Characterization of the carriers' multiplication in Si and SiC power devices by soft-gamma irradiation under cryostatic conditions

Pocaterra, Marco; Ciappa, Mauro

doi:10.1016/j.microrel.2022.114741

Cited by 4 publications

(3 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In [18], it is shown that the carriers' multiplication coefficient as a function of the V DS /V aval is almost constant with the temperature for both Si and SiC MOSFETs. This is explained by the Miller's empirical formula, which gives the relation between multiplication coefficient and the avalanche voltage.…”

Section: Discussionmentioning

confidence: 99%

“…With the known temperature dependence of the avalanche voltage V aval (T), the FIT versus V DS /V aval (T) curves could explain FIT temperature dependence in SiC MOSFETs as proposed in [16,18]. This analysis applied to the FIT data would be cumbersome because the values of the avalanche voltage exhibit a large spread as well as their temperature drift.…”

Section: Discussionmentioning

confidence: 99%

“…The correlation between the FIT of SiC power devices assessed by neutron irradiation and the multiplication factor measured by radioactive sources was demonstrated in [17]. The same authors characterized the multiplication factor of Si and SiC power devices at liquid nitrogen and ambient temperatures by using soft-gamma radioactive sources [18]. They observed that the curves of the multiplication coefficient versus the ratio V DS /V aval at liquid nitrogen and ambient temperatures are almost superimposed.…”

Section: Introductionmentioning

confidence: 94%

See 2 more Smart Citations

Impact of Temperature on Neutron Irradiation Failure-in-Time of Silicon and Silicon Carbide Power MOSFETs

et al. 2023

View full text Add to dashboard Cite

Accelerated neutron tests on silicon (Si) and silicon carbide (SiC) power MOSFETs at different temperatures and drain bias voltages were performed at the ChipIr facility (Didcot, UK). A super-junction silicon MOSFET and planar SiC MOSFETs with different technologies made by STMicroelectronics were used. Different test methods were employed to investigate the effects of temperature on neutron susceptibility in power MOSFETs. The destructive tests showed that all investigated devices failed via a single-event burnout (SEB) mechanism. Non-destructive tests conducted by using the power MOSFET as a neutron detector allowed measuring the temperature trend of the deposited charge due to neutron interactions. The results of the destructive tests, in the −50 °C–180 °C temperature range, revealed the lack of a common trend concerning the FIT temperature dependence among the investigated SiC power MOSFETs. Moreover, for some test vehicles, the FIT-temperature curves were dependent on the bias condition. The temperature dependence of the FIT values, observed in some SiC devices, is weaker with respect to that measured in the Si MOSFET. The results of the non-destructive tests showed a good correlation between the temperature trends of the deposited charge with those of FIT data, for both Si and SiC devices.

show abstract

Section: Discussionmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%