Characterization of the electron mobility in the inverted &amp;amp;lt;100&amp;amp;gt; Si surface

Sabnis, Anant G.; Clemens, J.T.

doi:10.1109/iedm.1979.189528

Cited by 211 publications

(91 citation statements)

References 1 publication

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“…Recently, the inversion-layer mobility has come to be explained in terms of the scattering theory for the 2D carrier gas [2][3][4][5][6], even at room temperature. Figure 2 shows the experimental relationship between electron mobility on (100) and the Figure 2, has been verified experimentally over a wide range ofthe substrate impurity concentration for n-and pMOSFETs [7][8][9][10][11] fabricated on several surface orientations [12]. The [15] and B [16]) is higher than that of the experimental one and the calculated temperature dependence is weaker than the experimental one.…”

Section: Low Field Mobilitymentioning

confidence: 92%

Two‐dimensional Carrier Transport in Si MOSFETs

Takagi

1998

VLSI Design

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The importance of 2-dimensional (2D) features of carriers in Si MOSFETs on the device performance is re-examined experimentally and theoretically from the viewpoint of lowfield mobility, velocity in high tangential fields and the inversion-layer capacitance. It is confirmed that low-field mobility and inversion-layer capacitance can be understood well in terms of the 2D subbands and the 2D carrier transport. In order to obtain fullyquantitative understanding of low-field mobility, however, it is still necessary to more accurately determine the amount of the scattering parameters in the inversion layer. On the other hand, saturation velocity is considered to be less influenced by the 2D quantization, while it is found experimentally that saturation velocity is slightly dependent on surface carrier concentration.According to the knowledge of 2-dimensional carrier transport in Si inversion layer, an effective way to have higher current drive is to increase the occupancy of the 2-fold valleys, which have lower conductivity mass, on a (100) surface. From this viewpoint, two device structures, strained Si MOSFETs and SOI MOSFETs with ultra-thin SOI films, are introduced and the behavior of low-field mobility is analyzed through the calculations of the subband structures and phonon-limited mobility.

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Section: Low Field Mobilitymentioning

confidence: 92%

Two‐dimensional Carrier Transport in Si MOSFETs

Takagi

1998

VLSI Design

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“…Electron mobility has very complex temperature dependence, defined by the interplay of the four scattering parameters: phonon scattering ph, surface roughness scattering sr, bulk charge Columbic scattering cb, and interface charge Columbic scattering int (Chain et al, 1997). Each of these scattering parameters is related to the temperature of the composite (ZnO/SiO2) and semiconductive material and the effective transverse electric field, which is approximated (Sabnis and Clemens, 1979). The electric field E for continuous charge distribution along the can be estimated by using Coulomb's Law (Eq.…”

Section: Phosphorus Dopped Siliconmentioning

confidence: 99%

Physics of ZnO/SiO2 electrolyte semi-conductive thermal electric generator

Rahman¹,

Aung²,

Saifullah³

et al. 2017

Int. j. adv. appl. sci

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Thermoelectric generator generates electrical power from heat based on the temperature gradient. The total energy (fuel) supplied to the engine, approximately 30 to 40% is converted into useful mechanical work, whereas the remaining is expelled to the environment as heat through exhaust gases and cooling systems, resulting in serious greenhouse gas (GHG) emission. The technologies reported on waste heat recovery from exhaust gas of internal combustion engines (ICE) are thermo electric generators (TEG) with finned type, Rankine cycle (RC) and Turbocharger by the different researchers. The deficiency and acclimatization of existing TEG emphasis this study to develop a nanomaterial zinc oxide (ZnO)/Silicon di-oxide (SiO2) electrolyte based semi-conductive thermal electric generator (TEG) to generate electricity from the IC engine exhaust heat. This technology produces electricity from the exhaust heat due to the thermal motion, carrier drift and carrier diffusion. The ZnO/SiO2 simulated result based on the 60% of exhaust heat of IC engine shows that its electrical energy generation is about 80% more than conventional TEG for the exhaust temperature of 500C due to its higher thermal and electric conductivity and higher surface area both in radially and longitudinally. The ZnO/SiO2 electrolyte semiconducive technology develops 524W to 1600W at engine speed 1000 to 5000 rpm, which could contribute to reduce the 10-12% of engine total fuel consumption and improve emission level by 20%.

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“…As suggested by Sabins and Clemens [64], the reduction in the effective surface mobility may be expressed as a unique function of the effective vert ical fie ld ζ ┴ . The most famous model of the surface mobility in MOSFET devices has been, for long time, the Yamaguchi model [65]:…”

Section: Carrier Drift Mobility In the Bulkmentioning

confidence: 99%

Yet Another Hydrodynamic Model with Correlated Parameters for Silicon Devices

El-Saba¹

2013

MSSE

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In this paper we present a complete hydrodynamic model (HDM) describing the transport of charge carriers in semiconductor devices with arbitrary band structure. The model is appended with advanced physical models fo r almost all the physical parameters of interest in modern Si Devices. These parameters are inter-related v ia the carrier energy relaxation time. An improved analytical model of the carrier heat flu x, on the basis of a fourth mo ment of the Bolt zmann transport equation (BTE), is also presented. In order to resolve the heat evacuation problems in SOI and power devices, the model is coupled with a lattice heat conservation equation. The transport of hot carriers is simu lated, according to the proposed HDM and the results are compared with the conventional data obtained using the drift-diffusion model (DDM) and MC simu lation. We show from the HD simu lation, the effect of the energy relaxat ion time value on the hot carrier transport in general and the breakdown voltage in particu lar, of both MOSFETs and bipolar devices.

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Characterization of the electron mobility in the inverted &lt;100&gt; Si surface

Cited by 211 publications

References 1 publication

Two‐dimensional Carrier Transport in Si MOSFETs

Two‐dimensional Carrier Transport in Si MOSFETs

Physics of ZnO/SiO2 electrolyte semi-conductive thermal electric generator

Yet Another Hydrodynamic Model with Correlated Parameters for Silicon Devices

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