2015 XVIII AISEM Annual Conference 2015
DOI: 10.1109/aisem.2015.7066818
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Characterization of Single-Photon Avalanche Diode arrays in 150nm CMOS technology

Abstract: In this paper, a summary of characterization results from a SPAD test chip is reported. The chip includes test arrays based on two different SPAD structures, having p+/n-well and p-well/n-iso active area. Devices with different shapes and sizes as well as arrays dedicated to cross-talk extraction are present. Measurement results show that SPADs of the second type have a slightly lower Dark Count Rate. The peak Photon Detection Probability (PDP) is larger than 20% at 3V excess bias voltage for both structures. … Show more

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Cited by 7 publications
(5 citation statements)
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“…The aim of this normalization is to exclude absolute values of quantities that are process and material dependent, such as thermal generation inside the depletion regions that cause dark count rate. Furthermore, dark count rates of modern SPAD arrays vary a lot, from 100 Hz (Leitner et al 2013) to a few hundred kHz (Xu et al 2008) and 1 MHz (Rosado and Hidalgo 2015), and it is difficult to accurately calibrate the thermal generation of carriers in the simulator. Therefore, the results show indirect optical crosstalk reduction relative to the 50Àlm-thick array without the crosstalk-reduction layer.…”
Section: Resultsmentioning
confidence: 99%
“…The aim of this normalization is to exclude absolute values of quantities that are process and material dependent, such as thermal generation inside the depletion regions that cause dark count rate. Furthermore, dark count rates of modern SPAD arrays vary a lot, from 100 Hz (Leitner et al 2013) to a few hundred kHz (Xu et al 2008) and 1 MHz (Rosado and Hidalgo 2015), and it is difficult to accurately calibrate the thermal generation of carriers in the simulator. Therefore, the results show indirect optical crosstalk reduction relative to the 50Àlm-thick array without the crosstalk-reduction layer.…”
Section: Resultsmentioning
confidence: 99%
“…As mentioned in the Introduction, there have been studies on the crosstalk characterization of SPADs, e.g., the important contribution of indirect optical paths [13,14], the dependence of CMOS SPAD optical crosstalk on excess voltage, the distance between devices and die thickness [18], and the effect of the guard-ring width and p-n junction (multiplication region) depth on the crosstalk probability [25,26]. However, few of these reports address the timing correlation of crosstalk events in CMOS arrays.…”
Section: Discussionmentioning
confidence: 99%
“…The most obvious solution for minimizing the crosstalk is increasing the distance between devices, which significantly reduces the fill factor [25,26]. Another proposed solution for the crosstalk problem is the fabrication of deep isolating trenches (coated with metal [9, 27] or thick heavily doped deep diffusion regions [13,14]) to avoid direct optical and electrical crosstalk (although this solution is still not prone to indirect optical paths).…”
Section: Discussionmentioning
confidence: 99%
“…Each measurement cycle with our hyperspectral single photon lidar produces a data frame that contains 32 × 32 delay counter values (in this study, only 30 spectral channels are used among the 32 channels available) representing the time-of-flight time differences between the supercontinuum laser triggering time at and the return pulse detection time at as: where i and j denote the pixel indices in the intensity and wavelength directions, respectively, and k denotes the location of the frame in a sequence of measurements. The pixels are triggered either by photons originating from the target return pulse or ambient illumination source, or alternatively by SPAD array intrinsic noise, such as dark current noise [ 54 ], afterpulsing [ 65 ], or crosstalk [ 66 , 67 , 68 , 69 ]. The pixels in the SPAD array that have not triggered during the measurement cycle are denoted by value .…”
Section: Methodsmentioning
confidence: 99%