

confidence: 99%

Filling of Nanometric Pores with Polymer by Initiated Chemical Vapor Deposition

Van‐Straaten

Mabrouk

Veillerot

et al. 2020

Macromol. Rapid Commun.

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“…The introduction of low-k dielectrics in industry was an effort to reduce the RC response time inherent in dielectric materials used as electrical insulators. Low-k dielectric materials such as SiCOH have been instrumental in achieving that goal and are currently used as an intermetal dielectric (IMD) insulating material, and in metal-insulator-metal (MIM) Resistive Random-Access-Memory (ReRAM) cells for nonvolatile memory, as well as in CMOS applications [1,2].…”

Section: Introductionmentioning

confidence: 99%

Magnetoresistance Recovery in the Amorphous Dielectric Material SiCOH

Williams

Lloyd

2021

PSIJ

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The use of a magnetoresistance in the characterization of transport properties in the amorphous low-k dielectric material SiCOH is demonstrated. The double occupancy of charge carriers in trap states within the dielectric material can only exist in spin singlet formation due to Pauli Exclusion. The trap-assisted negative magnetoresistance (MR) in amorphous SiCOH, driven by an applied electric field that results in an observed increase in magnitude of the current in the conduction band is due to singly occupied trap spin-mixing suppression of carriers with the application of an external magnetic field. The material MR decays with time under electrical bias and temperature stress as traps are filled by charge carriers and from space charge accumulation. The MR can be reinstated by the ionization of these traps via the conduction mechanisms of nonthermally activated tunneling and thermal ionization with the assistance of an applied coulombic potential barrier lowering electric field. In this work a direct correlation is shown between a material MR and the trapping, de-trapping, and trap avoidance of singly occupied traps in the transport of charge carriers in the amorphous low-k dielectric material SiCOH (a-SiCOH).

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“…While spongy and nanoporous materials have been extensively studied from a chemical point of view, some of the physical properties of these types of materials (e.g., piezoelectricity or resistive switching) have been much less investigated. Nonetheless, the advantages of nanoporous materials in engineering applications like resistive random access memories (RRAM) or strain actuators have become obvious in recent years [2][3][4]. Hence, it is important that the physical properties of fully dense materials are also maintained or even improved when the microstructure is made porous.…”

Section: Introductionmentioning

confidence: 99%