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By taking advantage of a stability criterion established recently, the critical temperature Tc is reckoned with help of the microscopic parameters, characterising the normal and superconducting electrons, namely the independent-electron band structure and a repulsive two-electron force. The emphasis is laid on the sharp Tc dependence upon electron concentration and inter-electron coupling, which might offer a practical route toward higher Tc values and help to understand why high-Tc compounds exhibit such remarkable properties.

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In this paper we present a complete hydrodynamic model (HDM) describing the transport of charge carriers in semiconductor devices with arbitrary band structure. The model is appended with advanced physical models fo r almost all the physical parameters of interest in modern Si Devices. These parameters are inter-related v ia the carrier energy relaxation time. An improved analytical model of the carrier heat flu x, on the basis of a fourth mo ment of the Bolt zmann transport equation (BTE), is also presented. In order to resolve the heat evacuation problems in SOI and power devices, the model is coupled with a lattice heat conservation equation. The transport of hot carriers is simu lated, according to the proposed HDM and the results are compared with the conventional data obtained using the drift-diffusion model (DDM) and MC simu lation. We show from the HD simu lation, the effect of the energy relaxat ion time value on the hot carrier transport in general and the breakdown voltage in particu lar, of both MOSFETs and bipolar devices.