Characterization of SiO2GaAs interface structures using spectroscopic ellipsometry

Watanabe, Yuto; Saitoh, Tadashi; Miyazaki, Masaru; Suzuki, Kazuhiko

doi:10.1016/0040-6090(93)90098-a

Cited by 13 publications

(2 citation statements)

References 7 publications

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“…Electrical characteristics of GaAs MOS capacitors indicate that surface treatment using ͑NH 4 ͒ 2 S prior to atomic layer deposition of Al 2 O 3 is more effective than surface hydroxylation using NH 4 OH. It has been previously shown that using ammonia solution, the GaAs surface will be rich in hydroxyl ͑OH͒ group, formed as Ga͑OH͒ x and GaO x , 15,16 whereas ammonium sulfide tends to preclude the regrowth of native oxides. In addition, the Ga 2p 3/2 x-ray photodetection spectroscopy ͑XPS͒ spectrum of the sulfide-treated sample implies the presence of thinner GaO x layer at the Al 2 O 3 / GaAs interface compared to the hydroxylated sample.…”

Section: Impact Of Surface Chemical Treatment On Capacitance-voltage mentioning

confidence: 99%

Impact of surface chemical treatment on capacitance-voltage characteristics of GaAs metal-oxide-semiconductor capacitors with Al2O3 gate dielectric

Shahrjerdi

Tutuc

Banerjee

2007

Applied Physics Letters

123

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The authors examine the impact of two different chemical surface treatment methods on capacitance-voltage characteristics of GaAs metal-oxide-semiconductor (MOS) capacitors using NH4OH and (NH4)2S prior to atomic layer deposition (ALD) of Al2O3. In both cases, x-ray photoelectron spectroscopy data confirm the removal of As2O3∕As2O6 upon Al2O3 deposition. However, Ga–O bonds appear to incorporate in the final gate stack at the Al2O3∕GaAs interface. MOS capacitors exhibit a steep transition from accumulation to depletion as well as very low leakage current density indicating high quality of ALD-Al2O3. The midgap interface trap density was evaluated to be (∼3–5)×1011∕cm2eV using the Terman method. In addition, quasistatic capacitance-voltage (C-V) measurement confirms the formation of true inversion layer in GaAs using both chemical treatment protocols. However, sulfur-passivated GaAs demonstrates better frequency dispersion behavior and slightly smaller capacitance equivalent thickness than hydroxylated GaAs. A statistical study substantiates the reproducibility of these results.

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Section: Impact Of Surface Chemical Treatment On Capacitance-voltage mentioning

confidence: 99%

Impact of surface chemical treatment on capacitance-voltage characteristics of GaAs metal-oxide-semiconductor capacitors with Al2O3 gate dielectric

Shahrjerdi

Tutuc

Banerjee

2007

Applied Physics Letters

123

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“…This material has been grown by various methods including thermal oxidation, chemical vapor phase deposition, plasma-enhanced chemical vapor phase deposition, and so on. 1,2 Recently, Nagayama et al 3 have reported that SiO 2 thin films could be produced by a new chemical method of liquid phase deposition (LPD). It is superior to other deposition methods in terms of the following characteristics: low processing temperature, simple equipment, high growth rate and low cost, and thus has attracted plenty of theoretical and industrial interest.…”

Section: Introductionmentioning

confidence: 99%

Chemical liquid phase deposition of thin aluminum oxide films

Sun

2004

Chin. J. Chem.

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FilmsSUN, Jie "'(bJ\@) SUN, Thin aluminum oxide films were deposited by a new and simple physicochemical method called chemical liquid phase deposition (CLD) on semiconductor materials. Aluminum sulfate with crystallized water and sodium bicarbonate were used as precursors for film growth, and the control of the system's pH value played an important role in this experiment. The growth rate is 12 nm/h with the deposition at [A12(SO&]=O.O837 mol-L-', [NaHC03]= 0.214 mol-L-', 15 %. Post-growth annealing not only densifies and purifies the films, but results in film crystallization as well. Excellent quality of A1203 films in this work is supported by electron dispersion spectroscopy.Fourier transform infrared spectrum, X-ray diffraction spectrum and scanning electron microscopy photograph. KeywordsFourier transform infrared spectrum, X-ray diffraction, scanning electron microscopy aluminum oxide, chemical liquid phase deposition. pH value, electron dispersion spectroscopy,

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Variation of TiO2/SiO2 mixed layers induced by Xe+ ion irradiation with energies from 100 to 250 keV

Phuc

Kulik

Khiem

et al. 2022

Materials Science and Engineering: B

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Characterization of SiO2GaAs interface structures using spectroscopic ellipsometry

Cited by 13 publications

References 7 publications

Impact of surface chemical treatment on capacitance-voltage characteristics of GaAs metal-oxide-semiconductor capacitors with Al2O3 gate dielectric

Impact of surface chemical treatment on capacitance-voltage characteristics of GaAs metal-oxide-semiconductor capacitors with Al2O3 gate dielectric

Chemical liquid phase deposition of thin aluminum oxide films

Variation of TiO2/SiO2 mixed layers induced by Xe+ ion irradiation with energies from 100 to 250 keV

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