Characterization of Spin Coated Nondoped and In-Doped ZnO Films Using Novel Precursor Solution

Inaba, Kazuaki; Takemoto, Yujin; Toyota, Kouji; Haga, Kazuo; Tokudome, Kouichi; Shinmiya, Masato; Kamiya, Naomi; Oshima, Minoru; Yoshino, Kenji

doi:10.4028/www.scientific.net/msf.725.277

Cited by 2 publications

(3 citation statements)

References 18 publications

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“…In this study, a novel precursor having a Zn-O structure was synthesized for GZO lm deposition by the reaction of diethylzinc and water in some ether solvents. 39 weight ratio of DEZ to TEG was xed to be 1 to 5: this results in 2 wt% Ga content in the nal lm. The substrate temperature and deposition duration were xed at 100 C and 24 min, respectively.…”

Section: Methodsmentioning

confidence: 99%

Fabrication of an efficient electrodeposited Cu₂ZnSnS₄-based solar cells with more than 6% conversion efficiency using a sprayed Ga-doped ZnO window layer

et al. 2014

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Section: Methodsmentioning

confidence: 99%

Fabrication of an efficient electrodeposited Cu₂ZnSnS₄-based solar cells with more than 6% conversion efficiency using a sprayed Ga-doped ZnO window layer

et al. 2014

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“…To incorporate oxygen inside the ZnO film easily, we have developed the novel precursor solution made of DEZ and water, and a ZnO film was successfully grown by spin-coating method. 17 A novel precursor for ZnO film deposition with ZnO structure was synthesized by the reaction of DEZ in some solvents. A perovskite-based solar cell is fabricated by using their ZnO with a novel precursor solution in this work.…”

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“…17 All processes for sample preparation were performed under inert gas (e.g., nitrogen). The hydrolysis reaction was conducted by adding water to DEZ in a solvent under cooling conditions in order to remove the reaction heat and avoid side reactions.…”

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Low-temperature Growth of Porous and Dense ZnO Films for Perovskite Solar Cells on ITO Substrate

et al. 2016

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A novel precursor with zinc oxide (ZnO) structure was synthesized for ZnO film deposition using diethylzinc in some solvents. Non-doped ZnO films on a glass substrate were successfully grown by conventional spin coating using the nondoped novel precursor solution. Highly porous and dense ZnO thin films were obtained at 150°C using the novel precursor with chlorobenzene and toluene, respectively.Zinc oxide (ZnO) is a semiconductor having a hexagonal structure and a large band gap of 3.4 eV at room temperature (RT). Because of its attractive properties, ZnO has been investigated for use in multiple applications such as gas are attractive for ZnO thin film growth because of the avoidance of plasma-generated surface damage. An additional advantage of these methods is that the use of high vacuum is not required, leading to very low equipment cost. Furthermore, low-temperature ZnO growth processes are important for compatibility with the fabrication processes of photovoltaic devices based on advanced thin film materials such as CuInGaSe 2 . 10 Recently, photovoltaic devices based on hybrid metalorganic perovskite materials have attracted considerable attention as leading candidates for use in next-generation solar cells.11,12 Au/spiro-OMeTAD/CH 3 NH 3 PbI 3 / porous TiO 2 /dense TiO 2 /FTO/glass structure is generally used in perovskite-based solar cells.13 FTO/glass is used because high temperatures above 400°C are required for fabricating porous TiO 2 .11,12 Therefore, low-temperature growth processes for fabricating porous TiO 2 or substituting porous TiO 2 by a different material are necessary for developing flexible perovskite-based solar cells.However, it is known that because of the low thermal energy, low-temperature growth in non-vacuum processes is challenging and there have been only few reports on low-temperature growth at less than 200°C under non-vacuum conditions. Nishinaka et al. reported the low-temperature growth of ZnO at 150°C by spin coating using zinc acetylacetonate in 2-butanol.14 This resulted in a sample with a smooth surface morphology and porous structure arising from the aggregation of ZnO grains.In our previous work, 15 a non-doped ZnO film was successfully grown on a poly(ethylene terephthalate) substrate by conventional atmospheric spray pyrolysis at low temperatures using a diethylzinc (DEZ)-based solution. DEZ is a well-known metalorganic chemical vapor deposition (MOCVD) precursor for ZnO films with a boiling point of 118°C at atmospheric pressure. The samples exhibited an optical transmittance of more than 80% on an average, a rough surface, and a predominately a axis orientation as determined by optical transmittance, scanning electron microscopy (SEM), and X-ray diffraction (XRD) measurements, respectively. To expand the possible options for ZnO film deposition, we have also fabricated ZnO films at low temperatures using a spin-coating method with a simple DEZbased solution that was previously used for spray pyrolysis. 16In our previously reported DEZ solution, some ether compou...

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Characterization of Spin Coated Nondoped and In-Doped ZnO Films Using Novel Precursor Solution

Cited by 2 publications

References 18 publications

Fabrication of an efficient electrodeposited Cu₂ZnSnS₄-based solar cells with more than 6% conversion efficiency using a sprayed Ga-doped ZnO window layer

Fabrication of an efficient electrodeposited Cu₂ZnSnS₄-based solar cells with more than 6% conversion efficiency using a sprayed Ga-doped ZnO window layer

Low-temperature Growth of Porous and Dense ZnO Films for Perovskite Solar Cells on ITO Substrate

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Characterization of Spin Coated Nondoped and In-Doped ZnO Films Using Novel Precursor Solution

Cited by 2 publications

References 18 publications

Fabrication of an efficient electrodeposited Cu2ZnSnS4-based solar cells with more than 6% conversion efficiency using a sprayed Ga-doped ZnO window layer

Fabrication of an efficient electrodeposited Cu2ZnSnS4-based solar cells with more than 6% conversion efficiency using a sprayed Ga-doped ZnO window layer

Low-temperature Growth of Porous and Dense ZnO Films for Perovskite Solar Cells on ITO Substrate

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Fabrication of an efficient electrodeposited Cu₂ZnSnS₄-based solar cells with more than 6% conversion efficiency using a sprayed Ga-doped ZnO window layer

Fabrication of an efficient electrodeposited Cu₂ZnSnS₄-based solar cells with more than 6% conversion efficiency using a sprayed Ga-doped ZnO window layer