Characterization of self-heating in cryogenic high electron mobility transistors using Schottky thermometry

Abstract

Cryogenic low noise amplifiers based on high electron mobility transistors (HEMTs) are widely used in applications such as radio astronomy, deep space communications, and quantum computing, and the physical mechanisms governing the microwave noise figure are therefore of practical interest. In particular, the contribution of thermal noise from the gate at cryogenic temperatures remains unclear owing to a lack of experimental measurements of thermal resistance under these conditions. Here, we report measurements of gate junction temperature and thermal resistance in a HEMT at cryogenic and room temperatures using a Schottky thermometry method. At temperatures ∼ 20 K, we observe a nonlinear trend of thermal resistance versus power that is consistent with heat dissipation by phonon radiation. Based on this finding, we consider heat transport by phonon radiation at the low-noise bias and liquid helium temperatures and estimate that the thermal noise from the gate is several times larger than previously assumed owing to self-heating. We conclude that without improvements in thermal management, self-heating results in a practical lower limit for microwave noise figure of HEMTs at cryogenic temperatures.

Luminescence Thermometry Beyond the Biological Realm

“…While luminescence thermometry has both longstanding ties to and continued promise for biological applications, this applications-driven review has highlighted an extensive body work from the last several decades that demonstrates how luminescence thermometry can address challenges in many other areas. Identifying micro to nanoscale hotspots in electronics, an early device-oriented application of luminescence thermometry, remains a frontier opportunity, with increasingly important technologies such as wide bandgap devices presenting a new set of thermal challenges and metrology needs. , Devices for quantum computing applications, many of which operate well below room temperature, similarly benefit from thermal characterization and are a prime example of applications that could take advantage of the wide operating temperature range of luminescent thermometers. Various applications in catalysis have appeared in recent years, indicating opportunities to optimize reactor conditions, delineate photothermal and photochemical mechanisms, and characterize the temperature rise resulting from heat generated by exothermic reactions.…”

Self-heating of cryogenic high-electron-mobility transistor amplifiers and the limits of microwave noise performance

“…We compare these results with an equivalent circuit radiation model of the HEMT structure developed in Ref. [29]. The explicit functional form for the gate temperature derived from this model is:…”

“…[28], for example). Recent numerical and experimental studies have attributed this plateau to heating of the gate caused by power dissipated in the active channel, referred to as self-heating [27,29]. In more detail, optimal low-noise performance at cryogenic temperatures requires power dissipation on the order of milliwatts.…”

Experimental Study of Self-Heating Effect in InGaAs HEMTs for Quantum Technologies Down to 10K

“…Several studies have already been carried out on selfheating, more thoroughly for Silicon (Si) devices and with an increasing interest for III-V. Particularly, Choi et al have characterized InGaAs-based HEMTs down to 20 K [3], while Ardizzi et al have studied GaAs HEMTs down to liquid helium temperatures analyzing the noise temperature [4]. This work will instead study InGaAs-based HEMTs down to 10 K, showing their capacity to dissipate heat and stay in line with their ambient temperature, benchmarking them moreover with well-documented Si CMOS.…”