Characterization of silicon-doped InP grown by solid-source molecular beam epitaxy using a valved phosphorus cracker cell

Abstract. In the present paper, the comprehensive fully self-consistent optical-electrical-thermal-recombination model is used to determine the optimal structure of the possible GaInNAs quantum-well (QW) tunnel-junction (TJ) vertical-cavity surface-emitting lasers (VCSELs) with single-fundamental-mode operation at 2.33 µm wavelength suited for carbon monoxide sensing applications. From among various considered structures, the diode laser with 4-µm TJ and two 6-nm Ga0.15In0.85N0.015As0.985/Ga0.327In0.673As0.71P0.29 QWs has the lowest threshold current and seems to be optimal for the above applications. Higher threshold currents are obtained for Ga0.15In0.85N0.015As0.985/Al0.138-Ga0.332In0.530As QW structures but the latter can be grown in reactors without P source which are used for fabrication of GaAs-based devices. Both the modelled VCSELs offer a very promising room temperature continuous wave performance and may represent an alternative choice to GaSb-based lasers.

show abstract

“…Using the data of [25,[32][33][34][35][36][37][38][39], we calculate electron mobility in Si-and Zn-doped InP from the following relations:…”

Section: Materials Parameters Used In the Electrical Modelmentioning

confidence: 99%

GaInNAs quantum-well vertical-cavity surface-emitting lasers emitting at 2.33 μm

Piskorski¹,

Sarzała²

2013

Bulletin of the Polish Academy of Sciences: Technical Sciences

View full text Add to dashboard Cite

show abstract

“…As a result, the fundamental transition is blue shifted compared to the transition in the undoped semiconductor. This is known as the Burstein-Moss effect, 13,14 in the literature, and has been carefully studied in several III-V semiconductors, including GaAs, 2,15 InP, 16 InGaAs, 17 and InGaP. 18 Additionally, there are two other effects that tend to cause the band gap to red shift due to doping in a semiconductor.…”

Section: Fundamental Energy Gap (E 0 )mentioning

confidence: 99%

Optical properties of Cl-doped ZnSe epilayers grown on GaAs substrates

Karrer

Peiris

VanMil

et al. 2005

Journal of Elec Materi

View full text Add to dashboard Cite

We have determined the optical properties of a series of Cl-doped ZnSe epilayers grown on GaAs substrates using ellipsometry and prism coupling. Initially, the carrier concentrations were determined using Hall measurements for samples between 6.30 ϫ 10 16 cm Ϫ3 and 9.50 ϫ 10 18 cm Ϫ3 . Using a variable angle spectroscopic ellipsometer in the energy range between 0.7 eV and 6.5 eV, we then obtained experimental spectra for each of the samples. By incorporating a three-layer model to simulate the experimental data, we determined the complex dielectric functions for these Cl-doped ZnSe epilayers. In order to facilitate this modeling procedure, we have complemented the ellipsometric results with prism coupling experiments that measured the film thickness and the index of refraction (at discrete wavelengths) very precisely. For the fundamental band gap, we observe a blue shift with respect to the doping concentration, which can be explained by the Burstein-Moss effect. In addition, we have determined the critical point parameters related to these specimens by fitting the second derivatives of both the real and the imaginary parts of the dielectric functions. Similar to several doped III-V semiconductors reported thus far, we find that in Cl-doped ZnSe epilayers, both E 1 and E 1 ϩ ∆ 1 red shift, as well as a broadening with respect to the doping concentration.

show abstract

References to Tables

Nývlt

Ulrich

1995

Admixtures in Crystallization

View full text Add to dashboard Cite

Characterization of silicon-doped InP grown by solid-source molecular beam epitaxy using a valved phosphorus cracker cell

Cited by 11 publications

References 22 publications

GaInNAs quantum-well vertical-cavity surface-emitting lasers emitting at 2.33 μm

GaInNAs quantum-well vertical-cavity surface-emitting lasers emitting at 2.33 μm

Optical properties of Cl-doped ZnSe epilayers grown on GaAs substrates

References to Tables

Contact Info

Product

Resources

About