Characterization of Sputter Deposited PbTe on Si (111) for Optoelectronic Applications

Abstract

IV-VI compound semiconductors are of interest due to their potential application as thermoelectric material, infrared detectors and semiconductor lasers. The use of PbTe based semiconductors is usually in the middle and far infrared region. Magnetron sputtering of PbTe thin films from a single target on Si (111) was performed under various conditions. Characterization of the films shows that PbTe films on Si (111) substrate are suitable for preparation of infrared (IR) detectors. By heat treatment novel IR detectors can be developed in the electron absorption region of 4 – 10 μm.

The effect of substrate bias voltage on PbTe films deposited by magnetron sputtering

“…Much attention has been paid to PbTe due to its potential application as a thermoelectric material, an infrared detector and a semiconductor laser in the 3-30 m [1]. For its use in any of the above applications, PbTe films are desirable.…”