Characterization of Single-Event Transients in Schmitt Trigger Inverter Chains Operating at Subthreshold Voltages

Gadlage, Matthew J.; Ahlbin, J. R.; Gadfort, Peter; Roach, A.; Stansberry, Scott D.

doi:10.1109/tns.2016.2629448

Cited by 9 publications

(5 citation statements)

References 16 publications

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“…As a result, the difference due to different LETs between Au and Ca experiments in Fig. 4(a) is getting less pronounced at lower voltages, which was also seen in simulations reported in [17], as well as in measurements in [5].…”

Section: Resultssupporting

confidence: 68%

“…As the supply voltage is decreased, observed SET widths span several orders This work is licensed under a Creative Commons Attribution 3.0 License. For more information, see http://creativecommons.org/licenses/by/3.0/ of magnitude, making it difficult to perform measurements across the whole range of supply voltages with a single circuit [5], [13], [14]. As our approach allows measuring SET widths ranging many orders of magnitude, we are able to investigate SETs from subthreshold to nominal supply voltage.…”

Section: Related Workmentioning

confidence: 99%

“…Bringing sensitive nodes closer together has been shown to increase SEU rate in conventional radiation-hardened circuits, such as dual-interlocked cell (DICE) flip-flop, due to a charge sharing effect [1], [2]. Decreasing the supply voltage has also been reported to negatively affect the radiation hardness of a circuit [3]- [5]. Even small fluctuations below the nominal supply voltage were shown to cause considerable increase in the SET pulse widths, and consequently in the SEU rate [6].…”

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confidence: 99%

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Experimental Investigation of the Joint Influence of Reduced Supply Voltage and Charge Sharing on Single-Event Transient Waveforms in 65-nm Triple-Well CMOS

Mitrovic

Hofbauer

Voss

et al. 2018

IEEE Trans. Nucl. Sci.

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Full waveforms of single-event transients (SETs) in inverter chains were measured under focused heavy-ion microbeam irradiation. Inverter chains of varying spacings were irradiated with 48 Ca and 197 Au ions. The influence of changing the supply voltage from subthreshold to nominal level on SET forming and propagation was investigated, and the role of charge sharing is discussed. Key factors that influence SET widths and cross sections are identified across the applied range of supply voltages. A simple method is presented for estimating average SET widths at decreased supply voltages, and is based on the SET width measurements at nominal supply voltage, transistorlevel simulations, and extracted circuit parameters. The proposed method matches well with the measured data.

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Section: Resultssupporting

confidence: 68%

Section: Related Workmentioning

confidence: 99%

mentioning

confidence: 99%

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Experimental Investigation of the Joint Influence of Reduced Supply Voltage and Charge Sharing on Single-Event Transient Waveforms in 65-nm Triple-Well CMOS

Mitrovic

Hofbauer

Voss

et al. 2018

IEEE Trans. Nucl. Sci.

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“…The total quantity of ionization dose depends on radiation intensity and amount. These effects cause some major impacts on semiconductor devices i.e threshold voltage variation due to holes trapped in SiO 2 and Si/SiO 2 surface change [2].…”

Section: A Total Ionization Dose Effectsmentioning

confidence: 99%

“…Several types of hard errors which are destructive can appear, Single Event Latch up (SEL) are hard errors and causes a high operating current than device maximum specified current and can only remove by power reset. Other hard errors may cause burnout of power MOSFETS, Gate Rupture, frozen bits, and noise in CCDs [1], [2]. Single event effects can be categorized into three effects (in order of permanency): a) Single Event Upset (soft error) b) Single Event Latch up (soft or hard error) c) Single Event Burnout (hard failure)…”

Section: B Single Event Effectsmentioning

confidence: 99%

Circuit Techniques using Substrate Bias for Design of Radiation Hardened Voltage Controlled Oscillator

Jain¹

2017

IJCDS

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Rradiation effect causes some major impact on CMOS devices, such as the switch point, change output rail voltage, and the increased leakage current. If radiation is high, proper inverter operation fails. We suggest a scheme to maintain the output voltage by making V gs negative when the NMOS cuts off. This paper shows the structural CMOS with and without radiation and variation of electrical properties of device under various radiations doses and proposes a modified CMOS circuit which mitigates radiation effects by improving switch point in I-V characteristic. In order to redesign the circuit for radiation resistance; the above radiation hardened inverter circuit is implemented in each of Voltage Controlled Oscillator (VCO) gates using Radiation Hardened By Design (RDBD) technique.

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Soft error hardening enhancement analysis of NBTI tolerant Schmitt trigger circuit

Shah

Rossi

Sharma

et al. 2020

Microelectronics Reliability

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Characterization of Single-Event Transients in Schmitt Trigger Inverter Chains Operating at Subthreshold Voltages

Cited by 9 publications

References 16 publications

Experimental Investigation of the Joint Influence of Reduced Supply Voltage and Charge Sharing on Single-Event Transient Waveforms in 65-nm Triple-Well CMOS

Experimental Investigation of the Joint Influence of Reduced Supply Voltage and Charge Sharing on Single-Event Transient Waveforms in 65-nm Triple-Well CMOS

Circuit Techniques using Substrate Bias for Design of Radiation Hardened Voltage Controlled Oscillator

Soft error hardening enhancement analysis of NBTI tolerant Schmitt trigger circuit

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